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  <doc>
    <id>1303</id>
    <completedYear>2020</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>53</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Direct observation and simultaneous use of linear and quadratic electro-optical effects</title>
    <abstract language="eng">We report on the direct observation and simultaneous use of the linear and quadratic electro-optical effect and propose a method by which higher-order susceptibilities of electro-optical materials can be determined. The evaluation is based on the separation of the second- and third-order susceptibilities and the experimental technique uses a slot waveguide ring resonator fabricated in integrated photonic circuit technology, which is embedded by a guest-host polymer system consisting of the azobenzene dye Disperse Red 1 in a poly(methyl methacrylate) matrix as an active electro-optical material. The contribution of both effects on the electro-optical response under the influence of static and time-varying electrical fields is investigated. We show that the quadratic electro-optical effect has a significant influence on the overall electro-optical response even with acentric molecular orientated molecules. Our findings have important implications for developing electro-optical devices based on polymer-filled slot waveguides and give rise to advanced photonic circuits.</abstract>
    <parentTitle language="eng">Journal of Physics D: Applied Physics</parentTitle>
    <identifier type="issn">1361-6463</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13032</identifier>
    <enrichment key="SourceTitle">Patrick Steglich et al 2020 J. Phys. D: Appl. Phys. 53 125106</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1088/1361-6463/ab6059</enrichment>
    <licence>Creative Commons - CC BY 3.0 - Namensnennung 3.0 Unported</licence>
    <author>Patrick Steglich</author>
    <author>Christian Mai</author>
    <author>Claus Villringer</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1303/Steglich_125106.pdf</file>
  </doc>
  <doc>
    <id>1230</id>
    <completedYear>2019</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>11</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers Using a Photonic Integrated Circuit Technology</title>
    <abstract language="eng">A novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical materials by using a silicon-on-insulator microring resonator is presented. The microring consists of a silicon slot waveguide enabling large dc electric field strength at low applied voltages. The dispersion of third-order hyperpolarizability of a linear conjugated dye is approximated by using a two-level model for the off-resonant spectral region. As an example, the dispersion of the resonance wavelength of the resonator filled with a dye doped polymer was measured in dependence of the applied dc voltage. The polymer was poly (methylmethacrylate) doped with 5 wt% disperse red 1 (DR1), and the measurements have been carried out at the telecommunication wavelength band around 1550 nm (optical C-band). The described measurements represent a new technique to determine the dispersion of the third-order susceptibility and molecular hyperpolarizability of the material filled into the slot of the ring-resonator.</abstract>
    <parentTitle language="eng">IEEE Photonics Journal</parentTitle>
    <identifier type="issn">1943-0655</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-12307</identifier>
    <enrichment key="SourceTitle">P. Steglich et al., "On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers Using a Photonic Integrated Circuit Technology," in IEEE Photonics Journal, vol. 11, no. 3, pp. 1-10, June 2019, Art no. 4900510. doi: 10.1109/JPHOT.2019.2917665</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1109/JPHOT.2019.2917665</enrichment>
    <licence>Creative Commons - CC BY 3.0 - Namensnennung 3.0 Unported</licence>
    <author>Patrick Steglich</author>
    <author>Claus Villringer</author>
    <author>Birgit Dietzel</author>
    <author>Christian Mai</author>
    <author>Sigurd Schrader</author>
    <author>Mauro Casalboni</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electro-optical device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nonlinear optics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optics material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical material</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optics device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>polymer active device</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Funding" number="">DFG-geförderter Publikationsfonds</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1230/08718361.pdf</file>
  </doc>
  <doc>
    <id>1668</id>
    <completedYear>2022</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>9</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">From Lab-on-chip to Lab-in-App: Challenges towards silicon photonic biosensors product developments</title>
    <abstract language="eng">This work presents and evaluates different approaches of integrated optical sensors based on photonic integrated circuit (PIC) technologies for refractive index sensing. Bottlenecks in the fabrication flow towards an applicable system are discussed that hinder a cost-effective mass-production for disposable sensor chips. As sensor device, a waveguide coupled micro-ring based approach is chosen which is manufactured in an 8” wafer level process. We will show that the co-integration with a reproducible, scalable and low-cost microfluidic interface is the main challenge which needs to be overcome for future application of silicon technology based PIC sensor chips.</abstract>
    <parentTitle language="eng">Results in Optics</parentTitle>
    <identifier type="issn">2666-9501</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16687</identifier>
    <enrichment key="opus.import.data">@articleMAI2022100317, title = From Lab-on-chip to Lab-in-App: Challenges towards silicon photonic biosensors product developments, journal = Results in Optics, volume = 9, pages = 100317, year = 2022, issn = 2666-9501, doi = https://doi.org/10.1016/j.rio.2022.100317, url = https://www.sciencedirect.com/science/article/pii/S2666950122001067, author = Andreas Mai and Christian Mai and Patrick Steglich, keywords = Silicon photonic sensors, Integrated optical sensors, Photonic integrated circuits, Optical ring resonators, Photonic biosensor, Refractive index sensing, Interchangeable sensor chip, abstract = This work presents and evaluates different approaches of integrated optical sensors based on photonic integrated circuit (PIC) technologies for refractive index sensing. Bottlenecks in the fabrication flow towards an applicable system are discussed that hinder a cost-effective mass-production for disposable sensor chips. As sensor device, a waveguide coupled micro-ring based approach is chosen which is manufactured in an 8” wafer level process. We will show that the co-integration with a reproducible, scalable and low-cost microfluidic interface is the main challenge which needs to be overcome for future application of silicon technology based PIC sensor chips.</enrichment>
    <enrichment key="opus.import.dataHash">md5:9318deb10de51d82cb376c3098926525</enrichment>
    <enrichment key="opus.import.date">2022-11-22T08:35:03+00:00</enrichment>
    <enrichment key="opus.import.file">/tmp/phpojxiz8</enrichment>
    <enrichment key="opus.import.format">bibtex</enrichment>
    <enrichment key="opus.import.id">637c89b7370635.41135208</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1016/j.rio.2022.100317</enrichment>
    <enrichment key="SourceTitle">Mai, A., Mai, C., &amp; Steglich, P. (2022). From Lab-on-chip to Lab-in-App: Challenges towards silicon photonic biosensors product developments. Results in Optics, 9, 100317. doi:10.1016/j.rio.2022.100317</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>Andreas Mai</author>
    <author>Christian Mai</author>
