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  <doc>
    <id>1527</id>
    <completedYear>2016</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>268</pageFirst>
    <pageLast>273</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Society of Photo-Optical Instrumentation Engineers (SPIE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>1</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">3D through silicon via profile metrology based on spectroscopic reflectometry for SOI applications</title>
    <abstract language="eng">Through-silicon via (TSV) technology is a key feature for 3D circuit integration. TSVs are formed by etching a vertical via and filling them with a conductive material for creation of interconnections which go through the silicon or silicon-on-insulator (SOI) wafer. The Bosch etch process on Deep Reactive Ion Etching (DRIE) is commonly used for this purpose. The etch profile defined by the critical dimensions (CDs) at the top and at the bottom, by the depth and by the scallop size on the sidewall needs to be monitored and well controlled.&#13;
&#13;
In this work a nondestructive 3D metrology of deeply-etched structures with an aspect ratio of more than 10 and patterns with lateral dimensions from 2 to 7 μm in SOI wafer is proposed. Spectroscopic reflectometry in the spectral range of 250-800 nm using a production metrology tool was applied. The depth determinations based on different algorithms are compared.&#13;
&#13;
The Pearson correlation coefficient between measured and calculated reflection is suggested as the most appropriate method. A simple method for top CD evaluation is proposed by the measurement of reflection and using the polynomial approximation of reflection versus TSV filling coefficient which is determined as ratio of CD to pitch. The 3D RCWA simulations confirm this dependence.</abstract>
    <identifier type="urn">urn:nbn:de:kobv:526-opus4-15272</identifier>
    <enrichment key="opus.import.date">2021-09-17T07:47:51+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">sword</enrichment>
    <enrichment key="opus.import.file">filename=php8da7dW</enrichment>
    <enrichment key="opus.import.checksum">1bb49158a0ec7f4f514464776d6f76cc</enrichment>
    <enrichment key="SourceTitle">O. Fursenko, J. Bauer, and S. Marschmeyer "3D through silicon via profile metrology based on spectroscopic reflectometry for SOI applications", Proc. SPIE 9890, Optical Micro- and Nanometrology VI, 989015 (26 April 2016); https://doi.org/10.1117/12.2227651</enrichment>
    <enrichment key="DOI_VoR">https://doi.org/10.1117/12.2227651</enrichment>
    <enrichment key="CopyrightInfo">Copyright 2016 Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.</enrichment>
    <licence>Das Dokument ist urheberrechtlich geschützt.</licence>
    <author>Oksana Fursenko</author>
    <author>Joachim Bauer</author>
    <author>Steffen Marschmeyer</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconducting wafer</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>reflectance spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3D metrology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metrology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>scanning electron microscopy</value>
    </subject>
    <collection role="ddc" number="620">Ingenieurwissenschaften und zugeordnete Tätigkeiten</collection>
    <collection role="institutes" number="">Fachbereich Ingenieur- und Naturwissenschaften</collection>
    <collection role="open_access" number="">open_access</collection>
    <collection role="Import" number="import">Import</collection>
    <collection role="green_open_access" number="2">Green Open Access</collection>
    <thesisPublisher>Technische Hochschule Wildau</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-th-wildau/files/1527/989015.pdf</file>
  </doc>
</export-example>
