Fachbereich Ingenieur- und Naturwissenschaften
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Thermally stimulated processes have been studied in thin films of phenanthroline derives to describe the states that had been localized. Ultraviolet Photoelectron Spectroscopy had checked out before thin films of new pyrrolo[l,2-a][l,10] phenanthroline derivatives [1], in order to further applications in optoelectronic devices. The investigated compounds have an electronic band structure which is due to the substituent (R=NO2, Cl) induced transformations of molecular orbitals. Thermally stimulated discharge currents (TSDC) attested dipolar and charge transport mechanisms. Each TSDC peak has been assigned to elementary processes that are different utilizing in addition dielectric spectroscopy (DES), and the mean trap depths have been approximated from thermally stimulated luminescence (TSL) curves.
Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 103 Ω◻ whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm2. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.