    <author>Patrick Steglich</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon photonic sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optical sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photonic integrated circuit</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical ring resonator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photonic biosensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>refractive index sensing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>interchangeable sensor chip</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1668/1-s2.0-S2666950122001067-main.pdf</file>
  </doc>
  <doc>
    <id>1924</id>
    <completedYear>2024</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>140399</issue>
    <volume/>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform</title>
    <abstract language="eng">Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8” wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="issn">0040-6090</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-19240</identifier>
    <enrichment key="opus.import.data">@articleANAND2024140399, title = Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform, journal = Thin Solid Films, pages = 140399, year = 2024, issn = 0040-6090, doi = https://doi.org/10.1016/j.tsf.2024.140399, url = https://www.sciencedirect.com/science/article/pii/S0040609024002001, author = K. Anand and P. Steglich and J. Kreissl and C.A. Chavarin and D. Spirito and M. Franck and G. Lecci and I. Costina and N. Herfurth and J. Katzer and C. Mai and A. Becker and J.P. Reithmaier and L. Zimmermann and A. Mai, keywords = hetero-integration, micro-transfer printing, Indium Phosphide, Silicon Oxide, sacrificial layer, oxygen plasma activation, abstract = Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8” wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.</enrichment>
    <enrichment key="opus.import.dataHash">md5:7b8a905e6c4995c0bfa47917ce3cd4cd</enrichment>
    <enrichment key="opus.import.date">2024-06-03T09:03:30+00:00</enrichment>
    <enrichment key="opus.import.file">/tmp/phpa7zjHm</enrichment>
    <enrichment key="opus.import.format">bibtex</enrichment>
    <enrichment key="opus.import.id">665d86e2e5ebe4.60601329</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1016/j.tsf.2024.140399</enrichment>
    <enrichment key="SourceTitle">Anand, K., Steglich, P., Kreissl, J., Chavarin, C. A., Spirito, D., Franck, M., … Mai, A. (2024). Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform. Thin Solid Films, 799, 140399. doi:10.1016/j.tsf.2024.140399</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Ketan Anand</author>
    <author>Patrick Steglich</author>
    <author>Jochen Kreissl</author>
    <author>Carlos Alvarado Chavarin</author>
    <author>Davide Spirito</author>
    <author>Max Franck</author>
    <author>Giulia Lecci</author>
    <author>Ioan Costina</author>
    <author>Norbert Herfurth</author>
    <author>Jens Katzer</author>
    <author>Christian Mai</author>
    <author>Annette Becker</author>
    <author>Johann Peter Reithmaier</author>
    <author>Lars Zimmermann</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>hetero-integration</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>micro-transfer printing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>indium Phosphide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sacrificial layer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxygen plasma activation</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1924/1-s2.0-S0040609024002001-main.pdf</file>
  </doc>
  <doc>
    <id>1364</id>
    <completedYear>2020</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1241</pageFirst>
    <pageLast>1244</pageLast>
    <pageNumber/>
    <edition/>
    <issue>19</issue>
    <volume>32</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release</title>
    <abstract language="eng">Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU.</abstract>
    <parentTitle language="eng">IEEE Photonics Technology Letters</parentTitle>
    <identifier type="issn">1941-0174</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13649</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="SourceTitle">Steglich, P., Bondarenko, S., Mai, C., Paul, M., Weller, M., &amp; Mai, A. (2020). CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release IEEE Photonics Technology Letters. 32 (19), 1241-1244.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1109/LPT.2020.3019114</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Patrick Steglich</author>
    <author>Siegfried Bondarenko</author>
    <author>Christian Mai</author>
    <author>Martin Paul</author>
    <author>Michael G. Weller</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1364/09175013.pdf</file>
  </doc>
  <doc>
    <id>1392</id>
    <completedYear>2021</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A monolithically integrated micro fluidic channel in a silicon-based photonic-integrated-circuit technology for biochemical sensing</title>
    <abstract language="eng">In this work, a cost-effective optofluidic system is propossed and preliminary experimental results are presented. A microfluidic channel monolithically integrated into a photonic integrated circuit technology is used in conjunc- tion with a cyclo-olefin copolymer (COC) substrate to provide fluidic in- and output ports. We report on initial experimental results as well as on the simple and cost-effective fabrication of this optofluidic system by means of micro-milling.</abstract>
    <parentTitle language="eng">Proc. SPIE 11772, Optical Sensors 2021</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13925</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2021 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <enrichment key="SourceTitle">Patrick Steglich, Martin Paul, Christian Mai, Andrea Böhme, Siegfried Bondarenko, Michael G. Weller, and Andreas Mai "A monolithically integrated micro fluidic channel in a silicon-based photonic-integrated-circuit technology for biochemical sensing", Proc. SPIE 11772, Optical Sensors 2021, 1177206 (18 April 2021); https://doi.org/10.1117/12.2588791</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2588791</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Patrick Steglich</author>
    <author>Martin Paul</author>
    <author>Christian Mai</author>
    <author>Andrea Böhme</author>
    <author>Siegfried Bondarenko</author>
    <author>Michael G. Weller</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1392/1177206.pdf</file>
  </doc>
  <doc>
    <id>2044</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>13527</volume>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
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    <title language="eng">Optimization of local backside released micro-ring resonators for sensing applications using silicon photonic integrated circuits in a SOI technology</title>
    <abstract language="eng">Photonic micro-ring resonators (MRR) are widely studied for their high sensitivity across applications like environmental monitoring, healthcare, and chemical analysis. Their evanescent field sensing requires partially unembedded waveguides compatible with CMOS processing. Our approach uses local backside etching with an additional buried oxide (BOX) etch to release waveguides while preserving the back-end of line (BEOL) structure, enabling spatial separation of the sensing area and electronics. The BOX etch critically affects sensor performance, as waveguide surface roughness can alter MRR properties and coupling. We analyzed MRR design variations, comparing wet and dry etching techniques for their effects on optical performance across rib and strip waveguides in quasi-TE and quasi-TM modes. Wafer-level measurements show that backside-released MRR achieve high extinction ratios with slightly reduced quality factors, advancing high-sensitivity photonic sensors.</abstract>
    <parentTitle language="eng">Proceedings of SPIE : Optical Sensors 2025</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20449</identifier>
    <enrichment key="opus.import.date">2025-06-02T09:21:43+00:00</enrichment>
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    <enrichment key="SourceTitle">Tabea Fünning, Anna Peczek, Aleksandra Kroh, Christian Mai, Martin Paul, Florian Thomsen, Robert Tannenberg, Christoph Schumann, Michael G. Weller, Andreas Mai, and Patrick Steglich "Optimization of local backside released micro-ring resonators for sensing applications using silicon photonic integrated circuits in a SOI technology", Proc. SPIE 13527, Optical Sensors 2025, 135270U (23 May 2025); https://doi.org/10.1117/12.3056481</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.3056481</enrichment>
