Refine
Year of publication
Document Type
Way of publication
- Open Access (11)
Keywords
- Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver (2)
- Amplifier noise (1)
- integrated circuit (MMIC) amplifiers (1)
- integrated circuit noise (1)
- microwave field-effect transistor (FET) amplifiers (1)
- monolithic microwave integrated circuit (MMIC) amplifiers (1)
- noise (1)
- semiconductor device noise (1)
Institute
A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup.
Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology
(2022)