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Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

  • Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diagnostic of graphene was performed by a fast and nondestructive metrology method based on the combination of spectroscopic ellipsometry and reflectometry (SE/R), realized within a wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of a multilayer film stack, including graphene, interface layer GeOx underneath graphene, and surface roughness is developed and applied for process control. The authors found a relationship between the quality of graphene and the growth of GeOx beneath graphene. Enhanced oxidation of Ge beneath graphene was registered as a long-term process. SE/R measurements were validated and complemented using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry. This comparative study shows a high potential for optical metrology of graphene deposited on Ge/Si structures, due to its great sensitivity, repeatability, and flexibility, realized in a nondestructive way.

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Author:Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus VillringerORCiD, Helge Lux, Florian Bärwolf, Marco LiskerORCiD, Andreas MaiORCiD
URN:urn:nbn:de:kobv:526-opus4-16083
DOI (Version of Record):https://doi.org/10.1116/1.5122792
Parent Title (English):Journal of Vacuum Science & Technology B
Publisher:American Vacuum Society (AVS)
Document Type:Article
Language:English
Year of Publication:2019
Year of first Publication:2019
Publishing Institution:Technische Hochschule Wildau
Release Date:2022/05/11
Volume:37
Issue:6
Article Number:062927
Source:Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science & Technology B 37, 062927 (2019) https://doi.org/10.1116/1.5122792
Copyright:This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in "Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science & Technology B 37, 062927 (2019)" and may be found at https://doi.org/10.1116/1.5122792.
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Licence (German):Das Dokument ist urheberrechtlich geschützt
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