TY - JOUR A1 - Steglich, Patrick A1 - Mai, Christian A1 - Villringer, Claus A1 - Mai, Andreas T1 - Direct observation and simultaneous use of linear and quadratic electro-optical effects JF - Journal of Physics D: Applied Physics N2 - We report on the direct observation and simultaneous use of the linear and quadratic electro-optical effect and propose a method by which higher-order susceptibilities of electro-optical materials can be determined. The evaluation is based on the separation of the second- and third-order susceptibilities and the experimental technique uses a slot waveguide ring resonator fabricated in integrated photonic circuit technology, which is embedded by a guest-host polymer system consisting of the azobenzene dye Disperse Red 1 in a poly(methyl methacrylate) matrix as an active electro-optical material. The contribution of both effects on the electro-optical response under the influence of static and time-varying electrical fields is investigated. We show that the quadratic electro-optical effect has a significant influence on the overall electro-optical response even with acentric molecular orientated molecules. Our findings have important implications for developing electro-optical devices based on polymer-filled slot waveguides and give rise to advanced photonic circuits. Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13032 SN - 1361-6463 VL - 53 IS - 12 ER - TY - JOUR A1 - Lux, Helge A1 - Edling, Matthias A1 - Lucci, Massimiliano A1 - Kitzmann, Julia A1 - Villringer, Claus A1 - Siemroth, Peter A1 - De Matteis, Fabio A1 - Schrader, Sigurd T1 - The Role of Substrate Temperature and Magnetic Filtering for DLC by Cathodic Arc Evaporation JF - Coatings N2 - Diamond-like carbon (DLC) films were deposited using two different types of high current arc evaporation. The first process used a magnetic particle filter to remove droplets from the plasma. For the second process, the samples were put into a metallic cage which was placed directly above the plasma source. For both processes, we varied the substrate temperature from 21 to 350 °C in order to investigate the temperature effect. The samples were characterized using SEM, AFM, XPS, Raman Spectroscopy, Ellipsometry, Photometry, and Nano Indentation in order to compare both methods of deposition and provide a careful characterization of such DLC films. We found that the sp3 content and the hardness can be precisely adjusted by changing the substrate temperature. Furthermore, in the case of unfiltered deposition, the optical constants can be shifted in the direction of higher absorbance in order to produce black and hard carbon coatings. KW - DLC KW - ta-C KW - arc evaporation KW - substrate temperature KW - hardness KW - optical constant KW - ellipsometry Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-12295 SN - 2079-6412 VL - 9 IS - 5 SP - 345 ER - TY - JOUR A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Dietzel, Birgit A1 - Mai, Christian A1 - Schrader, Sigurd A1 - Casalboni, Mauro A1 - Mai, Andreas T1 - On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers Using a Photonic Integrated Circuit Technology JF - IEEE Photonics Journal N2 - A novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical materials by using a silicon-on-insulator microring resonator is presented. The microring consists of a silicon slot waveguide enabling large dc electric field strength at low applied voltages. The dispersion of third-order hyperpolarizability of a linear conjugated dye is approximated by using a two-level model for the off-resonant spectral region. As an example, the dispersion of the resonance wavelength of the resonator filled with a dye doped polymer was measured in dependence of the applied dc voltage. The polymer was poly (methylmethacrylate) doped with 5 wt% disperse red 1 (DR1), and the measurements have been carried out at the telecommunication wavelength band around 1550 nm (optical C-band). The described measurements represent a new technique to determine the dispersion of the third-order susceptibility and molecular hyperpolarizability of the material filled into the slot of the ring-resonator. KW - electro-optical device KW - nonlinear optics KW - integrated optics KW - integrated optics material KW - optical material KW - integrated optics device KW - polymer active device Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-12307 SN - 1943-0655 VL - 11 IS - 3 ER - TY - JOUR A1 - Bondarenko, Siegfried A1 - Villringer, Claus A1 - Steglich, Patrick T1 - Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding JF - Applied Sciences N2 - Nonlinear optical dyes doped in optical polymer matrices are widely used for electro-optical devices. Linear optical properties change with dye concentration, which leads to a change in modal properties, especially in nano-structured integrated waveguides such as silicon slot-waveguides. Here, we investigate the influence of a nonlinear optical dye on the performance of a silicon-organic hybrid slot-waveguide. A simulation study of the modal and optical confinement properties is carried out and dependence of the structural parameters of the slot-waveguide and the organic cladding material is taken into account. As cladding material, a guest-host polymer system is employed comprising the nonlinear optical dye Disperse Red 1 (DR1) doped in a poly[methyl methacrylate] (PMMA) matrix. The refractive indices of doped and undoped PMMA were deduced from ellipsometric data. We present a guideline for an optimized slot-waveguide design for the fabrication in silicon-on-insulator technology giving rise to scalable, high-performance integrated electro-optical modulators. KW - silicon photonics KW - modeling and simulation at the nanoscale KW - nonlinear optics at the nanoscale KW - slot waveguide KW - silicon-on-insulator technology Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-10716 SN - 2076-3417 VL - 9 IS - 1 PB - MDPI ER - TY - CHAP A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Dümecke, Silvio A1 - Padilla-Michel, Yazmin A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Silicon-On-Insulator Slot-Waveguide Design Trade-Offs T2 - Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology : vol. 2 N2 - Silicon-on-insulator slot-waveguide structures are designed and analysed numerically. We present our theoretical investigation of field confinement factors and effective nonlinear areas for different waveguide structures in order to find optimized geometrical dimensions. It is shown that a slot-waveguide with a height of 220 nm, a slot width of 180 nm and a silicon rail width of 180 nm provides a five times higher field confinement in the cladding region compared to conventional strip-waveguides which explains the high sensitivity of slotwaveguide based label-free bio-sensors. KW - slot waveguide KW - silicon-organic hybrid technology KW - optical field confinement KW - effective nonlinear area Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-20104 SP - 47 EP - 52 PB - SciTePress CY - Setúbal ER - TY - JOUR A1 - Villringer, Claus A1 - Steglich, Patrick A1 - Pulwer, Silvio A1 - Schrader, Sigurd A1 - Laufer, Jan T1 - Electro-optical properties of doped polymers with high transparency in the visible wavelength range JF - Optical Materials Express N2 - The electro-optical (EO) properties of poly(methyl methacrylate) and the photopolymer poly(vinyl cinnamate) doped with varying concentrations of the EO chromophore 2-Methyl-4-nitroaniline were measured. The EO polymers were embedded in Fabry-Pérot etalons for the simultaneous determination of the Pockels and Kerr coefficients from measurements of the fringe shift induced by an external electric field. It was found that the host polymer has a significant impact on the EO performance and that the undoped host polymers exhibit a significant Pockels effect. Moreover, the Kerr effect provides a substantial contribution of 27% to the total change of the refractive index at relatively high electric field strengths of E = 91.2 MV m−1. KW - Bragg reflector KW - fiber optic coupler KW - refractive index KW - spatial light modulator KW - transparency KW - tunable filter Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15480 VL - 11 IS - 11 SP - 3801 EP - 3811 PB - Optica Publishing Group ER - TY - JOUR A1 - Kirchner, Thomas A1 - Villringer, Claus A1 - Laufer, Jan T1 - Evaluation of ultrasound sensors for transcranial photoacoustic sensing and imaging JF - Photoacoustics N2 - Photoacoustic imaging through skull bone causes strong attenuation and distortion of the acoustic wavefront, which diminishes image contrast and resolution. As a result, transcranial photoacoustic measurements in humans have been challenging to demonstrate. In this study, we investigated the acoustic transmission through the human skull to design an ultrasound sensor suitable for transcranial PA imaging and sensing. We measured the frequency dependent losses of human cranial bones ex vivo, compared the performance of a range of piezoelectric and optical ultrasound sensors, and imaged skull phantoms using a PA tomograph based on a planar Fabry–Perot sensor. All transcranial photoacoustic measurements show the typical effects of frequency and thickness dependent attenuation and aberration associated with acoustic propagation through bone. The performance of plano-concave optical resonator ultrasound sensors was found to be highly suitable for transcranial photoacoustic measurements. KW - transcranial KW - ultrasound sensor KW - photoacoustic KW - optoacoustic KW - Fabry-Perot Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-17993 SN - 2213-5979 VL - 33 PB - Elsevier ER - TY - JOUR A1 - Sopinskyy, Mykola A1 - Grytsenko, Kostyantyn A1 - Villringer, Claus A1 - Kolomzarov, Yurii A1 - Schrader, Sigurd T1 - Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem JF - Semiconductor Physics, Quantum Electronics & Optoelectronics N2 - Ellipsometrically obtained spectral dependences of ordinary αxy and extra-ordinary αz extinction/attenuation coefficients within the spectral range λ = 300…980 nm of uniaxially anisotropic polytetrafluoroethylene (PTFE) films were analyzed. We considered the capabilities and specific features of the graphical representation technique for determining the contribution of Rayleigh scattering and Urbach absorption to light attenuation in the spectral range beyond fundamental absorption. It has been shown that the graphical approach enables to estimate these contributions qualitatively, semi-quantitatively or quantitatively, depending on the situation. The conclusions made using the analysis of graphical representation are confirmed by numerical solution of the inverse problem via simulation of the αxy (λ), αz (λ) experimental dependences within the framework of a best-fit procedure. Being based on both of these approaches, we have ascertained that, in the as-prepared PTFE films, the so-called anomalous light scattering (ALS) with the spectral dependence of scattering coefficient αs ≈ as λ–p (p > 4) takes place. Transformation of scattering from ALS to the Rayleigh one with p ≈ 4 due to annealing is accompanied by an increase of Urbach (subband) absorption. Both of these factors cause narrowing the dynamic range of extinction coefficient values. Both scattering and absorption coefficients are higher for the component of light polarized along the normal to the substrate as compared to the component polarized in parallel to it. The relationship between observed behavior of the scattering and absorption coefficients and the film structure has been discussed. KW - Rayleigh