<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1519</id>
    <completedYear>2008</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>376</pageFirst>
    <pageLast>381</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Society of Photo-Optical Instrumentation Engineers (SPIE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optical proximity correction for 0.13 um SiGe:C BiCMOS</title>
    <abstract language="eng">We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.</abstract>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-15194</identifier>
    <enrichment key="opus.import.date">2021-09-16T08:49:23+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phptH1Tus</enrichment>
    <enrichment key="opus.import.checksum">a54f534d31da9acad5e853e1561ecee2</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2008 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.798786</enrichment>
    <enrichment key="SourceTitle">S. Geisler, J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, H. Beyer, and M. Niehoff "Optical proximity correction for 0.13 μm SiGe:C BiCMOS", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (2 May 2008); https://doi.org/10.1117/12.798786</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Sebastian Geisler</author>
    <author>Joachim Bauer</author>
    <author>Ulrich Haak</author>
    <author>Ulrich A. Jagdhold</author>
    <author>R. Pliquett</author>
    <author>E. Matthus</author>
    <author>R. Schrader</author>
    <author>H. Wolf</author>
    <author>U. Baetz</author>
    <author>Harald Beyer</author>
    <author>Martin Niehoff</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical proximity correction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>0.13µm SiGe:C BiCMOS</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieurwesen / Wirtschaftsingenieurwesen (bis 8/2014)</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1519/679210.pdf</file>
  </doc>
</export-example>
