<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>2044</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>13527</volume>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimization of local backside released micro-ring resonators for sensing applications using silicon photonic integrated circuits in a SOI technology</title>
    <abstract language="eng">Photonic micro-ring resonators (MRR) are widely studied for their high sensitivity across applications like environmental monitoring, healthcare, and chemical analysis. Their evanescent field sensing requires partially unembedded waveguides compatible with CMOS processing. Our approach uses local backside etching with an additional buried oxide (BOX) etch to release waveguides while preserving the back-end of line (BEOL) structure, enabling spatial separation of the sensing area and electronics. The BOX etch critically affects sensor performance, as waveguide surface roughness can alter MRR properties and coupling. We analyzed MRR design variations, comparing wet and dry etching techniques for their effects on optical performance across rib and strip waveguides in quasi-TE and quasi-TM modes. Wafer-level measurements show that backside-released MRR achieve high extinction ratios with slightly reduced quality factors, advancing high-sensitivity photonic sensors.</abstract>
    <parentTitle language="eng">Proceedings of SPIE : Optical Sensors 2025</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20449</identifier>
    <enrichment key="opus.import.date">2025-06-02T09:21:43+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="SourceTitle">Tabea Fünning, Anna Peczek, Aleksandra Kroh, Christian Mai, Martin Paul, Florian Thomsen, Robert Tannenberg, Christoph Schumann, Michael G. Weller, Andreas Mai, and Patrick Steglich "Optimization of local backside released micro-ring resonators for sensing applications using silicon photonic integrated circuits in a SOI technology", Proc. SPIE 13527, Optical Sensors 2025, 135270U (23 May 2025); https://doi.org/10.1117/12.3056481</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.3056481</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Tabea Fünning</author>
    <author>Anna Peczek</author>
    <author>Aleksandra Kroh</author>
    <author>Christian Mai</author>
    <author>Martin Paul</author>
    <author>Florian Thomsen</author>
    <author>Robert Tannenberg</author>
    <author>Christoph Schumann</author>
    <author>Michael G. Weller</author>
    <author>Andreas Mai</author>
    <author>Patrick Steglich</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photonic sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>micro-ring resonator (MRR)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon-on-insulator (SOI)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>local backside etching (LBE)</value>
    </subject>
    <collection role="ddc" number="535">Licht, Infrarot- und Ultraviolettphänomene</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2044/135270U.pdf</file>
  </doc>
  <doc>
    <id>2056</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>15</volume>
    <type>article</type>
    <publisherName>Springer Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparative simulation analysis of photonic ultrasound sensors based on silicon waveguides</title>
    <abstract language="eng">Pressure sensors based on photonic integrated circuits (PIC) offer the prospect of outstanding sensitivities, extreme miniaturization and have the potential for highly scalable production using CMOS compatible processing. PIC-based pressure sensors detect the change in optical properties, i.e. the intensity or phase of the optical carrier wave inside miniaturized waveguide structures. The detection of ultrasound is achieved by engineering the waveguide architecture such that a pressure causes a high change in the effective refractive index of the waveguide. A range of PIC-based pressure sensors have been reported, but a comparison of the sensitivity of the different approaches is not straightforward, since different pressure sensitive waveguide architectures as well as photonic layouts and measurement setups impact the performance. Additionally, the used sensitivity unit is not uniform throughout the different studies, further complicating a comparison. In this work, a detailed simulation study is carried out by finite element modeling of different pressure sensitive waveguide architectures for a consistent comparison. We analyze three different sensor architectures: (A) a free standing membrane located within a tiny air gap above the waveguide, (B) a waveguide located on top of a deflectable membrane as well as (C) a waveguide embedded inside a pressure-sensitive polymer cladding. The mechanical response of the structures and the resulting changes in mode propagation, i.e. the change of the effective refractive index, are analyzed. The waveguide sensitivities in RIU/MPa for different waveguide types (strip, slot) and polarization states (TE, TM) are compared. The results reveal inherent limitations of the different waveguide designs and create a basis for the selection of suitable designs for further ultrasound sensor development. Possibilities for enhancing waveguide sensitivity are identified and discussed. Additionally, we have shown that the studied approaches are extensible to SiN waveguides.</abstract>
    <parentTitle language="eng">Scientific Reports</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20560</identifier>
    <enrichment key="opus.import.date">2025-06-23T06:54:07+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1038/s41598-025-01953-9</enrichment>
    <enrichment key="SourceTitle">Fünning, T., Paul, M., Manganelli, C.L. et al. Comparative simulation analysis of photonic ultrasound sensors based on silicon waveguides. Sci Rep 15, 20094 (2025). https://doi.org/10.1038/s41598-025-01953-9</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>Tabea Fünning</author>
    <author>Martin Paul</author>
    <author>Costanza Lucia Manganelli</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <author>Patrick Steglich</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2056/s41598-025-01953-9.pdf</file>
