TY - CHAP A1 - Geisler, Sebastian A1 - Bauer, Joachim A1 - Haak, Ulrich A1 - Jagdhold, Ulrich A. A1 - Pliquett, R. A1 - Matthus, E. A1 - Schrader, R. A1 - Wolf, H. A1 - Baetz, U. A1 - Beyer, Harald A1 - Niehoff, Martin T1 - Optical proximity correction for 0.13 um SiGe:C BiCMOS N2 - We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells. KW - optical proximity correction KW - 0.13µm SiGe:C BiCMOS Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15194 SP - 376 EP - 381 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Grytsenko, Kostyantyn A1 - Doroshenko, T. A1 - Kolomzarov, Yurii A1 - Prokopets, Vadym M. A1 - Fedoriak, O. A1 - Zelinski, R. A1 - Lytvyn, Oksana A1 - Prescher, Dietrich A1 - Grimm, Bernd A1 - Ksianzou, Viachaslau A1 - Schrader, Sigurd A1 - Tolmachev, O. I. A1 - Slominskii, Yu L. A1 - Kurdiukov, V. A1 - Smirnova, G. T1 - Research on the growth of dye film in vacuum in situ N2 - Organic film deposition in vacuum is fast developing scientific and industrial domain. We developed installation for deposition of organic films equipped with optical spectrometer for measurements in situ. We are developing new dyes aimed for application in waveguide sensor, nonlinear optics and studying film organisation during deposition. Fluorinated azo-dyes and azomethine dyes were synthesized at University of Applied Sciences Wildau and at the Institute of Organic Chemistry, Kyiv. Compounds were evaporated at a pressure of 10-3 Pa using resistive heated crucible. Glass and glass covered with polytetrafluoroethylene (PTFE) film are used as substrates. The films were studied with Polytec and StellarNet spectrometers and an atomic force microscope. Optical spectra of the dye films revealed, that some compounds were decomposed during evaporation. Several kinds of dyes were evaporated and deposited without decomposition. Some deposited films formed H-aggregates and other types of aggregates. AFM images of dye films showed that their morphology depends on the chemical structure of the compounds and on the nature of the substrate on which the film was grown. KW - dye KW - solid KW - film KW - in situ KW - optical spectra KW - vacuum deposition Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15206 SP - 318 EP - 323 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Grytsenko, Kostyantyn A1 - Slominskii, Yu L. A1 - Tolmachev, O. I. A1 - Resel, R. A1 - Ksensov, S. A1 - Schrader, Sigurd T1 - Enigma of the second harmonic generation in oriented film of symmetric squaraine N2 - Second harmonic generation (SHG) in the oriented film of symmetric squaraine (Sq) was studied. Oriented Sq film on aligned polytetrafluoroethylyne (PTFE) sublayer prepared by vacuum deposition with subsequent rubbing using a cloth has been obtained. However, the mechanisms of orientation and SHG are still not clear. Methyl and ethyl substituted hydroxyl-Sq (OHSq) compounds formed oriented films with dichroic ratio of 8 on PTFE layer but with dichroic ratio of 1,5 on Teflon AF. Second layer deposition of Me-OHSq on Et-OHSq or of Et-OHSq on Me-OHSq led to an increase of the film dichroic ratio. Only the film, where Me-OHSq was first layer, exhibits an increase of SHG signal after deposition of second layer. Small differences in bi-layered OHSq films structure was detected by X-Ray diffraction (XRD) spectra. KW - dye KW - solid KW - film KW - squaraine KW - optical spectra KW - deposition KW - second harmonic generation Y1 - 2008 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15183 SP - 324 EP - 331 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - JOUR A1 - Ksianzou, Viachaslau A1 - Velagapudi, R. K. A1 - Grimm, Bernd A1 - Schrader, Sigurd T1 - Polarization-dependent optical characterization of poly(phenylquinoxaline) thin films JF - Journal of Applied Physics N2 - Linear optical properties of two types of poly(phenylquinoxaline) (PPQ) are studied by multiwavelength prism coupling technique and optical absorption spectroscopy. Surface roughness measurements are done using atomic force microscopy. PPQs form smooth films of high optical quality having refractive indices above 1.7 in the visible and near infrared spectral ranges. Enhanced birefringence of Δn∼0.04Δn∼0.04 has been observed in both PPQ films prepared by spin coating. Sellmeier coefficients are derived for the wavelength range starting from 0.532to1.064μm0.532to1.064μm for both TE and TM polarizations. Quantum chemical calculations both on the semiempirical and on the ab initio level are carried out in order to calculate the first-order molecular polarizability tensors of the polymer repeat units. From the obtained tensor elements, theoretical values for both the average refractive indices and the maximum expectable birefringence are calculated. Based on these values a more detailed interpretation of the experimental findings is carried out. The dispersion of refractive index is quantified by the value of Abbe’s constant (νd)(νd). In our case the value νd≈11νd≈11 indicates high dispersion in the visible spectral range. The imaginary part kk of the complex refractive index n∗=n−ikn*=n−ik reaches values of k⩽10−3k⩽10−3 in the wavelength range from 0.5to1μm0.5to1μm. Y1 - 2006 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-9761 SN - 1089-7550 VL - 100 IS - 6 ER -