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Computational modeling of scalar transport and buoyancy effects in turbulent flows using ODTLES
(2012)
Towards a multiscale strategy for modeling high-pressure flow of carbon dioxide for sequestration
(2010)
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated.
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated.
This paper presents an investigation of primary breakup of planar turbulent liquid jets and breakup properties at the surface of turbulent jets in still air at standard conditions. Numerical simulations are carried out for jet exit Reynolds number 23000 and Weber numbers in the range [102–107].
Due to the limitation of direct numerical simulation (DNS) to moderate Reynolds numbers, a stochastic 1D ansatz based on the one-dimensional turbulence (ODT) model is used to simulate a planar liquid jet with a high lateral resolution. ODT permits an affordable high resolution of interface and single-phase property gradients which are key for understanding the local behavior. ODT is a stochastic model simulating turbulent flow evolution along a notional 1D line of sight by applying instantaneous maps to represent the effect of individual turbulent eddies on property profiles. The most relevant mechanisms that influence the primary breakup of liquid jets are found to be represented accurately based on comparisons to experiments and correlations reported in the literature. Building on this finding, future work will focus on the statistics of droplets generated by primary breakup, both to investigate their relationship to breakup mechanisms and to provide input to models of secondary breakup and subsequent spray evolution.
We summarize the group’s progress in applying, analyzing, and improving ODT and ODT-based stochastic turbulence models
like ODTLES. Compared to DNS these models span a wider range of scales while compared to RANS/LES (i) the molecular
effects are retained and (ii) no assumption of scale separation is made. In this regard ODTLES has more properties of DNS than of standard LES.