Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

  • Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 103 Ω◻ whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm2. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.

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Metadaten
Author:Helge Lux, Peter Siemroth, Anna Sgarlata, Paolo Prosposito, Markus Andreas Schubert, Mauro CasalboniORCiD, Sigurd SchraderORCiD
URN:urn:nbn:de:kobv:526-opus4-9738
DOI:https://doi.org/10.1063/1.4921448
ISSN:1089-7550
Parent Title (English):Journal of Applied Physics
Document Type:Article
Language:English
Year of Publication:2015
Publishing Institution:Technische Hochschule Wildau
Release Date:2017/06/07
Volume:117
Issue:19
Source:The following article appeared in Lux et al., J. Appl. Phys. 117, 195304 (2015) and may be found at http://dx.doi.org/10.1063/1.4921448.
Copyright:This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Licence (German):Das Dokument ist urheberrechtlich geschützt
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