TY - JOUR A1 - Steglich, Patrick A1 - Mai, Christian A1 - Villringer, Claus A1 - Dietzel, Birgit A1 - Bondarenko, Siegfried A1 - Ksianzou, Viachaslau A1 - Villasmunta, Francesco A1 - Zesch, Christoph A1 - Pulwer, Silvio A1 - Burger, Martin A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Schrader, Sigurd A1 - Vitale, Francesco A1 - De Matteis, Fabio A1 - Prosposito, Paolo A1 - Casalboni, Mauro A1 - Mai, Andreas T1 - Silicon-organic hybrid photonics: an overview of recent advances, electro-optical effects and CMOS integration concepts JF - Journal of Physics: Photonics N2 - In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given. Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13882 SN - 2515-7647 VL - 3 IS - 2 ER - TY - CHAP A1 - Pulwer, Silvio A1 - Fiebelkorn, Richard A1 - Zesch, Christoph A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Villasmunta, Francesco A1 - Gedat, Egbert A1 - Handrich, Jan A1 - Schrader, Sigurd A1 - Vandenhouten, Ralf T1 - Endoscopic orientation by multimodal data fusion T2 - Proc. SPIE 10931, MOEMS and Miniaturized Systems XVIII N2 - To improve the feasibility of endoscopic inspection processes we developed a system that provides online information about position, orientation and viewing direction of endoscopes, to support the analysis of endoscopic images and to ease the operational handling of the equipment. The setup is based on an industrial endoscope consisting of a camera, various MEMS and multimodal data fusion. The software contains algorithms for feature and geometric structure recognition as well as Kalman filters. To track the distal end of the endoscope and to generate 3D point cloud data in real time the optical and photometrical characteristics of the system are registered and the movement of the endoscope is reconstructed by using image processing techniques. KW - endoscope KW - orientation KW - Kalman filter KW - visual odometry KW - mems KW - gyroscope KW - accelerometer Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-11420 SN - 1996-756X ER - TY - JOUR A1 - Bauer, Joachim A1 - Fursenko, Oksana A1 - Marschmeyer, Steffen A1 - Heinrich, Friedhelm A1 - Villasmunta, Francesco A1 - Villringer, Claus A1 - Zesch, Christoph A1 - Schrader, Sigurd T1 - Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process JF - Journal of Vacuum Science & Technology B N2 - Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed. Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-16093 VL - 37 IS - 6 PB - American Vacuum Society (AVS) ER -