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    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Tabea Fünning</author>
    <author>Anna Peczek</author>
    <author>Aleksandra Kroh</author>
    <author>Christian Mai</author>
    <author>Martin Paul</author>
    <author>Florian Thomsen</author>
    <author>Robert Tannenberg</author>
    <author>Christoph Schumann</author>
    <author>Michael G. Weller</author>
    <author>Andreas Mai</author>
    <author>Patrick Steglich</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photonic sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>micro-ring resonator (MRR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon-on-insulator (SOI)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>local backside etching (LBE)</value>
    </subject>
    <collection role="ddc" number="535">Licht, Infrarot- und Ultraviolettphänomene</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2044/135270U.pdf</file>
  </doc>
  <doc>
    <id>1388</id>
    <completedYear>2021</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>3</volume>
    <type>article</type>
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    <contributingCorporation/>
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    <completedDate>--</completedDate>
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    <title language="eng">Silicon-organic hybrid photonics: an overview of recent advances, electro-optical effects and CMOS integration concepts</title>
    <abstract language="eng">In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given.</abstract>
    <parentTitle language="eng">Journal of Physics: Photonics</parentTitle>
    <identifier type="issn">2515-7647</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13882</identifier>
    <enrichment key="opus.import.date">2021-04-07T07:13:01+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
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    <enrichment key="opus.import.checksum">771b29513d6504f20e045f4cf7af0810</enrichment>
    <enrichment key="SourceTitle">Patrick Steglich et al 2021 J. Phys. Photonics 3 022009</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1088/2515-7647/abd7cf</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Patrick Steglich</author>
    <author>Christian Mai</author>
    <author>Claus Villringer</author>
    <author>Birgit Dietzel</author>
    <author>Siegfried Bondarenko</author>
    <author>Viachaslau Ksianzou</author>
    <author>Francesco Villasmunta</author>
    <author>Christoph Zesch</author>
    <author>Silvio Pulwer</author>
    <author>Martin Burger</author>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Sigurd Schrader</author>
    <author>Francesco Vitale</author>
    <author>Fabio De Matteis</author>
    <author>Paolo Prosposito</author>
    <author>Mauro Casalboni</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1388/Steglich_2021_J._Phys._Photonics_3_022009.pdf</file>
  </doc>
  <doc>
    <id>1214</id>
    <completedYear>2018</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>43</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Quadratic electro-optic effect in silicon-organic hybrid slot-waveguides</title>
    <abstract language="eng">This Letter reports on the quadratic electro-optic effect of polymers, observed in a silicon slot-waveguide at low voltages. We demonstrate that in narrow slots, the electro-optic response with respect to refractive index change is strong enough for on-chip wavelength tuning and intensity modulation using voltages as low as 1 V. A silicon slot-waveguide embedded by a nonlinear optical polymer, consisting of the dye Disperse Red 1 in poly(methyl methacrylate), serves as the phase shifter in a racetrack ring resonator. As deduced from the experimental data, the third-order susceptibility of the utilized electro-optic polymer is about 2·10−19 m2/V2. The demonstrated low-voltage operation and inherently thermal stability show the potential for silicon-organic hybrid devices using the quadratic electro-optic effect.</abstract>
    <parentTitle language="eng">Optics Letters</parentTitle>
    <identifier type="issn">1539-4794</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-12148</identifier>
    <enrichment key="CopyrightInfo">© 2018 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.</enrichment>
    <enrichment key="SourceTitle">Patrick Steglich, Christian Mai, Claus Villringer, Silvio Pulwer, Mauro Casalboni, Sigurd Schrader, and Andreas Mai, "Quadratic electro-optic effect in silicon-organic hybrid slot-waveguides," Opt. Lett. 43, 3598-3601 (2018)</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1364/OL.43.003598</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Patrick Steglich</author>
    <author>Christian Mai</author>
    <author>Claus Villringer</author>
    <author>Silvio Pulwer</author>
    <author>Mauro Casalboni</author>
    <author>Sigurd Schrader</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="535">Licht, Infrarot- und Ultraviolettphänomene</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1214/AS6508168893071391532178246851_content_1.pdf</file>
  </doc>
  <doc>
    <id>1701</id>
    <completedYear>2023</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>12</volume>
    <type>article</type>
    <publisherName>Electrochemical Society (ECS); IOP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication</title>
    <abstract language="eng">Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [−110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.</abstract>
    <parentTitle language="eng">ECS Journal of Solid State Science and Technology</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-17013</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1149/2162-8777/acb739</enrichment>
    <enrichment key="SourceTitle">K. Anand et al 2023 ECS J. Solid State Sci. Technol. 12 024003</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Ketan Anand</author>
    <author>Markus Andreas Schubert</author>
    <author>Agnieszka Anna Corley-Wiciak</author>
    <author>Davide Spirito</author>
    <author>Cedric Corley-Wiciak</author>
    <author>Wolfgang M. Klesse</author>
    <author>Andreas Mai</author>
    <author>Bernd Tillack</author>
    <author>Yuji Yamamoto</author>
    <collection role="ddc" number="541">Physikalische Chemie</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1701/024003.pdf</file>
  </doc>
  <doc>
    <id>1617</id>
    <completedYear>2022</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>11</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace>MDPI</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modulating the Filamentary-Based Resistive Switching Properties of HfO₂ Memristive Devices by Adding Al₂O₃ Layers</title>
    <abstract language="eng">The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.</abstract>
    <parentTitle language="eng">Electronics</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16172</identifier>
    <enrichment key="opus.import.date">2022-06-16T07:03:01+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phpFK6bUR</enrichment>
    <enrichment key="opus.import.checksum">0b96b17d5de532d08553a414296bd1d8</enrichment>
    <enrichment key="SourceTitle">Kalishettyhalli Mahadevaiah, M.; Perez, E.; Lisker, M.; Schubert, M.A.; Perez-Bosch Quesada, E.; Wenger, C.; Mai, A. Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers. Electronics 2022, 11, 1540. https://doi.org/10.3390/electronics11101540</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.3390/electronics11101540</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Mamathamba Kalishettyhalli Mahadevaiah</author>
    <author>Eduardo Pérez</author>
    <author>Marco Lisker</author>
    <author>Markus Andreas Schubert</author>
    <author>Emilio Perez-Bosch Quesada</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1617/electronics-11-01540-v2.pdf</file>
  </doc>
  <doc>
    <id>1082</id>
    <completedYear>2019</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>24</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review</title>
