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  <doc>
    <id>1617</id>
    <completedYear>2022</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>11</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace>MDPI</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Modulating the Filamentary-Based Resistive Switching Properties of HfO₂ Memristive Devices by Adding Al₂O₃ Layers</title>
    <abstract language="eng">The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.</abstract>
    <parentTitle language="eng">Electronics</parentTitle>
    <identifier type="issn">2079-9292</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-16172</identifier>
    <enrichment key="opus.import.date">2022-06-16T07:03:01+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=phpFK6bUR</enrichment>
    <enrichment key="opus.import.checksum">0b96b17d5de532d08553a414296bd1d8</enrichment>
    <enrichment key="SourceTitle">Kalishettyhalli Mahadevaiah, M.; Perez, E.; Lisker, M.; Schubert, M.A.; Perez-Bosch Quesada, E.; Wenger, C.; Mai, A. Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers. Electronics 2022, 11, 1540. https://doi.org/10.3390/electronics11101540</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.3390/electronics11101540</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Mamathamba Kalishettyhalli Mahadevaiah</author>
    <author>Eduardo Pérez</author>
    <author>Marco Lisker</author>
    <author>Markus Andreas Schubert</author>
    <author>Emilio Perez-Bosch Quesada</author>
    <author>Christian Wenger</author>
    <author>Andreas Mai</author>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1617/electronics-11-01540-v2.pdf</file>
  </doc>
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