TY - CHAP A1 - Bauer, Joachim A1 - Heinrich, Friedhelm A1 - Fursenko, Oksana A1 - Marschmeyer, Steffen A1 - Bluemich, Adrian A1 - Pulwer, Silvio A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Mai, Andreas A1 - Schrader, Sigurd T1 - Very high aspect ratio through silicon via reflectometry T2 - Proceedings of SPIE N2 - Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup. Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-13758 SN - 1996-756X ER - TY - GEN A1 - Steglich, Patrick A1 - Villringer, Claus A1 - Pulwer, Silvio A1 - Dietzel, Birgit A1 - Ksianzou, Viachaslau A1 - Schrader, Sigurd T1 - Chip-integrierte photonische Bauelemente T2 - Wissenschaftliche Beiträge 2017 N2 - In unserer hochtechnologisierten Gesellschaft spielt die optische Datenübertragung aufgrund der stetig wachsenden Informationsvielfalt eine immer bedeutendere Rolle. In den Anfängen der Nachrichtentechnik waren Datenraten von wenigen bit/s realisierbar. Heute werden mittels optischer Technologien Übertragungsraten von mehreren Gbit/s umgesetzt. Möglich wird dies durch neue Entwicklungen in der Chip-integrierten Photonik. Beispiele dafür sind Chip-integrierte elektrooptische Modulatoren und Schalter. In diesem Artikel werden neue Entwicklungen in der Chip-integrierten Photonik diskutiert und die experimentelle Charakterisierung der Bauelemente in Form eines Ringresonators beschrieben. Für die Experimente wird exemplarisch ein photonisches Bauelement genutzt, das aus einem hybriden Silizium-Polymer-Materialsystem besteht. Die Ergebnisse zeigen, dass diese Materialkombination vielversprechend für zukünftige Chip-integrierte photonische Bauelemente mit extrem geringem Energiebedarf ist. N2 - The focus on high-tech in our society makes optical data transmission increasingly important due to the continually growing diversity of information. At the very beginning of integrated photonics, the data rates achieved were only a few bit/s. Today, transfer rates of several Gbit/s are possible due to novel chip-integrated devices such as electro-optical modulators and switches. This trend was made possible due to new developments in the field of Chip-integrated photonics. In this article, we discuss latest developments in the field of chip-integrated photonic devices and describe their experimental characterization. The experimental setup is developed and described in detail. The example used in our experiments is a hybrid silicon-polymer material system. Our results show that the hybrid material approach is a promising candidate for future on-chip integrated photonic devices with low power consumption. Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:526-opus4-9426 SN - 0949-8214 VL - 21 SP - 55 EP - 59 ER -