• search hit 5 of 35
Back to Result List

Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs

  • Gallium nitride transistors have a smaller die area compared to silicon-based devices, which can lead to thermal challenges in high current density applications. Therefore, thermally optimized packages with a high heat spreading capability in combination with small parasitic are necessary. This work investigates the thermal performance a 7 mΩ, 100 V GaN HEMT in a thermally optimized single chip package with integrated RTD and compares it to the commercial counterpart. The thermal optimized package shows a significantly better transient thermal impedance resulting in a static thermal resistance of 3.1 K/W, which is a 20 % reduction in comparison to the COTS package. The integrated RTD trace has a relative reaction time of 590 ms, which is 30-fold slower in comparison to the junction temperature. To show the identical electrical behavior, although the single chip package is larger, it is compared with the commercial off-the-shelf package and a 5 mΩ, 100 V GaN single chip package in a 300 kHz, 48 V buck converter. Both 7 mΩ versions haveGallium nitride transistors have a smaller die area compared to silicon-based devices, which can lead to thermal challenges in high current density applications. Therefore, thermally optimized packages with a high heat spreading capability in combination with small parasitic are necessary. This work investigates the thermal performance a 7 mΩ, 100 V GaN HEMT in a thermally optimized single chip package with integrated RTD and compares it to the commercial counterpart. The thermal optimized package shows a significantly better transient thermal impedance resulting in a static thermal resistance of 3.1 K/W, which is a 20 % reduction in comparison to the COTS package. The integrated RTD trace has a relative reaction time of 590 ms, which is 30-fold slower in comparison to the junction temperature. To show the identical electrical behavior, although the single chip package is larger, it is compared with the commercial off-the-shelf package and a 5 mΩ, 100 V GaN single chip package in a 300 kHz, 48 V buck converter. Both 7 mΩ versions have identical efficiencies of ≈97.5 % up to 50 A output current, slightly outperforming the 5 mΩ GaN transistor. With its combination of improved thermal characteristics and lowinductance, the thermally optimized package of the GaN device offers more degrees of freedom in the design of power converter to exploit trade-offs between longer lifetime, higher temperature operation and power density. Index Terms—gallium nitride, high electron mobility transistor, (thermal) performance evaluation, thermally optimized package, DC/DC converter, high current application, parallelizationshow moreshow less

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author:Dominik Koch, Vladimir Polezhaev, Ankit Bushan Sharma, Kevin Munoz Barón, Till HuesgenORCiD, Ingmar Kallfass
DOI:https://doi.org/10.1109/ISPSD57135.2023.10147544
Identifier:979-8-3503-9682-9 OPAC HS OPAC extern
Identifier:979-8-3503-9683-6 OPAC HS OPAC extern
Parent Title (English):Proceedings of the 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Publisher:IEEE
Place of publication:Piscataway
Document Type:conference proceeding (article)
Conference:35st International Symposium on Power Semiconductor Devices & ICs (ISPSD) , May 28- June 1, Hong Kong, China
Language:English
Date of Publication (online):2023/06/14
Year of first Publication:2023
Tag:GaNmsPEBB
Volume:2023
Number of pages:4 Seiten
First Page:48
Last Page:51
Institutes:Fakultät Elektrotechnik
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Sharma, Ankit Bhushan
Polezhaev, Vladimir
Publication reviewed:begutachtet
Release Date:2023/11/24
Verstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.