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For the vast majority of ellipsometric measurements, the application of planar substrates is mandatory and requires a proper sample alignment prior to the measurement. Here, the authors present a generalized approach of how to extract the isotropic ellipsometric sample parameters from an imaging Mueller-matrix measurement even if the sample is significantly misaligned. They validate the method by layer-thickness calculations based on imaging Mueller-matrix measurements of flat crystalline silicon samples that were misaligned on purpose. Furthermore, they also exploit this method’s capabilities to perform spatially resolved layer-thickness measurements of a single-layer indium-tin-oxide coating on a fused-silica microlens without the need of realignment or repositioning of the sample during the measurement.
The authors describe and interpret curvature-related changes to the ellipsometric readout. As model system for a concave curvature, a set of three spherical microscopic indents in silicon (100) of different sizes was prepared by instrumented indentation testing using a spherical indenter. For reference, these samples were characterized by AFM to reveal the topography of each structure. The concavelike indents were analyzed by Mueller-Matrix imaging ellipsometry to extract lateral intensity images of 12 elements of the Mueller-Matrix. As a result of the detailed analysis of the image elements m22, m23, and m14, it was possible to correlate intensity changes and symmetry properties to depolarization and cross polarization induced by the edge threshold and the curved surface of the indent.