    <abstract language="eng">Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonators. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) system integration and measurement set-ups. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.</abstract>
    <parentTitle language="eng">Molecules</parentTitle>
    <identifier type="issn">1420-3049</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-10822</identifier>
    <enrichment key="SourceTitle">Steglich, P.; Hülsemann, M.; Dietzel, B.; Mai, A. Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review. Molecules 2019, 24, 519.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.3390/molecules24030519</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Patrick Steglich</author>
    <author>Marcel Hülsemann</author>
    <author>Birgit Dietzel</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biosensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biophotonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optical sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aptamer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biomaterial</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ring resonator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lab-on-a-chip</value>
    </subject>
    <collection role="ddc" number="570">Biowissenschaften; Biologie</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Funding" number="">DFG-geförderter Publikationsfonds</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1082/molecules-24-00519.pdf</file>
  </doc>
  <doc>
    <id>1601</id>
    <completedYear>2022</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>8</issue>
    <volume>22</volume>
    <type>article</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review</title>
    <abstract language="eng">Label-free direct-optical biosensors such as surface-plasmon resonance (SPR) spectroscopy has become a gold standard in biochemical analytics in centralized laboratories. Biosensors based on photonic integrated circuits (PIC) are based on the same physical sensing mechanism: evanescent field sensing. PIC-based biosensors can play an important role in healthcare, especially for point-of-care diagnostics, if challenges for a transfer from research laboratory to industrial applications can be overcome. Research is at this threshold, which presents a great opportunity for innovative on-site analyses in the health and environmental sectors. A deeper understanding of the innovative PIC technology is possible by comparing it with the well-established SPR spectroscopy. In this work, we shortly introduce both technologies and reveal similarities and differences. Further, we review some latest advances and compare both technologies in terms of surface functionalization and sensor performance.</abstract>
    <parentTitle language="eng">Sensors</parentTitle>
    <identifier type="issn">1424-8220</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16018</identifier>
    <enrichment key="opus.import.date">2022-04-12T07:05:32+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phpVvk1Au</enrichment>
    <enrichment key="opus.import.checksum">17e313a087a95b3839f4c801d1d02d9a</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.3390/s22082901</enrichment>
    <enrichment key="SourceTitle">Steglich P, Lecci G, Mai A. Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review. Sensors. 2022; 22(8):2901. https://doi.org/10.3390/s22082901</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Patrick Steglich</author>
    <author>Giulia Lecci</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface plasmon resonance</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photonic integrated circuit</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>biosensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface functionalization</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>label-free detection</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="Funding" number="">Publikationsfonds der TH Wildau</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1601/sensors-22-02901.pdf</file>
  </doc>
  <doc>
    <id>1531</id>
    <completedYear>2017</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>250</pageFirst>
    <pageLast>259</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Development of graphene process control by industrial optical spectroscopy setup</title>
    <abstract language="eng">The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots (~ 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated.&#13;
&#13;
This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.</abstract>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-15319</identifier>
    <enrichment key="opus.import.date">2021-09-17T09:01:46+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phpeRhVnU</enrichment>
    <enrichment key="opus.import.checksum">1bf9e1f678a46b2cc89015aca46613b8</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2269603</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <enrichment key="SourceTitle">O. Fursenko, M. Lukosius, G. Lupina, J. Bauer, C. Villringer, and A. Mai "Development of graphene process control by industrial optical spectroscopy setup", Proc. SPIE 10330, Modeling Aspects in Optical Metrology VI, 1033017 (26 June 2017); https://doi.org/10.1117/12.2269603</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Oksana Fursenko</author>
    <author>Mindaugas Lukosius</author>
    <author>G. Lupina</author>
    <author>Joachim Bauer</author>
    <author>Claus Villringer</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical constant</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reflectometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical metrology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>AFM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1531/1033017.pdf</file>
  </doc>
  <doc>
    <id>1608</id>
    <completedYear>2019</completedYear>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>37</volume>
    <type>article</type>
    <publisherName>American Vacuum Society (AVS)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry</title>
    <abstract language="eng">Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diagnostic of graphene was performed by a fast and nondestructive metrology method based on the combination of spectroscopic ellipsometry and reflectometry (SE/R), realized within a wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of a multilayer film stack, including graphene, interface layer GeOx underneath graphene, and surface roughness is developed and applied for process control. The authors found a relationship between the quality of graphene and the growth of GeOx beneath graphene. Enhanced oxidation of Ge beneath graphene was registered as a long-term process. SE/R measurements were validated and complemented using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry. This comparative study shows a high potential for optical metrology of graphene deposited on Ge/Si structures, due to its great sensitivity, repeatability, and flexibility, realized in a nondestructive way.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16083</identifier>
    <enrichment key="opus.import.date">2022-05-11T08:04:30+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phphbjRZd</enrichment>
    <enrichment key="opus.import.checksum">0df6bbf8dfbf24e6f3913d10327d6343</enrichment>
    <enrichment key="SourceTitle">Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science &amp; Technology B 37, 062927 (2019) https://doi.org/10.1116/1.5122792</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1116/1.5122792</enrichment>
    <enrichment key="CopyrightInfo">This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in "Oksana Fursenko, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, Helge Lux, Florian Bärwolf, Marco Lisker, and Andreas Mai , "Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry", Journal of Vacuum Science &amp; Technology B 37, 062927 (2019)" and may be found at https://doi.org/10.1116/1.5122792.</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Oksana Fursenko</author>
    <author>Mindaugas Lukosius</author>
    <author>Joachim Bauer</author>
    <author>Claus Villringer</author>
    <author>Helge Lux</author>
    <author>Florian Bärwolf</author>
    <author>Marco Lisker</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1608/JVST_B37_062927.pdf</file>
