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Microstructure and magnetoresistance of heterogeneous gold-rich Ag3Au1.1Te2

  • Dispersions of very small non-magnetic metal particles or inclusions in a non-magnetic semiconductor matrix are well known to produce unusually large and linear magnetoresistance effects. So far these materials were limited to the binary silver-rich chalcogenides Ag2Se and Ag2Te. In this contribution Ag3AuTe2 was selected as a first candidate for a ternary matrix material, thus offering enhanced capabilities for the generation of heterogeneous microstructure and spatially varying composition on the nanoscale. In gold-rich Ag3Au1.1Te2 two kinds of inhomogeneities are present, namely Au deposits with a size on the micron scale and an inhomogeneous distribution of Au and Ag within the matrix. The matrix consists of micron-sized grains with the structure type of Ag3AuTe2 as studied by electron microscopy. Like the binary silver chalcogenide phases, the material also shows a large and linear magnetoresistance effect. The transversal magnetoresistance effect was measured between 20 K and 270Dispersions of very small non-magnetic metal particles or inclusions in a non-magnetic semiconductor matrix are well known to produce unusually large and linear magnetoresistance effects. So far these materials were limited to the binary silver-rich chalcogenides Ag2Se and Ag2Te. In this contribution Ag3AuTe2 was selected as a first candidate for a ternary matrix material, thus offering enhanced capabilities for the generation of heterogeneous microstructure and spatially varying composition on the nanoscale. In gold-rich Ag3Au1.1Te2 two kinds of inhomogeneities are present, namely Au deposits with a size on the micron scale and an inhomogeneous distribution of Au and Ag within the matrix. The matrix consists of micron-sized grains with the structure type of Ag3AuTe2 as studied by electron microscopy. Like the binary silver chalcogenide phases, the material also shows a large and linear magnetoresistance effect. The transversal magnetoresistance effect was measured between 20 K and 270 K in magnetic fields up to B = 5 T. The results are discussed on the basis of existing models for a large and linear positive MR effect.zeige mehrzeige weniger

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Metadaten
Autor*innen:L. Kienle, V. Duppel, G. Lembke, B. Mogwitz, J. Janek, Marc Kreutzbruck, A. Simon
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Solid state sciences
Jahr der Erstveröffentlichung:2010
Verlag:Elsevier
Verlagsort:Amsterdam
Jahrgang/Band:12
Ausgabe/Heft:10
Erste Seite:1770
Letzte Seite:1778
Freie Schlagwörter:Electron microscopy; Magnetoresistance; Magnetosensor; Nonstoichiometry; Petzite
DOI:10.1016/j.solidstatesciences.2010.07.029
ISSN:1293-2558
ISSN:1873-3085
Verfügbarkeit des Dokuments:Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")
Bibliotheksstandort:Sonderstandort: Publica-Schrank
Datum der Freischaltung:19.02.2016
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:04.11.2010
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