Fachbereich Ingenieurwesen / Wirtschaftsingenieurwesen (bis 8/2014)
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- band-pass filter (3)
- dye (3)
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- double exposure lithography (2)
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Quantum dots allow the generation of charge carriers upon illumination. When these particles are attached to an electrode a photocurrent can be generated. This allows their use as a light-switchable layer on the surface. The QDs can not only exchange electronics with the electrode, but can also interact with donor or acceptor compounds in solution providing access to the construction of signal chains starting from an analytic molecule. The magnitude and the direction of the photocurrent depend on several factors such as electrode polarization, solution pH and composition. These defined dependencies have been evaluated with respect to the combination of QD-electrodes with enzyme reactions for sensorial purpose. CdSe/ZnS-QD-modified electrodes can be used to follow enzymatic reactions in solution based on the oxygen sensitivity. In order to develop a photoelectrochemical biosensor, e.g. glucose oxidase is immobilized on the CdSe/ZnS-electrode. One immobilization strategy applies the layer-by-layer-technique of GOD and a polyelectrolyte. Photocurrent measurements of such a sensor show a clear concentration dependent behavior. The principle of combing QD oxidase. The sensitivity of quantum dot electrodes can be influenced by additional nanoparticles, but also by multiple layers of the QDs. In another direction of research it can be influenced by additional nanoparticles, but also by multiple layers of the QDs. In another direction of research it can be demonstrated that direct electron transfer from excited quantum dots can be achieved with the redox protein cytochrome c. This allows the detection of the protein, but also interaction partners such as a enzymes or superoxide.
The formation of periodical nanostructures with femtosecond laser pulses was used to create highly efficient substrates for surface-enhanced Raman spectroscopy (SERS). We report about the structuring of silver and copper substrates and their application to the SERS of DNA (herring sperm) and protein molecules (egg albumen). The maximum enhancement factors were found on Ag substrates processed with the second harmonic generation (SHG) of a 1-kHz Ti:sapphire laser and structure periods near the SHG wavelength. In the case of copper, however, the highest enhancement was obtained with long-period ripples induced with at fundamental wavelength. This is explained by an additional significant influence of nanoparticles on the surface. Nanostructured areas in the range of 1.25 mm2 were obtained in 10 s. The surfaces were characterized by scanning electron microscopy, Fast Fourier Transform and Raman spectroscopy. Moreover, the role of the chemical modification of the metal structures is addressed. Thin oxide layers resulting from working in atmosphere which improve the biocompatibility were indicated by vibration spectra. It is expected that the detailed study of the mechanisms of laser-induced nanostructure formation will stimulate further applications of functionalized surfaces like photocatalysis, selective chemistry and nano-biology.
Raman scattering in planar silicon on insulator (SOI) waveguides with 2 μm width, 220 nm height and 2 cm length is investigated. A cw Nd:YAP laser at 1340.6 nm with 7 GHz FWHM spectral width is used as the pump source. A lensed fiber of 2.5 μm focus diameter is used to couple the pump laser into the waveguide. The coupling efficiency is estimated to be around 10%. Spontaneous Raman scattering is observed with as low as 2.5 mW pump power inside the waveguide. The spontaneous Raman spectrum is measured by an optical spectrum analyzer. The first order Raman peak is measured at around 1441.4 nm corresponding to a Raman shift of 15.6 THz, while the FWHM of Raman spectrum is measured as around 100 GHz. Maximum Raman output of around 90 pW is obtained by around 22 mW pump. The stimulated Raman gain coefficient is estimated as around 56 cm/GW from the relationship between spontaneous Raman output power and pump power. A temperature dependence of Raman frequency shift of about 0.6 GHz/K is measured. The spontaneous anti-Stokes Raman scattering output peak at 1253 nm is also observed with around 35 mW pump. Stimulated Raman amplification measurement is carried out with a SLED white light source as probe signal. With 35 mW pump power, around 0.6 dB gain has been determined with both pump and probe being TE polarized.
We have designed, fabricated and investigated one-dimensional (1D) micro-cavities in Silicon-on-Insulator (SOI) waveguides. The single mode waveguides are fabricated in a 220 nm silicon device layer. The 1D micro-cavities in Fabry-Perot structure consist of two Bragg-mirror regions formed by a sinusoidal modulation of the waveguide width. The mirror regions are separated by a sub-micron spacer. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography. The waveguides as well as the width modulated mirror regions are designed using a single mask and are fabricated in a shallow trench process. The transmission spectra of these width modulated micro-cavities with different mirror reflectivities and cavity lengths are investigated. Q-factors up to 855 could be observed at 1550 nm wavelength with low insertion loss of 1.9 dB. The width modulated micro-cavities, including the mirror regions, have lengths of less than 20 microns and widths of maximum 450 nm. These small foot-print cavities act as band pass filters and can be used as resonators for laser or electro-optic modulation of light.
