TY - CHAP A1 - Steglich, Patrick A1 - Mai, Christian A1 - Stolarek, David A1 - Lischke, Stefan A1 - Kupijai, Sebastian A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Heinrich, Friedhelm A1 - Bauer, Joachim A1 - Meister, Stefan A1 - Knoll, Dieter A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Partially slotted silicon ring resonator covered with electro-optical polymer T2 - Proceedings of SPIE N2 - In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13771 SN - 1996-756X ER - TY - CHAP A1 - Fursenko, Oksana A1 - Bauer, Joachim A1 - Marschmeyer, Steffen T1 - 3D through silicon via profile metrology based on spectroscopic reflectometry for SOI applications N2 - Through-silicon via (TSV) technology is a key feature for 3D circuit integration. TSVs are formed by etching a vertical via and filling them with a conductive material for creation of interconnections which go through the silicon or silicon-on-insulator (SOI) wafer. The Bosch etch process on Deep Reactive Ion Etching (DRIE) is commonly used for this purpose. The etch profile defined by the critical dimensions (CDs) at the top and at the bottom, by the depth and by the scallop size on the sidewall needs to be monitored and well controlled. In this work a nondestructive 3D metrology of deeply-etched structures with an aspect ratio of more than 10 and patterns with lateral dimensions from 2 to 7 μm in SOI wafer is proposed. Spectroscopic reflectometry in the spectral range of 250-800 nm using a production metrology tool was applied. The depth determinations based on different algorithms are compared. The Pearson correlation coefficient between measured and calculated reflection is suggested as the most appropriate method. A simple method for top CD evaluation is proposed by the measurement of reflection and using the polynomial approximation of reflection versus TSV filling coefficient which is determined as ratio of CD to pitch. The 3D RCWA simulations confirm this dependence. KW - semiconducting wafer KW - etching KW - reflectance spectroscopy KW - silicon KW - 3D metrology KW - metrology KW - scanning electron microscopy Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15272 SP - 268 EP - 273 PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Bauer, Joachim A1 - Burger, Martin A1 - Franz, M. A1 - Grieshober, K. A1 - Wirth, F. A1 - Blondeau, J. A1 - Rautenberg, J. A1 - Mouti, S. A1 - Schrader, Sigurd T1 - Triangulation-based 3D surveying borescope N2 - In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations. KW - borescope KW - 3D measurement KW - triangulation KW - lens design KW - calibration KW - defect Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-15307 SP - 51 EP - 56 PB - SPIE ER - TY - GEN A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Casalboni, Mauro A1 - Schrader, Sigurd T1 - Advanced Nanophotonics: Silicon-Organic Hybrid Technology T2 - Wissenschaftliche Beiträge 2016 N2 - Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer. N2 - Integrierte photonische Bauelemente werden in der Forschung immer bedeutender. Besonders die Siliziumphotonik ist für verschiedene optische Anwendungen sehr attraktiv. Die Verwendung von Silizium-auf-Isolator-Materialsystemen bietet die Möglichkeit, photonische Bauelemente mit elektronischen Geräten auf einem einzelnen Chip zu entwickeln. Durch erhebliche Forschungsinvestitionen hat die photonische Integration auf Silizium-auf-Isolator-Substraten einen Reifegrad, der bereits Industriemaßstäben genügt. Jedoch hat Silizium keinen linearen elektrooptischen Effekt und damit sind moderne Modulationsformate nur schwierig zu realisieren. Daher wird seit eingen Jahren ein neuer Ansatz, die Silizium-Organik Hybridtechnologie, verfolgt. Diese Technologie ist eine tragfähige Ausdehnung des Silizium-auf-Isolator-Materialsystems für eine effiziente Hochgeschwindigkeitsmodulation und optische Signalverarbeitung. In diesem Artikel präsentieren wir unsere theoretischen und experimentellen Untersuchungen zu einem Silizium-Organik Hybrid Ringresonator. Das Design und die Herstellung des neuartigen nanophotonischen Bauelements werden im Detail beschrieben. Der demonstrierte Ringresonator kombiniert die Vorteile zweier verschiedener Wellenleiterarten in einem einzelnen Ring, dem verlustarmen Kanal-Wellenleiter und dem Silizium-organischen Hybridschlitzwellenleiter. Wir demonstrieren erstmals ein Transmissionsspektrum eines solchen Ringresonators, der mit einem elektro-optischen Polymer beschichtet ist. Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-5337 SN - 0949-8214 VL - 20 SP - 45 EP - 48 ER -