  </doc>
  <doc>
    <id>2059</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>57</volume>
    <type>article</type>
    <publisherName>Springer Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Optimized silicon nitride-spaced graphene electro-optic modulator with high efficiency and bandwidth</title>
    <abstract language="eng">Optical modulators with high modulation efficiency, large operational bandwidth, high-speed and low energy consumption is essential for the advancement of on-chip optical signal processing. To overcome the bandwidth-efficiency trade-off in graphene optical modulators, a buried silicon nitride waveguide-coupled double-layer graphene electro-absorption (EA) optical modulator has been proposed. In the proposed design, silicon nitride layer is also embedded between the two graphene layers as a dielectric spacer to enhance the graphene-light interaction. An extensive simulation has been performed to optimize the dielectric spacing layers between the two graphene for optimal device performance including the waveguide dimensions and optical modes profile. The simulated results show a high modulation efficiency of 1.1 dB/V and a modulation depth of 0.16 dB/µm, corresponding to a 15-dB extinction ratio for a 100 µm device at 1550 nm, with a 30 nm spacer and 12 V driving voltage. The proposed modulator achieves a 14 GHz bandwidth and operates over a 1050 nm broadband operation spectral range. The concurrent presence of high modulation bandwidth and efficiency renders these modulator designs highly viable for on-chip optical communication applications.</abstract>
    <parentTitle language="eng">Optical and Quantum Electronics</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20597</identifier>
    <enrichment key="opus.import.date">2025-07-07T06:49:47+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1007/s11082-025-08310-0</enrichment>
    <enrichment key="SourceTitle">Raju, A.I., Dubey, P.K., Lukose, R. et al. Optimized silicon nitride-spaced graphene electro-optic modulator with high efficiency and bandwidth. Opt Quant Electron 57, 402 (2025). https://doi.org/10.1007/s11082-025-08310-0</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International</licence>
    <author>Ashraful Islam Raju</author>
    <author>Pawan Kumar Dubey</author>
    <author>Rasuole Lukose</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <author>Mindaugas Lukosius</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electro-optical modulator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene modulator</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>modulation efficiency</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon nitride waveguide</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2059/s11082-025-08310-0.pdf</file>
  </doc>
  <doc>
    <id>2063</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>32175</pageFirst>
    <pageLast>32189</pageLast>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>33</volume>
    <type>article</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration</title>
    <abstract language="eng">A significant aspect of fabricating 3D chip architectures is ensuring proper contact between the different layers of the chip, which often requires removing the underside of isolation layers before filling vias with conductive material. Currently, scanning electron microscopy is the established method for investigating such structures. In this paper, we propose a rapid, non-destructive optical analysis technique for the simultaneous measurement of through-silicon vias (TSV) depths, silicon wafer thickness, and residual oxide thickness. The proposed method utilizes Fourier peak shift analysis (FPSA) of reflectance measurements in the near-infrared (1200 nm—2200 nm) spectral regions. The application of FPSA to representative samples taken from a commercial TSV integration process for MEMS and CMOS fabrication demonstrated good agreement with reference scanning electron microscopy measurements, confirming the feasibility of the method for in-line and in-situ metrology. The results indicate that FPSA has great potential for real-time process monitoring and control during 3D chip manufacturing.</abstract>
    <parentTitle language="eng">Optics Express</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20633</identifier>
    <enrichment key="opus.import.date">2025-07-28T06:56:09+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="CopyrightInfo">© 2025 Optica Publishing Group under the terms of the Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non- commercial purposes and appropriate attribution is maintained. All other rights are reserved.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1364/OE.564480</enrichment>
    <enrichment key="SourceTitle">Joachim Bauer, Friedhelm Heinrich, Francesco Villasmunta, Claus Villringer, Johanna Reck, Sven Peters, Alexander Treffer, Christian Kuhnt, Steffen Marschmeyer, Oksana Fursenko, David Stolarek, Andreas Mai, and Martin Regehly, "Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration," Opt. Express 33, 32175-32189 (2025)</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Optica Open Access Publishing Agreement</licence>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Francesco Villasmunta</author>
    <author>Claus Villringer</author>
    <author>Johanna Reck</author>
    <author>Sven Peters</author>
    <author>Alexander Treffer</author>
    <author>Christian Kuhnt</author>
    <author>Steffen Marschmeyer</author>
    <author>Oksana Fursenko</author>
    <author>David Stolarek</author>
    <author>Andreas Mai</author>
    <author>Martin Regehly</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>effective refractive index</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier transforms</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>near infrared</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ray tracing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin film</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="Funding" number="">Publikationsfonds der TH Wildau</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2063/oe-33-15-32175.pdf</file>
  </doc>
</export-example>