scattering KW - Urbach tail KW - absorption coefficient KW - scattering coefficient KW - graphical method KW - ellipsometry KW - polytetrafluoroethylene Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-18035 SN - 1605-6582 VL - 26 IS - 3 SP - 303 EP - 314 PB - National Academy of Sciences of Ukraine. Institute for Semiconductor Physics CY - Kyiv ER - TY - JOUR A1 - Grytsenko, Kostyantyn A1 - Kolomzarov, Yurii A1 - Lytvyn, Peter A1 - Kondratenko, Olga A1 - Sopinskyy, Mykola A1 - Lebedyeva, Iryna A1 - Niemczyk, Agata A1 - Baranowska, Jolanta A1 - Moszyński, Dariusz A1 - Villringer, Claus A1 - Schrader, Sigurd T1 - Optical and Mechanical Properties of Thin PTFE Films, Deposited from a Gas Phase JF - Macromolecular Materials and Engineering N2 - Thin polytetrafluoroethylene (PTFE) films are produced by deposition from a gas phase by two methods: electron-enhanced vacuum deposition (EVD) and EVD + low-temperature plasma (LTP). Structure, morphology, and composition of the films are studied by IR spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. They are close to the structure of bulk PTFE. The roughness of the films’ surface is changed with gas pressure and LTP power variations. Films are transparent from UV to near-infrared regions. Refractive and extinction indices and their anisotropy are measured by spectral ellipsometry. They are tuned by variations of deposition conditions. Hardness and Young modulus of the films are increased if EVD + low power LTP is used for film deposition. Use of EVD + LTP also increases thermal stability of the films. Contact angle of the films corresponds to the bulk PTFE. The PTFE molecules oriented are preferentially in perpendicular direction to the substrate surface. KW - deposition in vacuum KW - multiphase structure formation KW - optical property KW - plasma KW - polytetrafluoroethylene thin film Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-17587 VL - 308 IS - 6 PB - Wiley ER - TY - CHAP A1 - Steglich, Patrick A1 - Mai, Christian A1 - Stolarek, David A1 - Lischke, Stefan A1 - Kupijai, Sebastian A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Heinrich, Friedhelm A1 - Bauer, Joachim A1 - Meister, Stefan A1 - Knoll, Dieter A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Partially slotted silicon ring resonator covered with electro-optical polymer T2 - Proceedings of SPIE N2 - In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13771 SN - 1996-756X ER - TY - CHAP A1 - Fursenko, Oksana A1 - Lukosius, Mindaugas A1 - Lupina, G. A1 - Bauer, Joachim A1 - Villringer, Claus A1 - Mai, Andreas T1 - Development of graphene process control by industrial optical spectroscopy setup N2 - The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots (~ 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated. This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility. KW - graphene KW - spectroscopic ellipsometry KW - optical constant KW - reflectometry KW - optical metrology KW - AFM KW - Raman spectroscopy Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15319 SP - 250 EP - 259 PB - SPIE ER - TY - CHAP A1 - Buchmann, Jens A1 - Zhang, Edward A1 - Scharfenorth, Chris A1 - Spannekrebs, Bastian A1 - Villringer, Claus A1 - Laufer, Jan T1 - Evaluation of Fabry-Perot polymer film sensors made using hard dielectric mirror deposition N2 - Fabry-Perot (FP) polymer film sensors offer high acoustic sensitivity, small element sizes, broadband frequency response and optical transmission to enable high resolution, backward mode photoacoustic (PA) imaging. Typical approaches to sensor fabrication involve the deposition of stacks of alternating dielectric materials to form interferometer mirrors, which are separated by a polymer spacer. If hygroscopic soft dielectric materials are used, a protective polymer layer is typically required. In this study, methods for the deposition of water-resistant, hard dielectric materials onto polymers were explored to improve the robustness and performance of the sensors. This involved the optimisation of the fabrication process, the optical and acoustic characterisation of the sensors, and a comparison of the frequency response with the output of an acoustic forward model. The mirrors, which were separated by a 20 μm Parylene spacer, consisted of eight double layers of Ta2O5 and SiO2 deposited onto polymer substrates using temperature-optimised electron vapour deposition. The free spectral range of the interferometer was 32 nm, its finesse FR = 91, and its visibility V = 0.72. The noise-equivalent pressure was 0.3 kPa (20 MHz bandwidth). The measured frequency response was found to be more resonant at 25 MHz compared to sensors with soft dielectric mirrors, which was also in good agreement with the output of a forward model of the sensor. The sensors were used in a PA scanner to acquire 3-D images in tissue phantoms. KW - Fabry-Perot KW - ultrasound KW - photoacoustic KW - imaging KW - sensor Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15289 SP - 920 EP - 928 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Bauer, Joachim A1 - Burger, Martin A1 - Franz, M. A1 - Grieshober, K. A1 - Wirth, F. A1 - Blondeau, J. A1 - Rautenberg, J. A1 - Mouti, S. A1 - Schrader, Sigurd T1 - Triangulation-based 3D surveying borescope N2 - In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations. KW - borescope KW - 3D measurement KW - triangulation KW - lens design KW - calibration KW - defect Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15307 SP - 51 EP - 56 PB - SPIE ER - TY - JOUR A1 - Fursenko, Oksana A1 - Lukosius, Mindaugas A1 - Bauer, Joachim A1 - Villringer, Claus A1 - Lux, Helge A1 - Bärwolf, Florian A1 - Lisker, Marco A1 - Mai, Andreas T1 - Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry JF - Journal of Vacuum Science & Technology