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The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.
The two main features of the memristive devices which makes them the promising candidates for neuromorphic applications are low power consumption and CMOS compatibility. The monolithic integration of memristive devices with CMOS circuitry paves the way for in-memory computing. This chapter focuses on the factors governing the CMOS integration process. Firstly, the influence of CMOS baseline technology selection on the memristor module is briefly discussed. Secondly, the selection of metal level interconnects and their effect on the memristive device performance is explained. Further, the widely used deposition technique for the CMOS compatible memristive switching layers is presented. Finally, the implementation of the optimized process for the fabrication of the memristive module and its influence on the device performance is presented in terms of electrical characterization results.