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The production of CIS thin film solar cells is still employing some mechanical steps of structuring, where thin layers have to be selectively separated in three patterns (P1 to P3) for the monolithic serial interconnection. We report on the high speed structuring of these patterns by picosecond laser ablation at 1064 nm. We demonstrate on 100x100 mm2 samples, that the molybdenum back electrode can be structured with a process speed of up to 15 m/s. The ZnO front electrode film can be line separated with up to 15 m/s, the CIS absorber layer is structured with up to 4 m/s. Furthermore we extended our laser processes to 300 x 300 mm2 pilot line samples which were displaying efficiencies of 13.4%.
CIS (Cu(In,Ga)(S,Se)2) thin film solar cells show a high potential to achieve the efficiencies of Si wafer-based solar cells. The commonly applied patterning processes for the integrated interconnects are based on nanosecond laser ablation and mechanical scribing. Both methods introduce damages on the thin films by thermal effects and mechanical forces. By picosecond laser processing we realized all three patterning steps to the monolithic thin films CIS modules, namely the separation of the molybdenum back electrode, the absorber and the ZnO font electrode (P1, P2 and P3 respectively). We achieved an efficiency of 14.7% for 300 x 300 mm² modules.