CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release

  • Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU.

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Metadaten
Author:Patrick SteglichORCiD, Siegfried Bondarenko, Christian Mai, Martin Paul, Michael G. Weller, Andreas MaiORCiD
URN:urn:nbn:de:kobv:526-opus4-13649
DOI (Version of Record):https://doi.org/10.1109/LPT.2020.3019114
ISSN:1941-0174
Parent Title (English):IEEE Photonics Technology Letters
Document Type:Article
Language:English
Year of Publication:2020
Publishing Institution:Technische Hochschule Wildau
Release Date:2021/01/08
Volume:32
Issue:19
First Page:1241
Last Page:1244
Source:Steglich, P., Bondarenko, S., Mai, C., Paul, M., Weller, M., & Mai, A. (2020). CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release IEEE Photonics Technology Letters. 32 (19), 1241-1244.
Faculties an central facilities:Fachbereich Ingenieur- und Naturwissenschaften
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Licence (German):Creative Commons - CC BY - Namensnennung 4.0 International
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