New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides
- Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the depositionThermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films.…
Author: | Massimo TallaridaORCiD, Karsten HenkelORCiDGND, Hassan Gargouri, Jörg Haeberle, Bernd Gruska, Matthias Arens, Dieter SchmeißerORCiD |
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URL: | http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/3?lang=en |
ISSN: | 0420-0195 |
Title of the source (English): | Verhandlungen der Deutschen Physikalischen Gesellschaft |
Publisher: | Deutsche Physikalische Gesellschaft |
Place of publication: | Bad Honnef |
Document Type: | Conference Proceeding |
Language: | English |
Year of publication: | 2014 |
Tag: | Al2O3; Atomic layer deposition; Plasma enhanced atomic layer deposition; X-ray photoelectron spectroscopy; dielectric properties; spectroscopic ellipsometry |
Series ; volume number: | Verhandlungen der Deutschen Physikalischen Gesellschaft : Reihe 6, Band 49 |
Faculty/Chair: | Fakultät 1 MINT - Mathematik, Informatik, Physik, Elektro- und Informationstechnik / FG Angewandte Physik und Halbleiterspektroskopie |