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    <id>1924</id>
    <completedYear>2024</completedYear>
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    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>140399</issue>
    <volume/>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
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    <title language="eng">Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform</title>
    <abstract language="eng">Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8” wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="issn">0040-6090</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-19240</identifier>
    <enrichment key="opus.import.data">@articleANAND2024140399, title = Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform, journal = Thin Solid Films, pages = 140399, year = 2024, issn = 0040-6090, doi = https://doi.org/10.1016/j.tsf.2024.140399, url = https://www.sciencedirect.com/science/article/pii/S0040609024002001, author = K. Anand and P. Steglich and J. Kreissl and C.A. Chavarin and D. Spirito and M. Franck and G. Lecci and I. Costina and N. Herfurth and J. Katzer and C. Mai and A. Becker and J.P. Reithmaier and L. Zimmermann and A. Mai, keywords = hetero-integration, micro-transfer printing, Indium Phosphide, Silicon Oxide, sacrificial layer, oxygen plasma activation, abstract = Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8” wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.</enrichment>
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    <enrichment key="opus.import.date">2024-06-03T09:03:30+00:00</enrichment>
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    <enrichment key="opus.import.id">665d86e2e5ebe4.60601329</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1016/j.tsf.2024.140399</enrichment>
    <enrichment key="SourceTitle">Anand, K., Steglich, P., Kreissl, J., Chavarin, C. A., Spirito, D., Franck, M., … Mai, A. (2024). Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8” wafer platform. Thin Solid Films, 799, 140399. doi:10.1016/j.tsf.2024.140399</enrichment>
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    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Ketan Anand</author>
    <author>Patrick Steglich</author>
    <author>Jochen Kreissl</author>
    <author>Carlos Alvarado Chavarin</author>
    <author>Davide Spirito</author>
    <author>Max Franck</author>
    <author>Giulia Lecci</author>
    <author>Ioan Costina</author>
    <author>Norbert Herfurth</author>
    <author>Jens Katzer</author>
    <author>Christian Mai</author>
    <author>Annette Becker</author>
    <author>Johann Peter Reithmaier</author>
    <author>Lars Zimmermann</author>
    <author>Andreas Mai</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>hetero-integration</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>micro-transfer printing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>indium Phosphide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon oxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sacrificial layer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxygen plasma activation</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="4">Hybrid Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1924/1-s2.0-S0040609024002001-main.pdf</file>
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