  </doc>
  <doc>
    <id>1393</id>
    <completedYear>2021</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
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    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators</title>
    <abstract language="eng">In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on siliconon- insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba0:7Sr0:3TiO3 (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.</abstract>
    <parentTitle language="eng">Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13934</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2021 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <enrichment key="SourceTitle">Patrick Steglich and Andreas Mai "Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators", Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI, 117750L (18 April 2021); https://doi.org/10.1117/12.2592501</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2592501</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Patrick Steglich</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1393/117750L.pdf</file>
  </doc>
  <doc>
    <id>1374</id>
    <completedYear>2021</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>60</volume>
    <type>article</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fiber-to-chip light coupling using a graded-index lensed fiber collimator</title>
    <abstract language="eng">Fiber-to-chip light coupling using a graded-index (GRIN) fiber collimator is investigated. Our experiments with grating couplers and strip waveguides fabricated in a photonic integrated circuit technology reveal that the peak coupling efficiency of a GRIN fiber collimator is 7.8 dB lower than that of a single-mode fiber. However, the 3-dB alignment tolerance is improved by a factor of about 5.7 giving rise to pluggable sensor solutions. This work opens a path toward a cost-effective and portable sensor platform based on pluggable photonic biosensors using GRIN fiber collimators.</abstract>
    <parentTitle language="eng">Optical Engineering</parentTitle>
    <identifier type="issn">1560-2303</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13749</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="CopyrightInfo">Copyright (2021) Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.</enrichment>
    <enrichment key="SourceTitle">Siegfried Bondarenko, Marcel Hülsemann, Andreas Mai, and Patrick Steglich "Fiber-to-chip light coupling using a graded-index lensed fiber collimator," Optical Engineering 60(1), 014105 (29 January 2021). https://doi.org/10.1117/1.OE.60.1.014105</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/1.OE.60.1.014105</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Siegfried Bondarenko</author>
    <author>Marcel Hülsemann</author>
    <author>Andreas Mai</author>
    <author>Patrick Steglich</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1374/OE-20201209_online.pdf</file>
  </doc>
  <doc>
    <id>2056</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>15</volume>
    <type>article</type>
    <publisherName>Springer Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparative simulation analysis of photonic ultrasound sensors based on silicon waveguides</title>
    <abstract language="eng">Pressure sensors based on photonic integrated circuits (PIC) offer the prospect of outstanding sensitivities, extreme miniaturization and have the potential for highly scalable production using CMOS compatible processing. PIC-based pressure sensors detect the change in optical properties, i.e. the intensity or phase of the optical carrier wave inside miniaturized waveguide structures. The detection of ultrasound is achieved by engineering the waveguide architecture such that a pressure causes a high change in the effective refractive index of the waveguide. A range of PIC-based pressure sensors have been reported, but a comparison of the sensitivity of the different approaches is not straightforward, since different pressure sensitive waveguide architectures as well as photonic layouts and measurement setups impact the performance. Additionally, the used sensitivity unit is not uniform throughout the different studies, further complicating a comparison. In this work, a detailed simulation study is carried out by finite element modeling of different pressure sensitive waveguide architectures for a consistent comparison. We analyze three different sensor architectures: (A) a free standing membrane located within a tiny air gap above the waveguide, (B) a waveguide located on top of a deflectable membrane as well as (C) a waveguide embedded inside a pressure-sensitive polymer cladding. The mechanical response of the structures and the resulting changes in mode propagation, i.e. the change of the effective refractive index, are analyzed. The waveguide sensitivities in RIU/MPa for different waveguide types (strip, slot) and polarization states (TE, TM) are compared. The results reveal inherent limitations of the different waveguide designs and create a basis for the selection of suitable designs for further ultrasound sensor development. Possibilities for enhancing waveguide sensitivity are identified and discussed. Additionally, we have shown that the studied approaches are extensible to SiN waveguides.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20560</identifier>
    <enrichment key="opus.import.date">2025-06-23T06:54:07+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1038/s41598-025-01953-9</enrichment>
    <enrichment key="SourceTitle">Fünning, T., Paul, M., Manganelli, C.L. et al. Comparative simulation analysis of photonic ultrasound sensors based on silicon waveguides. Sci Rep 15, 20094 (2025). https://doi.org/10.1038/s41598-025-01953-9</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>Tabea Fünning</author>
    <author>Martin Paul</author>
    <author>Costanza Lucia Manganelli</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <author>Patrick Steglich</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2056/s41598-025-01953-9.pdf</file>
  </doc>
  <doc>
    <id>1375</id>
    <completedYear>2017</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Very high aspect ratio through silicon via reflectometry</title>
    <abstract language="eng">Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.</abstract>
    <parentTitle language="eng">Proceedings of SPIE</parentTitle>
    <identifier type="issn">1996-756X</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13758</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="CopyrightInfo">Copyright (2017) Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.</enrichment>
    <enrichment key="SourceTitle">J. Bauer, F. Heinrich, O. Fursenko, S. Marschmeyer, A. Bluemich, S. Pulwer, P. Steglich, C. Villringer, A. Mai, and S. Schrader "Very high aspect ratio through silicon via reflectometry", Proc. SPIE 10329, Optical Measurement Systems for Industrial Inspection X, 103293J (26 June 2017); https://doi.org/10.1117/12.2269957</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2269957</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Oksana Fursenko</author>
    <author>Steffen Marschmeyer</author>
    <author>Adrian Bluemich</author>
    <author>Silvio Pulwer</author>
    <author>Patrick Steglich</author>
    <author>Claus Villringer</author>
    <author>Andreas Mai</author>
    <author>Sigurd Schrader</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1375/103293J.pdf</file>
  </doc>
  <doc>
    <id>1417</id>
    <completedYear>2021</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>11</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene</title>
    <abstract language="eng">One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="issn">2045-2322</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-14179</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="SourceTitle">Lukose, R., Lisker, M., Akhtar, F. et al. Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene. Sci Rep 11, 13111 (2021). https://doi.org/10.1038/s41598-021-92432-4</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1038/s41598-021-92432-4</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Rasuole Lukose</author>
    <author>Marco Lisker</author>
    <author>Fatima Akhtar</author>
    <author>Mirko Fraschke</author>