B N2 - Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diagnostic of graphene was performed by a fast and nondestructive metrology method based on the combination of spectroscopic ellipsometry and reflectometry (SE/R), realized within a wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of a multilayer film stack, including graphene, interface layer GeOx underneath graphene, and surface roughness is developed and applied for process control. The authors found a relationship between the quality of graphene and the growth of GeOx beneath graphene. Enhanced oxidation of Ge beneath graphene was registered as a long-term process. SE/R measurements were validated and complemented using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry. This comparative study shows a high potential for optical metrology of graphene deposited on Ge/Si structures, due to its great sensitivity, repeatability, and flexibility, realized in a nondestructive way. Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-16083 VL - 37 IS - 6 PB - American Vacuum Society (AVS) ER - TY - CHAP A1 - Pulwer, Silvio A1 - Jahns, Daniel A1 - Villringer, Claus A1 - Schrader, Sigurd T1 - Dynamic pattern generation by singlemode fibers for endoscopic 3D measurement systems N2 - This work presents experimental and simulation results of a 3D measurement concept based on fiber-optic interference pattern generation. A demonstrator system which is able to adjust different optical and mechanical parameters is described. The results of parameter variation studies are discussed along with possible applications in the field of micro-optical 3D measurement systems like endoscopes. The experiments were prepared with different structures with various scattering properties. To implement that approach into a micro-optical 3D measurement system, the combination of distance variation between the fibers and a controlled phase shift introduced by a retarder can be used to design the system versatile. KW - endoscope KW - 3D measurement KW - phase shift KW - fiber Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15364 PB - SPIE ER - TY - CHAP A1 - Gilani, Taravat Saeb A1 - Villringer, Claus A1 - Zhang, Edward A1 - Gundlach, H. A1 - Buchmann, Jens A1 - Schrader, Sigurd A1 - Laufer, Jan T1 - Parallelised photoacoustic signal acquisition using a Fabry-Perot sensor and a camera-based interrogation scheme N2 - Tomographic photoacoustic (PA) images acquired using a Fabry-Perot (FP) based scanner offer high resolution and image fidelity but can result in long acquisition times due to the need for raster scanning. To reduce the acquisition times, a parallelised camera-based PA signal detection scheme is developed. The scheme is based on using a sCMOScamera and FPI sensors with high homogeneity of optical thickness. PA signals were acquired using the camera-based setup and the signal to noise ratio (SNR) was measured. A comparison of the SNR of PA signal detected using 1) a photodiode in a conventional raster scanning detection scheme and 2) a sCMOS camera in parallelised detection scheme is made. The results show that the parallelised interrogation scheme has the potential to provide high speed PA imaging. KW - photoacoustic imaging KW - parallelised signal acquisition KW - Fabry-Perot polymer film sensor Y1 - 2018 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15335 SP - 217 EP - 222 PB - SPIE ER - TY - CHAP A1 - Kirchner, Thomas A1 - Villringer, Claus A1 - Gutke, Marko A1 - Laufer, Jan T1 - Plano-concave optical sensor for transcranial photoacoustic measurements T2 - Opto-Acoustic Methods and Applications in Biophotonics VI N2 - Biomedical photoacoustics is usually used to image absorption-based contrast in soft tissues up to depths of several centimeters and with sub-millimeter resolution. By contrast, measuring Photoacoustic (PA) signals through hard bone tissue shows severe signal degradation due to aberration and high attenuation of high frequency acoustic signal components. This is particularly noticeable when measuring through thicker, human, skull bone. Which is the main reason why transcranial PA imaging in humans has so far proved challenging to implement. To tackle this challenge, we developed an optical resonator sensor based on a previous planar-concave design. This sensor was found to be highly suitable for measuring the low-pressure amplitude and low acoustic frequency signals that are transmitted through human cranial bone. A plano-concave optical resonator sensor was fabricated to provide high sensitivity in the acoustic frequency range of DC to around 2 MHz, a low noise equivalent pressure and a small active element size enabling it to significantly outperform conventional piezoelectric transducers when measuring PA waves transmitted through ex vivo human cranial bones. KW - transcranial KW - ex vivo KW - human KW - brain KW - optical resonator KW - photoacoustic KW - optoacoustic Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-17840 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Sievers, Jan A1 - Villringer, Claus A1 - Lebek, Werner A1 - Gilani, Taravat Saeb A1 - Laufer, Jan T1 - Photoacoustic tomography using a Fabry-Perot sensor with homogeneous optical thickness and wide-field camera-based detection T2 - Opto-Acoustic Methods and Applications in Biophotonics VI N2 - Fabry-Perot (FP) sensors are typically read out using a raster scan to acquire tomographic Photoacoustic (PA) images. To speed up the recording time, wide-field illumination of the sensor in combination with a camera as detector can be used. In this study, an sCMOS camera and wavelengths around 517 nm are used to interrogate a FP sensor with a homogeneous optical thickness over a 4 cm2 aperture. The recorded time series show PA signals are acquired over the entire area of the