Refine
Document Type
Year of publication
- 2016 (5) (remove)
Institute
Language
- English (5)
Has Fulltext
- yes (5)
Is part of the Bibliography
- yes (5)
Keywords
- 3D measurement (1)
- Fabry-Perot (1)
- borescope (1)
- calibration (1)
- defect (1)
- imaging (1)
- lens design (1)
- photoacoustic (1)
- sensor (1)
- triangulation (1)
In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations.
Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer.
In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters.
Fabry-Perot (FP) polymer film sensors offer high acoustic sensitivity, small element sizes, broadband frequency response and optical transmission to enable high resolution, backward mode photoacoustic (PA) imaging. Typical approaches to sensor fabrication involve the deposition of stacks of alternating dielectric materials to form interferometer mirrors, which are separated by a polymer spacer. If hygroscopic soft dielectric materials are used, a protective polymer layer is typically required. In this study, methods for the deposition of water-resistant, hard dielectric materials onto polymers were explored to improve the robustness and performance of the sensors. This involved the optimisation of the fabrication process, the optical and acoustic characterisation of the sensors, and a comparison of the frequency response with the output of an acoustic forward model. The mirrors, which were separated by a 20 μm Parylene spacer, consisted of eight double layers of Ta2O5 and SiO2 deposited onto polymer substrates using temperature-optimised electron vapour deposition. The free spectral range of the interferometer was 32 nm, its finesse FR = 91, and its visibility V = 0.72. The noise-equivalent pressure was 0.3 kPa (20 MHz bandwidth). The measured frequency response was found to be more resonant at 25 MHz compared to sensors with soft dielectric mirrors, which was also in good agreement with the output of a forward model of the sensor. The sensors were used in a PA scanner to acquire 3-D images in tissue phantoms.
Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.