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Very high aspect ratio through silicon via reflectometry

  • Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.

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Author:Joachim Bauer, Friedhelm Heinrich, Oksana Fursenko, Steffen Marschmeyer, Adrian Bluemich, Silvio Pulwer, Patrick SteglichORCiD, Claus VillringerORCiD, Andreas MaiORCiD, Sigurd SchraderORCiD
URN:urn:nbn:de:kobv:526-opus4-13758
DOI (Version of Record):https://doi.org/10.1117/12.2269957
ISSN:1996-756X
Parent Title (English):Proceedings of SPIE
Document Type:Conference Proceeding
Language:English
Year of Publication:2017
Publishing Institution:Technische Hochschule Wildau
Release Date:2021/02/16
Source:J. Bauer, F. Heinrich, O. Fursenko, S. Marschmeyer, A. Bluemich, S. Pulwer, P. Steglich, C. Villringer, A. Mai, and S. Schrader "Very high aspect ratio through silicon via reflectometry", Proc. SPIE 10329, Optical Measurement Systems for Industrial Inspection X, 103293J (26 June 2017); https://doi.org/10.1117/12.2269957
Copyright:Copyright (2017) Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Licence (German):Das Dokument ist urheberrechtlich geschützt
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