Interface engineering of photoelectrochemically prepared Si surfaces
- The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.
Author: | Hans-Joachim Lewerenz, Mohammed Aggour, Chris Murrell, M. Kanis, Patrick Hoffmann, H. Jungblut, Dieter SchmeißerORCiD |
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Document Type: | Scientific journal article not peer-reviewed |
Language: | English |
Year of publication: | 2002 |
Tag: | Mean Free Paths; Range; Silicon |
Quelle aus UBICO: | Journal of Non-Crystalline Solids 303(2002)1, S. 1-5, 0022-3093 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |
Institution name at the time of publication: | Fakultät für Mathematik, Naturwissenschaften und Informatik (eBTU) / LS Angewandte Physik / Sensorik |