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Institute
A model has been developed to simulate electromigration degradation in an interconnect segment in two
dimensions using finite differences. The model was deployed on a parallel computer to statistically assess the lifetimes. The simulation takes into account the diffusion paths for electromigration mass transport along the grain boundaries and the capping layer. The microstructure is generated with a Monte Carlo
algorithm, using a modified Potts model. Diffusivities along the grain boundaries and the capping layers
were applied as multiples of a base diffusivity and were statistically scattered. The simulation results correlate well with electromigration tests.