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  <doc>
    <id>1375</id>
    <completedYear>2017</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Very high aspect ratio through silicon via reflectometry</title>
    <abstract language="eng">Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.</abstract>
    <parentTitle language="eng">Proceedings of SPIE</parentTitle>
    <identifier type="issn">1996-756X</identifier>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-13758</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="CopyrightInfo">Copyright (2017) Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.</enrichment>
    <enrichment key="SourceTitle">J. Bauer, F. Heinrich, O. Fursenko, S. Marschmeyer, A. Bluemich, S. Pulwer, P. Steglich, C. Villringer, A. Mai, and S. Schrader "Very high aspect ratio through silicon via reflectometry", Proc. SPIE 10329, Optical Measurement Systems for Industrial Inspection X, 103293J (26 June 2017); https://doi.org/10.1117/12.2269957</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2269957</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Oksana Fursenko</author>
    <author>Steffen Marschmeyer</author>
    <author>Adrian Bluemich</author>
    <author>Silvio Pulwer</author>
    <author>Patrick Steglich</author>
    <author>Claus Villringer</author>
    <author>Andreas Mai</author>
    <author>Sigurd Schrader</author>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1375/103293J.pdf</file>
  </doc>
</export-example>
