TY - JOUR A1 - Bauer, Joachim A1 - Fursenko, Oksana A1 - Heinrich, Friedhelm A1 - Gutke, Marko A1 - Kornejew, Eckhart A1 - Brödel, Oliver A1 - Dietzel, Birgit A1 - Kaltenbach, Alexander A1 - Burkhardt, Martin A1 - Edling, Matthias A1 - Steglich, Patrick A1 - Herzog, Michael A1 - Schrader, Sigurd T1 - Determination of optical constants and scattering properties of transparent polymers for use in optoelectronics JF - Optical Materials Express N2 - Knowledge of optical constants, i.e. refractive index n and extinction coefficient k, and light scattering properties of optical polymers are required to optimize micro-optics for light-emitting diodes in terms of efficiency, color properties and light distribution. We present here a model-based diagnostic approach to determine the optical properties of polymers, which should be particularly useful in the development of plastics for optical applications. Optical constants and scattering coefficients were obtained from transmission and reflection measurements in a wavelength range from UV to NIR taking into account scattering effects due to rough surfaces and volume inhomogeneity. Based on the models for the dielectric function, the molecular optical transition energies Eg, critical point energies, Urbach energies and exciton transition energies were determined. Rayleigh and Mie scattering model and van de Hulst's anomalous diffraction theory were applied to characterize scattering due to volume inhomogeneities. Scalar diffraction theory was applied to account for surface roughness scattering. Atomic force microscopy with nanomechanical characterization was used to characterize domains in size and shape and to assign optical scattering to a suitable morphological model. The combined optical and mechanical characterization help to improve the qualification of new polymer materials for optical applications. KW - diffraction theory KW - light property KW - optical constant KW - optical material KW - optical property KW - scattering theory Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15666 VL - 12 IS - 1 SP - 204 EP - 224 PB - Optica Publishing Group ER - TY - CHAP A1 - Steglich, Patrick A1 - Mai, Christian A1 - Stolarek, David A1 - Lischke, Stefan A1 - Kupijai, Sebastian A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Heinrich, Friedhelm A1 - Bauer, Joachim A1 - Meister, Stefan A1 - Knoll, Dieter A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Partially slotted silicon ring resonator covered with electro-optical polymer T2 - Proceedings of SPIE N2 - In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13771 SN - 1996-756X ER - TY - CHAP A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Bauer, Joachim A1 - Burger, Martin A1 - Franz, M. A1 - Grieshober, K. A1 - Wirth, F. A1 - Blondeau, J. A1 - Rautenberg, J. A1 - Mouti, S. A1 - Schrader, Sigurd T1 - Triangulation-based 3D surveying borescope N2 - In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations. KW - borescope KW - 3D measurement KW - triangulation KW - lens design KW - calibration KW - defect Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15307 SP - 51 EP - 56 PB - SPIE ER - TY - CHAP A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Fursenko, Oksana A1 - Marschmeyer, Steffen A1 - Bluemich, Adrian A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Mai, Andreas A1 - Schrader, Sigurd T1 - Very high aspect ratio through silicon via reflectometry T2 - Proceedings of SPIE N2 - Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup. Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13758 SN - 1996-756X ER - TY - JOUR A1 - Bauer, Joachim A1 - Gutke, Marko A1 - Heinrich, Friedhelm A1 - Edling, Matthias A1 - Stoycheva, Vesela A1 - Kaltenbach, Alexander A1 - Burkhardt, Martin A1 - Gruenefeld, Martin A1 - Gamp, Matthias A1 - Gerhard, Christoph A1 - Steglich, Patrick A1 - Steffen, Sebastian A1 - Herzog, Michael A1 - Dreyer, Christian A1 - Schrader, Sigurd T1 - Novel UV-transparent 2-component polyurethane resin for chip-on-board LED micro lenses JF - Optical Materials Express N2 - In this work we present a novel optical polymer system based on polyurethane elastomer components, which combines excellent UV transparency with high thermal stability, good hardness, high surface tension and long pot life. The material looks very promising for encapsulation and microlensing applications for chip-on-board (CoB) light-emitting diodes (LED). The extinction coefficient k, refractive index n, and bandgap parameters were derived from transmission and reflection measurements in a wavelength range of 200-890 nm. Thermogravimetry and differential scanning calorimetry were used to provide glass transition and degradation temperatures. The surface tension was determined by means of contact angle measurements. As proof of concept, a commercial InGaN-CoB-LED is used to demonstrate the suitability of the new material for the production of microlenses. Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13472 SN - 2159-3930 VL - 10 IS - 9 SP - 2085 EP - 2099 ER - TY - GEN A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Advanced Nanophotonics: Silicon-Organic Hybrid Technology T2 - Wissenschaftliche Beiträge 2016 N2 - Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer. N2 - Integrierte photonische Bauelemente werden in der Forschung immer bedeutender. Besonders die Siliziumphotonik ist für verschiedene optische Anwendungen sehr attraktiv. Die Verwendung von Silizium-auf-Isolator-Materialsystemen bietet die Möglichkeit, photonische Bauelemente mit elektronischen Geräten auf einem einzelnen Chip zu entwickeln. Durch erhebliche Forschungsinvestitionen hat die photonische Integration auf Silizium-auf-Isolator-Substraten einen Reifegrad, der bereits Industriemaßstäben genügt. Jedoch hat Silizium keinen linearen elektrooptischen Effekt und damit sind moderne Modulationsformate nur schwierig zu realisieren. Daher wird seit eingen Jahren ein neuer Ansatz, die Silizium-Organik Hybridtechnologie, verfolgt. Diese Technologie ist eine tragfähige Ausdehnung des Silizium-auf-Isolator-Materialsystems für eine effiziente Hochgeschwindigkeitsmodulation und optische Signalverarbeitung. In diesem Artikel präsentieren wir unsere theoretischen und experimentellen Untersuchungen zu einem Silizium-Organik Hybrid Ringresonator. Das Design und die Herstellung des neuartigen nanophotonischen Bauelements werden im Detail beschrieben. Der demonstrierte Ringresonator kombiniert die Vorteile zweier verschiedener Wellenleiterarten in einem einzelnen Ring, dem verlustarmen Kanal-Wellenleiter und dem Silizium-organischen Hybridschlitzwellenleiter. Wir demonstrieren erstmals ein Transmissionsspektrum eines solchen Ringresonators, der mit einem elektro-optischen Polymer beschichtet ist. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-5337 SN - 0949-8214 VL - 20 SP - 45 EP - 48 ER - TY - JOUR A1 - Steglich, Patrick A1 - Mai, Christian A1 - Villringer, Claus A1 - Dietzel, Birgit A1 - Bondarenko, Siegfried A1 - Ksianzou, Viachaslau A1 - Villasmunta, Francesco A1 - Zesch, Christoph A1 - Pulwer, Silvio A1 - Burger, Martin A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Schrader, Sigurd A1 - Vitale, Francesco A1 - De Matteis, Fabio A1 - Prosposito, Paolo A1 - Casalboni, Mauro A1 - Mai, Andreas T1 - Silicon-organic hybrid photonics: an overview of recent advances, electro-optical effects and CMOS integration concepts JF - Journal of Physics: Photonics N2 - In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given. Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13882 SN - 2515-7647 VL - 3 IS - 2 ER -