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Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties

  • Titanium oxide (TiO2) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO2 films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti3+ states, with the lowest content in the PE-ALD grown TiO2 films. The observation of Ti3+ states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in thisTitanium oxide (TiO2) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO2 films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti3+ states, with the lowest content in the PE-ALD grown TiO2 films. The observation of Ti3+ states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti3+ states and leakage current density.show moreshow less

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Metadaten
Author: Chittaranjan DasORCiD, Karsten HenkelORCiDGND, Massimo TallaridaORCiD, Dieter SchmeißerORCiD, Hassan Gargouri, Irina Kärkkänen, Jessica Schneidewind, Bernd Gruska, Michael Arens
DOI:https://doi.org/10.1116/1.4903938
ISSN:1520-8559
ISSN:0734-2101
Title of the source (English):Journal of Vacuum Science and Technology A
Document Type:Scientific journal article peer-reviewed
Language:English
Year of publication:2015
Tag:atomic layer deposition; capacitance-voltage (CV); current-voltage (IV); ellipsometry; in-gap states; plasma enhanced atomic layer deposition; synchrotron radiation photoelectron spectroscopy (SR-PES); titanium oxide (TiO2); x-ray absorption spectroscopy
Volume/Year:2015
Issue number:33
First Page:01A144-1
Last Page:01A144-8
Faculty/Chair:Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie
Institution name at the time of publication:Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik
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