<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>2063</id>
    <completedYear>2025</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>32175</pageFirst>
    <pageLast>32189</pageLast>
    <pageNumber/>
    <edition/>
    <issue>15</issue>
    <volume>33</volume>
    <type>article</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration</title>
    <abstract language="eng">A significant aspect of fabricating 3D chip architectures is ensuring proper contact between the different layers of the chip, which often requires removing the underside of isolation layers before filling vias with conductive material. Currently, scanning electron microscopy is the established method for investigating such structures. In this paper, we propose a rapid, non-destructive optical analysis technique for the simultaneous measurement of through-silicon vias (TSV) depths, silicon wafer thickness, and residual oxide thickness. The proposed method utilizes Fourier peak shift analysis (FPSA) of reflectance measurements in the near-infrared (1200 nm—2200 nm) spectral regions. The application of FPSA to representative samples taken from a commercial TSV integration process for MEMS and CMOS fabrication demonstrated good agreement with reference scanning electron microscopy measurements, confirming the feasibility of the method for in-line and in-situ metrology. The results indicate that FPSA has great potential for real-time process monitoring and control during 3D chip manufacturing.</abstract>
    <parentTitle language="eng">Optics Express</parentTitle>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-20633</identifier>
    <enrichment key="opus.import.date">2025-07-28T06:56:09+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="CopyrightInfo">© 2025 Optica Publishing Group under the terms of the Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non- commercial purposes and appropriate attribution is maintained. All other rights are reserved.</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1364/OE.564480</enrichment>
    <enrichment key="SourceTitle">Joachim Bauer, Friedhelm Heinrich, Francesco Villasmunta, Claus Villringer, Johanna Reck, Sven Peters, Alexander Treffer, Christian Kuhnt, Steffen Marschmeyer, Oksana Fursenko, David Stolarek, Andreas Mai, and Martin Regehly, "Reflectometric method for measuring residual oxides in through-silicon vias for 3D chip integration," Opt. Express 33, 32175-32189 (2025)</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Optica Open Access Publishing Agreement</licence>
    <author>Joachim Bauer</author>
    <author>Friedhelm Heinrich</author>
    <author>Francesco Villasmunta</author>
    <author>Claus Villringer</author>
    <author>Johanna Reck</author>
    <author>Sven Peters</author>
    <author>Alexander Treffer</author>
    <author>Christian Kuhnt</author>
    <author>Steffen Marschmeyer</author>
    <author>Oksana Fursenko</author>
    <author>David Stolarek</author>
    <author>Andreas Mai</author>
    <author>Martin Regehly</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>effective refractive index</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fourier transforms</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>near infrared</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ray tracing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thin film</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="Funding" number="">Publikationsfonds der TH Wildau</collection>
    <collection role="green_open_access" number="1">Gold Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/2063/oe-33-15-32175.pdf</file>
  </doc>
</export-example>
