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  <doc>
    <id>1608</id>
    <completedYear>2019</completedYear>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>37</volume>
    <type>article</type>
    <publisherName>American Vacuum Society (AVS)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
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    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry</title>
    <abstract language="eng">Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diagnostic of graphene was performed by a fast and nondestructive metrology method based on the combination of spectroscopic ellipsometry and reflectometry (SE/R), realized within a wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of a multilayer film stack, including graphene, interface layer GeOx underneath graphene, and surface roughness is developed and applied for process control. The authors found a relationship between the quality of graphene and the growth of GeOx beneath graphene. Enhanced oxidation of Ge beneath graphene was registered as a long-term process. SE/R measurements were validated and complemented using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry. This comparative study shows a high potential for optical metrology of graphene deposited on Ge/Si structures, due to its great sensitivity, repeatability, and flexibility, realized in a nondestructive way.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16083</identifier>
    <enrichment key="opus.import.date">2022-05-11T08:04:30+00:00</enrichment>
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    <enrichment key="SourceTitle">Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science &amp; Technology B 37, 062927 (2019) https://doi.org/10.1116/1.5122792</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1116/1.5122792</enrichment>
    <enrichment key="CopyrightInfo">This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in "Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science &amp; Technology B 37, 062927 (2019)" and may be found at https://doi.org/10.1116/1.5122792.</enrichment>
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    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Oksana Fursenko</author>
    <author>Mindaugas Lukosius</author>
    <author>Joachim Bauer</author>
    <author>Claus Villringer</author>
    <author>Helge Lux</author>
    <author>Florian Bärwolf</author>
    <author>Marco Lisker</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1608/JVST_B37_062927.pdf</file>
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