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Optical proximity correction for 0.13 um SiGe:C BiCMOS

  • We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.

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Author:Sebastian Geisler, Joachim Bauer, Ulrich Haak, Ulrich A. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, Harald Beyer, Martin Niehoff
URN:urn:nbn:de:kobv:526-opus4-15194
DOI (Version of Record):https://doi.org/10.1117/12.798786
Publisher:Society of Photo-Optical Instrumentation Engineers (SPIE)
Document Type:Conference Proceeding
Language:English
Year of Publication:2008
Publishing Institution:Technische Hochschule Wildau
Release Date:2021/09/16
Tag:0.13µm SiGe:C BiCMOS; optical proximity correction
First Page:376
Last Page:381
Source:S. Geisler, J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, H. Beyer, and M. Niehoff "Optical proximity correction for 0.13 μm SiGe:C BiCMOS", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (2 May 2008); https://doi.org/10.1117/12.798786
Copyright:Copyright 2008 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Faculties an central facilities:Fachbereich Ingenieurwesen / Wirtschaftsingenieurwesen (bis 8/2014)
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Licence (German):Das Dokument ist urheberrechtlich geschützt
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