    <author>T. Grabolla</author>
    <author>Andreas Mai</author>
    <author>Mindaugas Lukosius</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1417/s41598-021-92432-4.pdf</file>
  </doc>
  <doc>
    <id>1658</id>
    <completedYear>2022</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4373</pageFirst>
    <pageLast>4380</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>4</volume>
    <type>article</type>
    <publisherName>Royal Society of Chemistry (RSC)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reliable metal–graphene contact formation process flows in a CMOS-compatible environment</title>
    <abstract language="eng">The possibility of exploiting the enormous potential of graphene for microelectronics and photonics must go through the optimization of the graphene–metal contact. Achieving low contact resistance is essential for the consideration of graphene as a candidate material for electronic and photonic devices. This work has been carried out in an 8′′ wafer pilot-line for the integration of graphene into a CMOS environment. The main focus is to study the impact of the patterning of graphene and passivation on metal–graphene contact resistance. The latter is measured by means of transmission line measurement (TLM) with several contact designs. The presented approaches enable reproducible formation of contact resistivity as low as 660 Ω μm with a sheet resistance of 1.8 kΩ/□ by proper graphene patterning, passivation of the channel and a post-processing treatment such as annealing.</abstract>
    <parentTitle language="eng">Nanoscale Advances</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16581</identifier>
    <enrichment key="opus.import.data">@ArticleD2NA00351A, author ="Elviretti, M. and Lisker, M. and Lukose, R. and Lukosius, M. and Akhtar, F. and Mai, A.", title ="Reliable metal–graphene contact formation process flows in a CMOS-compatible environment", journal ="Nanoscale Adv.", year ="2022", volume ="4", issue ="20", pages ="4373-4380", publisher ="RSC", doi ="10.1039/D2NA00351A", url ="http://dx.doi.org/10.1039/D2NA00351A", abstract ="The possibility of exploiting the enormous potential of graphene for microelectronics and photonics must go through the optimization of the graphene–metal contact. Achieving low contact resistance is essential for the consideration of graphene as a candidate material for electronic and photonic devices. This work has been carried out in an 8′′ wafer pilot-line for the integration of graphene into a CMOS environment. The main focus is to study the impact of the patterning of graphene and passivation on metal–graphene contact resistance. The latter is measured by means of transmission line measurement (TLM) with several contact designs. The presented approaches enable reproducible formation of contact resistivity as low as 660 Ω μm with a sheet resistance of 1.8 kΩ/□ by proper graphene patterning, passivation of the channel and a post-processing treatment such as annealing."</enrichment>
    <enrichment key="opus.import.dataHash">md5:728b49408c6cef5ae656a7a51acbcec7</enrichment>
    <enrichment key="opus.import.date">2022-10-12T11:40:47+00:00</enrichment>
    <enrichment key="opus.import.file">/tmp/phpSmZu50</enrichment>
    <enrichment key="opus.import.format">bibtex</enrichment>
    <enrichment key="opus.import.id">6346a7bf6b7046.58199399</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1039/D2NA00351A</enrichment>
    <enrichment key="SourceTitle">Elviretti, M., Lisker, M., Lukose, R., Lukosius, M., Akhtara, F., &amp; Mai, A. (2022). Reliable metal–graphene contact formation process flows in a CMOS-compatible environment. Nanoscale Advances, 4, 4373–4380. doi:10.1039/D2NA00351A</enrichment>
    <licence>Creative Commons - CC BY-NC 3.0 - Namensnennung-Nicht kommerziell 3.0 Unported</licence>
    <author>M. Elviretti</author>
    <author>Marco Lisker</author>
    <author>Rasuole Lukose</author>
    <author>Mindaugas Lukosius</author>
    <author>Fatima Akhtar</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1658/d2na00351a.pdf</file>
  </doc>
  <doc>
    <id>1970</id>
    <completedYear>2024</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>97</volume>
    <type>article</type>
    <publisherName>Springer Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance</title>
    <abstract language="eng">Implementing artificial synapses that emulate the synaptic behavior observed in the brain is one of the most critical requirements for neuromorphic computing. Resistive random-access memories (RRAM) have been proposed as a candidate for artificial synaptic devices. For this applicability, RRAM device performance depends on the technology used to fabricate the metal–insulator–metal (MIM) stack and the technology chosen for the selector device. To analyze these dependencies, the integrated RRAM devices in a 4k-bit array are studied on a 200 mm wafer scale in this work. The RRAM devices are integrated into two different CMOS transistor technologies of IHP, namely 250 nm and 130 nm and the devices are compared in terms of their pristine state current. The devices in 130 nm technology have shown lower number of high pristine state current devices per die in comparison to the 250 nm technology. For the 130 nm technology, the forming voltage is reduced due to the decrease of HfO₂ dielectric thickness from 8 nm to 5 nm. Additionally, 5% Al-doped 4 nm HfO₂ dielectric displayed a similar reduction in forming voltage and a lower variation in the values. Finally, the multi-level switching between the dielectric layers in 250 nm and 130 nm technologies are compared, where 130 nm showed a more significant number of conductance levels of seven compared to only four levels observed in 250 nm technology.</abstract>
    <parentTitle language="eng">The European Physical Journal B : Condensed Matter and Complex Systems</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-19701</identifier>
    <enrichment key="opus.import.date">2024-12-03T07:25:21+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1140/epjb/s10051-024-00821-1</enrichment>
    <enrichment key="SourceTitle">Dorai Swamy Reddy, K., Pérez, E., Baroni, A. et al. Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance. Eur. Phys. J. B 97, 181 (2024). https://doi.org/10.1140/epjb/s10051-024-00821-1</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Keerthi Dorai Swamy Reddy</author>
    <author>Eduardo Pérez</author>
    <author>Andrea Baroni</author>
    <author>Mamathamba Kalishettyhalli Mahadevaiah</author>
    <author>Steffen Marschmeyer</author>
    <author>Mirko Fraschke</author>
    <author>Marco Lisker</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="006">Spezielle Computerverfahren</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1970/s10051-024-00821-1.pdf</file>
  </doc>
  <doc>
    <id>1373</id>
    <completedYear>2020</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>5</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Materials Research Forum LLC</publisherName>
    <publisherPlace>Millersville, PA</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Characterization and Tests of Different Mach-Zehnder Silicon Photonic Modulator Configurations</title>
    <abstract language="eng">We designed and produced an integrated silicon photonic circuit, in a single chip with IHP SG25H4_EPIC 0.25 µm technology. A Mach-Zehnder interferometer with an alternative shape for better integration, together with a standard-shape Mach-Zehnder interferometer have been realized. In this work, preliminary results of comparative performance measurements between the two Mach-Zehnder interferometer are shown.</abstract>
    <parentTitle language="eng">Photonics and Photoactive Materials</parentTitle>
    <identifier type="isbn">978-1-64490-071-0</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13731</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="SourceTitle">Davide Badoni, Vincenzo Bonaiuto, Mauro Casalboni, Fabio De Matteis, Giovanni Di Giuseppe, Luca Frontini, Roberto Gunnella, Valentino Liberali, Andreas Mai, Giovanni Paoluzzi, Paolo Prosposito, Andrea Salamon, Gaetano Salina, Fausto Sargeni, Sigurd Schrader, Alberto Stabile, Patrick Steglich, Characterization and Tests of Different Mach-Zehnder Silicon Photonic Modulator Configurations, Materials Research Proceedings, Vol. 16, pp 1-5, 2020</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.21741/9781644900710-1</enrichment>
