TY - JOUR A1 - Kalishettyhalli Mahadevaiah, Mamathamba A1 - Pérez, Eduardo A1 - Lisker, Marco A1 - Schubert, Markus Andreas A1 - Perez-Bosch Quesada, Emilio A1 - Wenger, Christian A1 - Mai, Andreas T1 - Modulating the Filamentary-Based Resistive Switching Properties of HfO₂ Memristive Devices by Adding Al₂O₃ Layers JF - Electronics N2 - The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit. Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-16172 SN - 2079-9292 VL - 11 IS - 10 CY - MDPI ER -