Overview Statistic: PDF-Downloads (blue) and Frontdoor-Views (gray)

Numerical Simulation of Single Species Dopant Diffusion in Silicon under Extrinsic Conditions

Please always quote using this URN: urn:nbn:de:0297-zib-3163
  • In this article we consider a general model for phosphorus diffusion in silicon under extrinsic doping conditions. At such high concentrations we have to include the charged species and the internal electric field of the crystal, both of which can have profound effects on diffusion. In principle, this leads to a very large number of drift--diffusion--reaction equations: one for each charge state of every species, plus one Poisson equation to describe the internal electric field (in terms of the electron/hole concentration). The number of equations can be reduced substantially by making additional assumptions on the distribution of charge states and local equilibrium assumptions concerning the reaction terms. The resulting model turns out to be very interesting for numerical investigation. We solve the problem numerically in two space dimensions with the adaptive finite element program KARDOS and describe the numerical method used here to treat the resulting drift--diffusion--reaction problem.

Download full text files

Export metadata

Additional Services

Share in Twitter Search Google Scholar Statistics - number of accesses to the document
Author:Jens Lang, Wilhelm Merz
Document Type:ZIB-Report
Date of first Publication:1997/10/31
Series (Serial Number):ZIB-Report (SC-97-47)
Accept ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.