interrogation beam. The performance of the system, such as the noise equivalent pressure, is evaluated. KW - photoacoustic tomograph KW - Fabry-Perot sensor KW - camera-based setup KW - photopolymer KW - polyvinyl cinnamate KW - interferometer transfer function KW - acoustic sensitivity KW - detection aperture Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-17850 ER - TY - CHAP A1 - Lebek, Werner A1 - Heyroth, Frank A1 - Syrowatka, Frank A1 - Villringer, Claus A1 - Goerlitz, Sylvia A1 - Laufer, Jan T1 - Evaluation of fabrication methods for Fabry-Perot polymer film ultrasound sensors T2 - Opto-Acoustic Methods and Applications in Biophotonics VI N2 - Fabry-Pèrot (FP) interferometer sensors enable highly sensitive backward mode acoustic detection in Photoacoustic (PA) imaging. They are transparent to the excitation wavelength, can be placed directly next to the PA source, and offer a broadband frequency response and high acoustic sensitivity. PA tomography using parallelized detection requires high spatial uniformity of the optical and acoustic properties, which can be hampered by contaminations during fabrication that lead to the formation of inhomogeneities and artefacts. The quality and homogeneity of the dielectric and polymer layers have a direct effect on the maximum optical phase sensitivity, and hence acoustic sensitivity. In this study, cross-sectional images of FP sensors were obtained using focused ion beam milling and ultramicrotomy followed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) to evaluate different fabrication methods. KW - photoacoustic imaging KW - Fabry-Perot sensor KW - parylene-C KW - cocus ion beam KW - electron microscopy Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-17864 ER - TY - CHAP A1 - Villringer, Claus A1 - Gilani, Taravat Saeb A1 - Zhang, Edward A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Schrader, Sigurd A1 - Laufer, Jan T1 - Development of tuneable Fabry-Pérot sensors for parallelised photoacoustic signal acquisition T2 - Proc. SPIE 10878, Photons Plus Ultrasound: Imaging and Sensing 2019, 108780M (8 March 2019) N2 - Fabry-Pérot (FP) sensors have enabled high resolution 3D photoacoustic (PA) imaging in backward mode. However, raster-scanning of the interrogation laser beam across the sensor can result in slow 3D image acquisition. To overcome this limitation, parallelized PA signal acquisition can be used for which FP sensors with uniform optical thickness are required. In this work, the optical thickness is tuned a) irreversibly through the use of a photopolymer host matrix and b) actively using embedded electro-optic (EO) chromophores. Polymer spacers (5 μm) were deposited using spin coating and sandwiched between two dielectric mirrors and transparent ITO electrodes. The employed polymer guest-host system consists of an EO chromophore (2-methyl-4-nitroaniline) and poly(vinyl cinnamate). EO tuneability was induced using contact poling and a tuneability of 68 pm was demonstrated. The optical thickness was homogenised by raster scanning a UV beam whilst varying the exposure time across a 4 mm2 detection aperture. Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13769 SN - 1996-756X PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Fursenko, Oksana A1 - Marschmeyer, Steffen A1 - Bluemich, Adrian A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Mai, Andreas A1 - Schrader, Sigurd T1 - Very high aspect ratio through silicon via reflectometry T2 - Proceedings of SPIE N2 - Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup. Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13758 SN - 1996-756X ER - TY - JOUR A1 - Klingsporn, M. A1 - Kirner, S. A1 - Villringer, Claus A1 - Abou-Ras, D. A1 - Costina, Ioan A1 - Lehmann, M. A1 - Stannowski, Bernd T1 - Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells JF - Journal of Applied Physics N2 - Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-9727 SN - 1089-7550 VL - 119 IS - 22 ER - TY - JOUR A1 - Ksianzou, Viachaslau A1 - Villringer, Claus A1 - Grytsenko, Kostyantyn A1 - Pekur, Demyd A1 - Lytvyn, Peter A1 - Sopinskyy, Mykola A1 - Lebedyeva, Iryna A1 - Niemczyk, Agata A1 - Baranowska, Jolanta T1 - Structural and Optical Anomalies in Thin Films Grown in a Magnetic Field by Electron-Assisted Vacuum Deposition of PTFE JF - Macromolecular Materials and Engineering N2 - Polytetrafluoroethylene (PTFE) films are deposited in parallel and perpendicular magnetic fields (MF) by electron-enhanced vacuum deposition (EVD) and EVD + low-temperature plasma (LTP) methods. The structure, morphology, and nanomechanical properties of the films are studied by infrared spectroscopy (IRS), atomic force microscopy (AFM), and spectroscopic ellipsometry. The structure of the thicker films is closer to that of bulk PTFE than that of thin films. The films' crystallinity and surface roughness are higher than those deposited without MF. The birefringence of the refractive index (n) of the films deposited in the MF is inverse to the anisotropy of the n of the films deposited without MF. The hardness of the films is close to that of bulk PTFE. KW - birefringence KW - deposition in vacuum KW - morphology KW - plasma KW - thin polytetrafluoroethylene film Y1 - 2025 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-19712 VL - 310 IS - 3 PB - Wiley ER - TY - GEN A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Advanced Nanophotonics: Silicon-Organic Hybrid Technology T2 - Wissenschaftliche Beiträge 2016 N2 - Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer. N2 - Integrierte photonische Bauelemente werden in der Forschung immer bedeutender. Besonders die Siliziumphotonik ist für verschiedene optische Anwendungen sehr attraktiv. Die Verwendung von Silizium-auf-Isolator-Materialsystemen bietet die Möglichkeit, photonische