Uncertainty in measurement of overlayer thickness of thermally oxidized silicon using x-ray photoelectron spectroscopy
- Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.
Autor*innen: | Wolfgang UngerORCiD, Thomas Gross, Andreas Lippitz, B. Güttler |
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Dokumenttyp: | Zeitschriftenartikel |
Veröffentlichungsform: | Verlagsliteratur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Surface and interface analysis |
Jahr der Erstveröffentlichung: | 2000 |
Verlag: | Wiley |
Verlagsort: | Chichester |
Ausgabe/Heft: | 29 |
Erste Seite: | 891 |
Letzte Seite: | 894 |
Freie Schlagwörter: | ESCA; Overlayer; SiO2; Uncertainty; XPS |
DOI: | 10.1002/1096-9918(200012)29:12<891::AID-SIA943>3.0.CO;2-A |
ISSN: | 0142-2421 |
ISSN: | 1096-9918 |
Verfügbarkeit des Dokuments: | Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access") |
Bibliotheksstandort: | ZS 53 |
Datum der Freischaltung: | 19.02.2016 |
Referierte Publikation: | Ja |
Datum der Eintragung als referierte Publikation: | 25.01.2001 |