    <licence>Creative Commons - CC BY 3.0 - Namensnennung 3.0 Unported</licence>
    <author>Davide Badoni</author>
    <author>Vincenzo Bonaiuto</author>
    <author>Mauro Casalboni</author>
    <author>Fabio De Matteis</author>
    <author>Giovanni Di Giuseppe</author>
    <author>Luca Frontini</author>
    <author>Roberto Gunnella</author>
    <author>Valentino Liberali</author>
    <author>Andreas Mai</author>
    <author>Giovanni Paoluzzi</author>
    <author>Paolo Prosposito</author>
    <author>Andrea Salamon</author>
    <author>Gaetano Salina</author>
    <author>Fausto Sargeni</author>
    <author>Sigurd Schrader</author>
    <author>Alberto Stabile</author>
    <author>Patrick Steglich</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mach-Zehnder</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>VLSI</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1373/1.pdf</file>
  </doc>
  <doc>
    <id>1802</id>
    <completedYear>2024</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>177</pageFirst>
    <pageLast>190</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Springer International Publishing</publisherName>
    <publisherPlace>Cham</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Integration of Memristive Devices into a 130 nm CMOS Baseline Technology</title>
    <abstract language="eng">The two main features of the memristive devices which makes them the promising candidates for neuromorphic applications are low power consumption and CMOS compatibility. The monolithic integration of memristive devices with CMOS circuitry paves the way for in-memory computing. This chapter focuses on the factors governing the CMOS integration process. Firstly, the influence of CMOS baseline technology selection on the memristor module is briefly discussed. Secondly, the selection of metal level interconnects and their effect on the memristive device performance is explained. Further, the widely used deposition technique for the CMOS compatible memristive switching layers is presented. Finally, the implementation of the optimized process for the fabrication of the memristive module and its influence on the device performance is presented in terms of electrical characterization results.</abstract>
    <parentTitle language="eng">Bio-Inspired Information Pathways: From Neuroscience to Neurotronics</parentTitle>
    <identifier type="isbn">978-3-031-36705-2</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-18029</identifier>
    <enrichment key="opus.import.date">2023-09-26T08:08:29+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="SourceTitle">Mahadevaiah, M.K. et al. (2024). Integration of Memristive Devices into a 130 nm CMOS Baseline Technology. In: Ziegler, M., Mussenbrock, T., Kohlstedt, H. (eds) Bio-Inspired Information Pathways. Springer Series on Bio- and Neurosystems, vol 16. Springer, Cham. https://doi.org/10.1007/978-3-031-36705-2_7</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1007/978-3-031-36705-2_7</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Mamathamba Kalishettyhalli Mahadevaiah</author>
    <author>Marco Lisker</author>
    <author>Mirko Fraschke</author>
    <author>Steffen Marschmeyer</author>
    <author>Eduardo Pérez</author>
    <author>Emilio Perez-Bosch Quesada</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS compatibility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS integration</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>memristive device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>pristine current</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>resistive switching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermal budget</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>encapsulation</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1802/978-3-031-36705-2_7.pdf</file>
  </doc>
  <doc>
    <id>2059</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>57</volume>
    <type>article</type>
    <publisherName>Springer Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimized silicon nitride-spaced graphene electro-optic modulator with high efficiency and bandwidth</title>
    <abstract language="eng">Optical modulators with high modulation efficiency, large operational bandwidth, high-speed and low energy consumption is essential for the advancement of on-chip optical signal processing. To overcome the bandwidth-efficiency trade-off in graphene optical modulators, a buried silicon nitride waveguide-coupled double-layer graphene electro-absorption (EA) optical modulator has been proposed. In the proposed design, silicon nitride layer is also embedded between the two graphene layers as a dielectric spacer to enhance the graphene-light interaction. An extensive simulation has been performed to optimize the dielectric spacing layers between the two graphene for optimal device performance including the waveguide dimensions and optical modes profile. The simulated results show a high modulation efficiency of 1.1 dB/V and a modulation depth of 0.16 dB/µm, corresponding to a 15-dB extinction ratio for a 100 µm device at 1550 nm, with a 30 nm spacer and 12 V driving voltage. The proposed modulator achieves a 14 GHz bandwidth and operates over a 1050 nm broadband operation spectral range. The concurrent presence of high modulation bandwidth and efficiency renders these modulator designs highly viable for on-chip optical communication applications.</abstract>
    <parentTitle language="eng">Optical and Quantum Electronics</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20597</identifier>
    <enrichment key="opus.import.date">2025-07-07T06:49:47+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1007/s11082-025-08310-0</enrichment>
    <enrichment key="SourceTitle">Raju, A.I., Dubey, P.K., Lukose, R. et al. Optimized silicon nitride-spaced graphene electro-optic modulator with high efficiency and bandwidth. Opt Quant Electron 57, 402 (2025). https://doi.org/10.1007/s11082-025-08310-0</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>Ashraful Islam Raju</author>
    <author>Pawan Kumar Dubey</author>
    <author>Rasuole Lukose</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <author>Mindaugas Lukosius</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electro-optical modulator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene modulator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>modulation efficiency</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon nitride waveguide</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2059/s11082-025-08310-0.pdf</file>
  </doc>
  <doc>
    <id>2082</id>
    <completedYear>2026</completedYear>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>32</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Monolithically Integrated Optical Through-Silicon Waveguides for 3D Chip-to-Chip Photonic Interconnects</title>
    <abstract language="eng">The scaling limitations of electrical interconnects are driving the demand for efficient optical chip-to-chip links. We report the first monolithic integration of air-clad optical through-silicon waveguides in silicon, fabricated via Bosch and cryogenic deep reactive-ion etching. Rib, single-bridge, and double-bridge designs with 50 μm cores and up to 150 μm propagation lengths have been evaluated. Cryogenic-etched rib waveguides achieve the highest median transmission (66%, −1.80 dB), compared to Bosch-etched ribs (62%, −2.08 dB). Across all geometries, 3 dB alignment windows range from 9.3 μm to 49.2 μm, with Bosch-etched double-bridge waveguides providing the broadest tolerance. We show that geometric fidelity outweighs sidewall roughness for transmission and alignment in these large-core, multimode optical through-silicon waveguides. This technology provides a scalable, complementary metal-oxide semiconductor-compatible pathway toward 3D photonic interconnects.</abstract>
    <parentTitle language="eng">IEEE Journal of Selected Topics in Quantum Electronics</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20828</identifier>
    <enrichment key="opus.import.date">2025-09-29T08:03:00+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1109/JSTQE.2025.3615001</enrichment>
