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Optical second-harmonic generation (SHG) on semiconductor electrodes by means of femtosecond and nanosecond-pulse lasers

  • In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well belowIn situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)zeige mehrzeige weniger

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Metadaten
Autor*innen:Wolfgang Kautek, N. Sorg, Jörg KrügerORCiD
Persönliche Herausgeber*innen:M. Brieger
Dokumenttyp:Beitrag zu einem Sammelband
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Semiconductor processing and characterization with lasers
Jahr der Erstveröffentlichung:1995
Verlag:Trans Tech Publ.
Verlagsort:Aedermannsdorf
Ausgabe/Heft:173/174
Erste Seite:285
Letzte Seite:290
Freie Schlagwörter:Etch Process; Femtosecond-Pulse Laser; Fermi-Level Pinning; Interfacial Electronic States; MOS Diode; Nonlinear Electroreflectance; Oxide; SHG; Second-Harmonic Generation; Semiconductors; Silicon; Sub-Picosecond-Pulse Laser
Veranstaltung:1st International Symposium on Semiconductor Processing and Characterization with Lasers - Applications in Photovoltaics
Veranstaltungsort:Stuttgart, Germany
Beginndatum der Veranstaltung:1994-04-18
Enddatum der Veranstaltung:1994-04-20
DOI:10.4028/www.scientific.net/MSF.173-174.285
ISSN:0255-5476
ISBN:0-87849-683-1
Bemerkung:
Serientitel: Materials science forum – Series title: Materials science forum
Verfügbarkeit des Dokuments:Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")
Bibliotheksstandort:Sonderstandort: Publica-Schrank
Datum der Freischaltung:19.02.2016
Referierte Publikation:Nein
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