We have investigated microcavities in Silicon-on-Insolator (SOI) waveguides. The rectangular waveguides with 500 nm width are fabricated in the 220 nm silicon device layer. The microcavities are formed by one-dimensional photonic crystals in Fabry-Perot structure directly written in the waveguides. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography, where the waveguides as well as the photonic crystals are created in the same step using a single mask. In order to achieve a desired spectral shape of the filter function capable for several applications, a number of different cavities were investigated, e.g. single cavities of first and higher order as well as multi-cavity filters. The experimental results are compared with simulations of photonic crystal microcavities in strip waveguides. The spectral transmission function of such filters dependent on the design parameters are calculated by an analysis based on Finite-Difference-Time-Domain (FDTD) method.
We have developed thin film Fabry-Perot filters directly coated on optical fibers to archive a high level of integration with a reduction of optical elements. Such band-pass filters can be used in fiber optical sensor systems, and for fiber communication, e.g. CWDM applications. The filters cavities consist of a single spacer and two dielectric mirrors. The dielectric mirrors are deposited by PVD directly on end-faces of single-mode optical fibers. Dielectric as well as polymeric materials were applied as the spacer layer. Polymeric spacer layers were deposited by dip coating. The influence of the mirror reflectivity on the transmission band of the Fabry-Perot filters was investigated. Furthermore, the optical performance of filters with first order (λ/2) as well as higher order spacers was analyzed. The experimental results are compared with numerical analysis of Fabry-Perot cavities on the end-face of cylindrical waveguides. The spectral characteristic of the filters are calculated using a software solving Maxwell´s equations by a FDTD method. The layer design of the filters and the deposition process were optimized for maximum transmission and narrow bandwidth of the transmission peak. Passive band-pass filters on fiber end-faces were designed, fabricated and characterized for transmission wavelengths of 945 nm, 1300 nm, as well as 1550 nm. Bandwidths as narrow as 1 nm could be achieved for 945 nm.
Organic film deposition in vacuum is fast developing scientific and industrial domain. We developed installation for deposition of organic films equipped with optical spectrometer for measurements in situ. We are developing new dyes aimed for application in waveguide sensor, nonlinear optics and studying film organisation during deposition. Fluorinated azo-dyes and azomethine dyes were synthesized at University of Applied Sciences Wildau and at the Institute of Organic Chemistry, Kyiv. Compounds were evaporated at a pressure of 10-3 Pa using resistive heated crucible. Glass and glass covered with polytetrafluoroethylene (PTFE) film are used as substrates. The films were studied with Polytec and StellarNet spectrometers and an atomic force microscope. Optical spectra of the dye films revealed, that some compounds were decomposed during evaporation. Several kinds of dyes were evaporated and deposited without decomposition. Some deposited films formed H-aggregates and other types of aggregates. AFM images of dye films showed that their morphology depends on the chemical structure of the compounds and on the nature of the substrate on which the film was grown.
We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.
Second harmonic generation (SHG) in the oriented film of symmetric squaraine (Sq) was studied. Oriented Sq film on aligned polytetrafluoroethylyne (PTFE) sublayer prepared by vacuum deposition with subsequent rubbing using a cloth has been obtained. However, the mechanisms of orientation and SHG are still not clear. Methyl and ethyl substituted hydroxyl-Sq (OHSq) compounds formed oriented films with dichroic ratio of 8 on PTFE layer but with dichroic ratio of 1,5 on Teflon AF. Second layer deposition of Me-OHSq on Et-OHSq or of Et-OHSq on Me-OHSq led to an increase of the film dichroic ratio. Only the film, where Me-OHSq was first layer, exhibits an increase of SHG signal after deposition of second layer. Small differences in bi-layered OHSq films structure was detected by X-Ray diffraction (XRD) spectra.
The application of Double Exposure Lithography (DEL) would enlarge the capability of 248 nm exposure technique to smaller pitch. We will use the DEL for the integration of critical layers for dedicated applications requiring resolution enhancement into 0.13 μm BiCMOS technology. In this paper we present the overlay precision and the focus difference of 1st and 2nd exposure as critical parameters of the DEL for k1 ≤ 0.3 lithography (100 nm half pitch) with binary masks (BIM). The realization of excellent overlay (OVL) accuracy is a main key of double exposure and double patterning techniques. We show the DEL requires primarily a good mask registration, when the wafer stays in the scanner for both exposures without alignment between 1st and 2nd exposure. The exposure tool overlay error is more a practical limit for double patterning lithography (DPL). Hence we prefer the DEL for the resolution enhancement, especially if we use the KrF high NA lithography tool for 130 nm generation. Experimental and simulated results show that the critical dimension uniformity (CDU) depends strongly on the overlay precision. The DEL results show CDU is not only affected by the OVL but also by an optical proximity effect of 1st and 2nd exposure and the mask registration. The CD uniformity of DEL demands a low focus difference between 1st and 2nd exposure and therefore requires a good focus repeatability of the exposure tool. The Depth of Focus (DOF) of 490 nm at stable CD of lines was achieved for DEL. If we change the focus of one of the exposures the CD-focus performance of spaces was reduced with simultaneous line position changing. CDU vs. focus difference between 1st and 2nd exposure demands a focus repeatability <100 nm for the exposure tool. Summary, the results show DEL has the potential to be a practical lithography enhancement method for device fabrication using high NA KrF tool generation.