    <enrichment key="SourceTitle">Villasmunta, F., Heise, P., Breiter, M., Schrader, S., Schenk, H., Regehly, M., &amp; Mai, A. (2025). Monolithically Integrated Optical Through-Silicon Waveguides for 3D Chip-to-Chip Photonic Interconnects. IEEE Journal of Selected Topics in Quantum Electronics, 32(2), 3700215. doi:10.1109/JSTQE.2025.3615001</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Francesco Villasmunta</author>
    <author>Patrick Heise</author>
    <author>Manuela Breiter</author>
    <author>Sigurd Schrader</author>
    <author>Harald Schenk</author>
    <author>Martin Regehly</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical waveguide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical device fabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>three-dimensional display</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical loss</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical interconnection</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>coupling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical surface wave</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical coupling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>coupler</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>three-dimensional integrated circuit</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>through-silicon vias (TSV)</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2082/2082.pdf</file>
  </doc>
  <doc>
    <id>1975</id>
    <completedYear>2024</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>12892</volume>
    <type>conferenceobject</type>
    <publisherName>Society of Photo-Optical Instrumentation Engineers (SPIE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Design, fabrication, and characterization of integrated optical through-silicon waveguides for 3D photonic interconnections</title>
    <abstract language="eng">In the context of an ever-growing volume of data generated by established and emerging technologies, such as 5G, the Internet of Things, artificial intelligence, machine learning, blockchain, and virtual reality, faster communication speed is demanded by data centers and high-performance computing. Transceiver requirements surged from 100 to 400 Gb/s and beyond. In this scenario, photonics aims to enable Tb/s optical communication at energies below 1 pJ/bit. Targeting higher communication rates while maintaining a low power budget can significantly benefit from 3D photonic chip architectures. This paper presents the simulation-based design, fabrication, and characterization of a monolithically integrated optical through-silicon waveguide that facilitates the connection between different surfaces of a silicon chip. Deep reactive ion etching was employed in both the Bosch and Cryogenic variants to evaluate the effect of sidewall roughness on propagation losses. The mechanical stability of the waveguide was ensured by interrupting the annular trench with a bridging structure. The high-refractive-index contrast to air provides tight light confinement for a core size of up to 50 μm and multimode operation at 1550 nm. The morphology was characterized using scanning electron microscopy (SEM), and optical transmission characterization was performed using relative power loss measurements. A tunable laser source was buttcoupled to a waveguide to analyze light transmission efficiency. Preliminary measurements using single-mode fiber show that the transmitted values exceeded 99% for all structures.</abstract>
    <parentTitle language="eng">Optical Interconnects XXIV</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-19759</identifier>
    <enrichment key="opus.import.date">2024-12-20T06:38:04+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.3003146</enrichment>
    <enrichment key="SourceTitle">Francesco Villasmunta, Patrick Steglich, Claus Villringer, Sigurd Schrader, Harald Schenk, Andreas Mai, and Martin Regehly "Design, fabrication, and characterization of integrated optical through-silicon waveguides for 3D photonic interconnections", Proc. SPIE 12892, Optical Interconnects XXIV, 128920I (11 March 2024); https://doi.org/10.1117/12.3003146</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Francesco Villasmunta</author>
    <author>Patrick Steglich</author>
    <author>Claus Villringer</author>
    <author>Sigurd Schrader</author>
    <author>Harald Schenk</author>
    <author>Andreas Mai</author>
    <author>Martin Regehly</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>multimode photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cryogenic etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ICP-DRIE</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical interconnects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3D chip stacking</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1975/128920I.pdf</file>
  </doc>
  <doc>
    <id>2063</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>32175</pageFirst>
    <pageLast>32189</pageLast>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>33</volume>
    <type>article</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration</title>
    <abstract language="eng">A significant aspect of fabricating 3D chip architectures is ensuring proper contact between the different layers of the chip, which often requires removing the underside of isolation layers before filling vias with conductive material. Currently, scanning electron microscopy is the established method for investigating such structures. In this paper, we propose a rapid, non-destructive optical analysis technique for the simultaneous measurement of through-silicon vias (TSV) depths, silicon wafer thickness, and residual oxide thickness. The proposed method utilizes Fourier peak shift analysis (FPSA) of reflectance measurements in the near-infrared (1200 nm—2200 nm) spectral regions. The application of FPSA to representative samples taken from a commercial TSV integration process for MEMS and CMOS fabrication demonstrated good agreement with reference scanning electron microscopy measurements, confirming the feasibility of the method for in-line and in-situ metrology. The results indicate that FPSA has great potential for real-time process monitoring and control during 3D chip manufacturing.</abstract>
    <parentTitle language="eng">Optics Express</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20633</identifier>
    <enrichment key="opus.import.date">2025-07-28T06:56:09+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="CopyrightInfo">© 2025 Optica Publishing Group under the terms of the Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non- commercial purposes and appropriate attribution is maintained. All other rights are reserved.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1364/OE.564480</enrichment>
    <enrichment key="SourceTitle">Joachim Bauer, Friedhelm Heinrich, Francesco Villasmunta, Claus Villringer, Johanna Reck, Sven Peters, Alexander Treffer, Christian Kuhnt, Steffen Marschmeyer, Oksana Fursenko, David Stolarek, Andreas Mai, and Martin Regehly, "Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration," Opt. Express 33, 32175-32189 (2025)</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Optica Open Access Publishing Agreement</licence>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Francesco Villasmunta</author>
    <author>Claus Villringer</author>
    <author>Johanna Reck</author>
    <author>Sven Peters</author>
    <author>Alexander Treffer</author>
    <author>Christian Kuhnt</author>
    <author>Steffen Marschmeyer</author>
    <author>Oksana Fursenko</author>
    <author>David Stolarek</author>
    <author>Andreas Mai</author>
    <author>Martin Regehly</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>effective refractive index</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier transforms</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>near infrared</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ray tracing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin film</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="Funding" number="">Publikationsfonds der TH Wildau</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2063/oe-33-15-32175.pdf</file>
  </doc>
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