@inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {GaN HEMTs for low-noise amplification — status and challenges}, series = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, booktitle = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-5862-4}, doi = {10.1109/INMMIC.2017.7927327}, pages = {4}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{BonaniRudolph, author = {Bonani, Fabrizio and Rudolph, Matthias}, title = {Simulating Noise in Nonlinear Circuits}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @inproceedings{NasserRitterRudolph, author = {Nasser, Caram and Ritter, Dan and Rudolph, Matthias}, title = {Bias dependence of the access resistance in GaN HEMTs}, series = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, booktitle = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-83-949421-1-3}, doi = {10.23919/MIKON.2018.8405197}, pages = {271 -- 273}, language = {en} } @inproceedings{LuoSchniederRudolph, author = {Luo, Peng and Schnieder, Frank and Rudolph, Matthias}, title = {Chalmers GaN HEMT charge model revisited}, series = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, booktitle = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-8-7}, doi = {10.23919/GEMIC.2018.8335055}, pages = {164 -- 167}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology}, series = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, journal = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-7281-3517-5}, doi = {10.1109/APMC46564.2019.9038620}, pages = {222 -- 224}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, D. and Zhao, Zhixing and Lehmann, Steffen and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs}, series = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, journal = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, isbn = {978-1-7281-6809-8}, issn = {2375-0995}, doi = {10.1109/RFIC49505.2020.9218369}, pages = {131 -- 134}, language = {en} }