Bauelemente mit elektronischen Geräten auf einem einzelnen Chip zu entwickeln. Durch erhebliche Forschungsinvestitionen hat die photonische Integration auf Silizium-auf-Isolator-Substraten einen Reifegrad, der bereits Industriemaßstäben genügt. Jedoch hat Silizium keinen linearen elektrooptischen Effekt und damit sind moderne Modulationsformate nur schwierig zu realisieren. Daher wird seit eingen Jahren ein neuer Ansatz, die Silizium-Organik Hybridtechnologie, verfolgt. Diese Technologie ist eine tragfähige Ausdehnung des Silizium-auf-Isolator-Materialsystems für eine effiziente Hochgeschwindigkeitsmodulation und optische Signalverarbeitung. In diesem Artikel präsentieren wir unsere theoretischen und experimentellen Untersuchungen zu einem Silizium-Organik Hybrid Ringresonator. Das Design und die Herstellung des neuartigen nanophotonischen Bauelements werden im Detail beschrieben. Der demonstrierte Ringresonator kombiniert die Vorteile zweier verschiedener Wellenleiterarten in einem einzelnen Ring, dem verlustarmen Kanal-Wellenleiter und dem Silizium-organischen Hybridschlitzwellenleiter. Wir demonstrieren erstmals ein Transmissionsspektrum eines solchen Ringresonators, der mit einem elektro-optischen Polymer beschichtet ist. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-5337 SN - 0949-8214 VL - 20 SP - 45 EP - 48 ER - TY - JOUR A1 - Baumann, Elisabeth A1 - Pohle, Ulrike A1 - Zhang, Edward A1 - Allen, Thomas A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Gerhardt, Holger A1 - Laufer, Jan T1 - A backward-mode optical-resolution photoacoustic microscope for 3D imaging using a planar Fabry-Pérot sensor JF - Photoacoustics N2 - Optical-resolution photoacoustic microscopy (OR-PAM) combines high spatial resolution and strong absorption-based contrast in tissue, which has enabled structural and spectroscopic imaging of endogenous chromophores, primarily hemoglobin. Conventional piezoelectric ultrasound transducers are typically placed far away from the photoacoustic source due to their opacity, which reduces acoustic sensitivity. Optical ultrasound sensors are an alternative as their transparency allows them to be positioned close to the sample with minimal source-detector distances. In this work, a backward-mode OR-PAM system based on a planar Fabry-Pérot ultrasound sensor and coaxially aligned excitation and interrogation beams was developed. Two 3D imaging modes, using raster-scanning for enhanced image quality and continuous-scanning for fast imaging, were implemented and tested on a leaf skeleton phantom. In fast imaging mode, a scan-rate of 100,000 A-lines/s was achieved. 3D images of a zebrafish embryo were acquired in vivo in raster-scanning mode. The transparency of the FP sensor in the visible and near-infrared wavelength region makes it suitable for combined functional and molecular imaging applications using OR-PAM and multi-photon fluorescence microscopy. KW - optical-resolution photoacoustic microscopy KW - backward-mode imaging KW - dual-wavelength KW - continuous scanning KW - in vivo imaging KW - optical ultrasound sensing KW - planar Fabry-Pérot interferometer Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-14701 SN - 2213-5979 VL - 24 SP - 100293 PB - Elsevier ER - TY - CHAP A1 - Pohle, Ulrike A1 - Baumann, Elisabeth A1 - Pulwer, Silvio A1 - Villringer, Claus A1 - Zhang, Edward A1 - Gerhardt, Holger A1 - Laufer, Jan T1 - Development of a backward-mode photoacoustic microscope using a Fabry-Pérot sensor N2 - Optical-resolution photoacoustic microscopy (PAM) has been shown to enable the acquisition of high resolution (μm) functional and anatomical images. For backward-mode operation, conventional piezoelectric ultrasound transducers need to be placed far away from the signal source due to their opacity and size. This can result in reduced acoustic sensitivity. Planar Fabry-Perot polymer film interferometer (FPI) sensors have the potential to overcome this limitation since they are transparent to the excitation wavelength, can be placed immediately adjacent to the signal source for high acoustic sensitivity, and offer a broadband frequency response (0 –50 MHz). In this study, we present a high frame rate, backward-mode OR-PAM system based on a planar FPI ultrasound sensor. A ns-pulsed laser provides excitation pulses (<200 nJ, maximum pulse repetition frequency = 200 kHz, 532 nm) to generate photoacoustic waves that are detected using a planar FPI sensor interrogated at 765-781 nm. For backwardmode operation and highest acoustic sensitivity, the excitation and interrogation beams are coaxially aligned and rasterscanned. The optical transfer function of the sensor, the spatial resolution and the detection sensitivity were determined to characterise the set-up. Images of a leaf phantom and first in vivo images of zebrafish larvae were acquired. This approach will enable fast 3D OR-PAM with high resolution and high sensitivity for functional and molecular imaging applications. FPI-based ultrasound detection also has the potential to enable dual-mode optical- and acousticresolution PAM and the integration of photoacoustic imaging with purely optical modalities such as multi-photon microscopy. KW - optical-resolution photoacoustic microscopy KW - Fabry-Perot ultrasound sensor KW - in vivo imaging Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15349 SP - 594 EP - 598 PB - SPIE ER - TY - CHAP A1 - Pulwer, Silvio A1 - Fiebelkorn, Richard A1 - Zesch, Christoph A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Villasmunta, Francesco A1 - Gedat, Egbert A1 - Handrich, Jan A1 - Schrader, Sigurd A1 - Vandenhouten, Ralf T1 - Endoscopic orientation by multimodal data fusion T2 - Proc. SPIE 10931, MOEMS and Miniaturized Systems XVIII N2 - To improve the feasibility of endoscopic inspection