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  <doc>
    <id>1531</id>
    <completedYear>2017</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>250</pageFirst>
    <pageLast>259</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Development of graphene process control by industrial optical spectroscopy setup</title>
    <abstract language="eng">The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots (~ 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated.&#13;
&#13;
This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.</abstract>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-15319</identifier>
    <enrichment key="opus.import.date">2021-09-17T09:01:46+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phpeRhVnU</enrichment>
    <enrichment key="opus.import.checksum">1bf9e1f678a46b2cc89015aca46613b8</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2269603</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <enrichment key="SourceTitle">O. Fursenko, M. Lukosius, G. Lupina, J. Bauer, C. Villringer, and A. Mai "Development of graphene process control by industrial optical spectroscopy setup", Proc. SPIE 10330, Modeling Aspects in Optical Metrology VI, 1033017 (26 June 2017); https://doi.org/10.1117/12.2269603</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Oksana Fursenko</author>
    <author>Mindaugas Lukosius</author>
    <author>G. Lupina</author>
    <author>Joachim Bauer</author>
    <author>Claus Villringer</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>spectroscopic ellipsometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical constant</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reflectometry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical metrology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>AFM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Raman spectroscopy</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1531/1033017.pdf</file>
  </doc>
</export-example>
