Controlled deposition of plasma-polyaniline thin film by PECVD: Understanding the influence of aniline to argon ratio

  • Low pressure capacitively coupled radiofrequency plasmas operated in a mixture of aniline vapor and argon are used for the deposition of thin films on silicon substrates. The influence of the aniline vapor fraction in the gas mixture upon the plasma properties and the characteristics of the deposited thin film is analyzed. Plasmas diagnostics are carried out using mass spectrometry and optical emission spectroscopy and the thin films are characterized by means of Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and near-edge X-ray absorption fine-structure spectroscopy. Experiments highlight that the use of a low aniline/argon ratio leads to the deposition of an amorphous film whereas high-aniline/argon ratios allow the synthesis of a plasma polymer similar to polyaniline. The properties of such plasmas and the mechanisms involved in the deposition process are discussed in detail.

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Metadaten
Author:Cedric PattynORCiD, Dario SciacquaORCiD, Lukas Kwiedor, Andrea JagodarORCiD, Thomas StrunskusORCiD, Franziska TraegerORCiD, Thomas Lecas, Eva KovacevicORCiD, Johannes BerndtORCiD
URN:urn:nbn:de:hbz:1010-opus4-49095
DOI:https://doi.org/10.1002/ppap.202100233
ISSN:1612-8869
Parent Title (English):Plasma Processes and Polymers
Publisher:Wiley-VCH
Document Type:Article
Language:English
Date of Publication (online):2022/02/23
Year of first Publication:2022
Publishing Institution:Westfälische Hochschule Gelsenkirchen Bocholt Recklinghausen
Release Date:2026/01/05
Tag:NEXAFS; XPS; mass spectrometry; plasma; polyaniline; polymerization
Volume:2022
Issue:Volume 19, Issue 5
Article Number:e2100233
Page Number:10
Institutes:Fachbereiche / Ingenieur- und Naturwissenschaften
Institute / Westfälisches Energieinstitut
Licence (German):Creative Commons - Namensnennung - Nicht kommerziell - Keine Bearbeitung
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