processes we developed a system that provides online information about position, orientation and viewing direction of endoscopes, to support the analysis of endoscopic images and to ease the operational handling of the equipment. The setup is based on an industrial endoscope consisting of a camera, various MEMS and multimodal data fusion. The software contains algorithms for feature and geometric structure recognition as well as Kalman filters. To track the distal end of the endoscope and to generate 3D point cloud data in real time the optical and photometrical characteristics of the system are registered and the movement of the endoscope is reconstructed by using image processing techniques. KW - endoscope KW - orientation KW - Kalman filter KW - visual odometry KW - mems KW - gyroscope KW - accelerometer Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-11420 SN - 1996-756X ER - TY - JOUR A1 - Steglich, Patrick A1 - Mai, Christian A1 - Villringer, Claus A1 - Dietzel, Birgit A1 - Bondarenko, Siegfried A1 - Ksianzou, Viachaslau A1 - Villasmunta, Francesco A1 - Zesch, Christoph A1 - Pulwer, Silvio A1 - Burger, Martin A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Schrader, Sigurd A1 - Vitale, Francesco A1 - De Matteis, Fabio A1 - Prosposito, Paolo A1 - Casalboni, Mauro A1 - Mai, Andreas T1 - Silicon-organic hybrid photonics: an overview of recent advances, electro-optical effects and CMOS integration concepts JF - Journal of Physics: Photonics N2 - In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given. Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13882 SN - 2515-7647 VL - 3 IS - 2 ER - TY - CHAP A1 - Villasmunta, Francesco A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Schrader, Sigurd A1 - Schenk, Harald A1 - Mai, Andreas A1 - Regehly, Martin ED - Chen, Ray T. ED - Schröder, Henning T1 - Design, fabrication, and characterization of integrated optical through-silicon waveguides for 3D photonic interconnections T2 - Optical Interconnects XXIV N2 - In the context of an ever-growing volume of data generated by established and emerging technologies, such as 5G, the Internet of Things, artificial intelligence, machine learning, blockchain, and virtual reality, faster communication speed is demanded by data centers and high-performance computing. Transceiver requirements surged from 100 to 400 Gb/s and beyond. In this scenario, photonics aims to enable Tb/s optical communication at energies below 1 pJ/bit. Targeting higher communication rates while maintaining a low power budget can significantly benefit from 3D photonic chip architectures. This paper presents the simulation-based design, fabrication, and characterization of a monolithically integrated optical through-silicon waveguide that facilitates the connection between different surfaces of a silicon chip. Deep reactive ion etching was employed in both the Bosch and Cryogenic variants to evaluate the effect of sidewall roughness on propagation losses. The mechanical stability of the waveguide was ensured by interrupting the annular trench with a bridging structure. The high-refractive-index contrast to air provides tight light confinement for a core size of up to 50 μm and multimode operation at 1550 nm. The morphology was characterized using scanning electron microscopy (SEM), and optical transmission characterization was performed using relative power loss measurements. A tunable laser source was buttcoupled to a waveguide to analyze light transmission efficiency. Preliminary measurements using single-mode fiber show that the transmitted values exceeded 99% for all structures. KW - multimode photonics KW - cryogenic etching KW - ICP-DRIE KW - optical interconnects KW - silicon photonics KW - 3D chip stacking Y1 - 2024 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-19759 VL - 12892 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - JOUR A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Villasmunta, Francesco A1 - Villringer, Claus A1 - Reck, Johanna A1 - Peters, Sven A1 - Treffer, Alexander A1 - Kuhnt, Christian A1 - Marschmeyer, Steffen A1 - Fursenko, Oksana A1 - Stolarek, David A1 - Mai, Andreas A1 - Regehly, Martin T1 - Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration JF - Optics Express N2 - A significant aspect of fabricating 3D chip architectures is ensuring proper contact between the different layers of the chip, which often requires removing the underside of isolation layers before filling vias with conductive material. Currently, scanning electron microscopy is the established method for investigating such structures. In this paper, we propose a rapid, non-destructive optical analysis technique for the simultaneous measurement of through-silicon vias (TSV) depths, silicon wafer thickness, and residual oxide thickness. The proposed method utilizes Fourier peak shift analysis (FPSA) of reflectance measurements in the near-infrared (1200 nm—2200 nm) spectral regions. The application of FPSA to representative samples taken from a commercial TSV integration process for MEMS and CMOS fabrication demonstrated good agreement with reference scanning electron microscopy measurements, confirming the feasibility of the method for in-line and in-situ metrology. The results indicate that FPSA has great potential for real-time process monitoring and control during 3D chip manufacturing. KW - effective refractive index KW - Fourier transforms KW - near infrared KW - ray tracing KW - scanning electron microscopy KW - thin film Y1 - 2025 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-20633 VL - 33 IS - 15 SP - 32175 EP - 32189 PB - Optica ER - TY - JOUR A1 - Bauer, Joachim A1 - Fursenko, Oksana A1 - Marschmeyer, Steffen A1 - Heinrich, Friedhelm A1 - Villasmunta, Francesco A1 - Villringer, Claus A1 - Zesch, Christoph A1 - Schrader, Sigurd T1 - Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process JF - Journal of Vacuum Science & Technology B N2 - Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed. Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-16093 VL - 37 IS - 6 PB - American Vacuum Society (AVS) ER - TY - GEN A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Dietzel, Birgit A1 - Ksianzou, Viachaslau A1 - Schrader, Sigurd T1 - Chip-integrierte photonische Bauelemente T2 - Wissenschaftliche Beiträge 2017 N2 - In unserer hochtechnologisierten Gesellschaft spielt die optische Datenübertragung aufgrund der stetig wachsenden Informationsvielfalt eine immer bedeutendere Rolle. In den Anfängen der Nachrichtentechnik waren Datenraten von wenigen bit/s realisierbar. Heute werden mittels optischer Technologien Übertragungsraten von mehreren Gbit/s umgesetzt. Möglich wird dies durch neue Entwicklungen in der Chip-integrierten Photonik. Beispiele dafür sind Chip-integrierte elektrooptische Modulatoren und Schalter. In diesem Artikel werden neue Entwicklungen in der Chip-integrierten Photonik diskutiert und die experimentelle Charakterisierung der Bauelemente in Form eines Ringresonators beschrieben. Für die Experimente wird exemplarisch ein photonisches Bauelement genutzt, das aus einem hybriden Silizium-Polymer-Materialsystem besteht. Die Ergebnisse zeigen, dass diese Materialkombination vielversprechend für zukünftige Chip-integrierte photonische Bauelemente mit extrem geringem Energiebedarf ist. N2 - The focus on high-tech in our society makes optical data transmission increasingly important due to the continually growing diversity of information. At the very beginning of integrated photonics, the data rates achieved were only a few bit/s. Today, transfer rates of several Gbit/s are possible due to novel chip-integrated devices such as electro-optical modulators and switches. This trend was made possible due to new developments in the field of Chip-integrated photonics. In this article, we discuss latest developments in the field of chip-integrated photonic devices and describe their experimental characterization. The experimental setup is developed and described in detail. The example used in our experiments is a hybrid silicon-polymer material system. Our results show that the hybrid material approach is a promising candidate for future on-chip integrated photonic devices with low power consumption. Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-9426 SN - 0949-8214 VL - 21 SP - 55 EP - 59 ER - TY - GEN A1 - Steglich, Patrick A1 - Ksianzou, Viachaslau A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Schrader, Sigurd T1 - Theorie der Modenlinienspektroskopie zur optischen Charakterisierung von Polymerschichten T2 - Wissenschaftliche Beiträge 2018 N2 - Die Modenlinienspektroskopie kann zur hochpräzisen Charakterisierung von Polymerschichten bezüglich des Brechungsindex verwendet werden. Das vorliegende Manuskript behandelt die Theorie der Modenlinienspektroskopie und beginnt dabei mit den theoretischen Grundlagen eines planaren Wellenleiters, die zum Verständnis der Modenlinienspektroskopie notwendig sind. Die hier präsentierten expliziten Herleitungen können genutzt werden, um die Modenlinienspektroskopie so zu modifizieren, dass auch die Messung des Pockelseffektes möglich ist. Eine Anwendungsmöglichkeit soll in der zukünftigen Bestimmung des Pockelskoeffizienten bestehen, der für die Weiterentwicklung von polymerbasierten elektrooptischen Modulatoren benötigt wird. Zudem werden der Aufbau und die experimentelle Herangehensweisen beschrieben und die Brechungsindexbestimmung wird exemplarisch am Beispiel einer Wirt-Gast-Polymerschicht demonstriert. N2 - M-Line spectroscopy can be used for high precision measurements of polymer layers. The present manuscript deals with the theory of m-line spectroscopy and thus begins with the theoretical background of a planar waveguide structure, which is necessary for a deeper understanding of m-line spectroscopy. The explicit derivations presented here can be used to modify the m-line spectroscopy in such a way that the measurement of the Pockels effect is also possible. One application is to be obtained in the future configuration of the Pockels coefficients, which is needed to optimize electro-optical modulators. In addition, the set-up and the experimental approach are described. Finally, a host-guest polymer layer is experimentally characterized in terms of the refractive index. Y1 - 2018 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-10248 SN - 0949-8214 VL - 22 SP - 31 EP - 38 ER - TY - JOUR A1 - Steglich, Patrick A1 - Mai, Christian A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Casalboni, Mauro A1 - Schrader, Sigurd A1 - Mai, Andreas T1 - Quadratic electro-optic effect in silicon-organic hybrid slot-waveguides JF - Optics Letters N2 - This Letter reports on the quadratic electro-optic effect of polymers, observed in a silicon slot-waveguide at low voltages. We demonstrate that in narrow slots, the electro-optic response with respect to refractive index change is strong enough for on-chip wavelength tuning and intensity modulation using voltages as low as 1 V. A silicon slot-waveguide embedded by a nonlinear optical polymer, consisting of the dye Disperse Red 1 in poly(methyl methacrylate), serves as the phase shifter in a racetrack ring resonator. As deduced from the experimental data, the third-order susceptibility of the utilized electro-optic polymer is about 2·10−19 m2/V2. The demonstrated low-voltage operation and inherently thermal stability show the potential for silicon-organic hybrid devices using the quadratic electro-optic effect. Y1 - 2018 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-12148 SN - 1539-4794 VL - 43 IS - 15 ER -