@article{BauerFursenkoHeinrichetal.2022, author = {Bauer, Joachim and Fursenko, Oksana and Heinrich, Friedhelm and Gutke, Marko and Kornejew, Eckhart and Br{\"o}del, Oliver and Dietzel, Birgit and Kaltenbach, Alexander and Burkhardt, Martin and Edling, Matthias and Steglich, Patrick and Herzog, Michael and Schrader, Sigurd}, title = {Determination of optical constants and scattering properties of transparent polymers for use in optoelectronics}, series = {Optical Materials Express}, volume = {12}, journal = {Optical Materials Express}, number = {1}, publisher = {Optica Publishing Group}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15666}, pages = {204 -- 224}, year = {2022}, abstract = {Knowledge of optical constants, i.e. refractive index n and extinction coefficient k, and light scattering properties of optical polymers are required to optimize micro-optics for light-emitting diodes in terms of efficiency, color properties and light distribution. We present here a model-based diagnostic approach to determine the optical properties of polymers, which should be particularly useful in the development of plastics for optical applications. Optical constants and scattering coefficients were obtained from transmission and reflection measurements in a wavelength range from UV to NIR taking into account scattering effects due to rough surfaces and volume inhomogeneity. Based on the models for the dielectric function, the molecular optical transition energies Eg, critical point energies, Urbach energies and exciton transition energies were determined. Rayleigh and Mie scattering model and van de Hulst\&\#x0027;s anomalous diffraction theory were applied to characterize scattering due to volume inhomogeneities. Scalar diffraction theory was applied to account for surface roughness scattering. Atomic force microscopy with nanomechanical characterization was used to characterize domains in size and shape and to assign optical scattering to a suitable morphological model. The combined optical and mechanical characterization help to improve the qualification of new polymer materials for optical applications.}, language = {en} } @inproceedings{SteglichMaiStolareketal.2016, author = {Steglich, Patrick and Mai, Christian and Stolarek, David and Lischke, Stefan and Kupijai, Sebastian and Villringer, Claus and Pulwer, Silvio and Heinrich, Friedhelm and Bauer, Joachim and Meister, Stefan and Knoll, Dieter and Casalboni, Mauro and Schrader, Sigurd}, title = {Partially slotted silicon ring resonator covered with electro-optical polymer}, series = {Proceedings of SPIE}, booktitle = {Proceedings of SPIE}, issn = {1996-756X}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13771}, year = {2016}, abstract = {In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters.}, language = {en} } @inproceedings{PulwerSteglichVillringeretal.2016, author = {Pulwer, Silvio and Steglich, Patrick and Villringer, Claus and Bauer, Joachim and Burger, Martin and Franz, M. and Grieshober, K. and Wirth, F. and Blondeau, J. and Rautenberg, J. and Mouti, S. and Schrader, Sigurd}, title = {Triangulation-based 3D surveying borescope}, publisher = {SPIE}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15307}, pages = {51 -- 56}, year = {2016}, abstract = {In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations.}, language = {en} } @inproceedings{BauerHeinrichFursenkoetal.2017, author = {Bauer, Joachim and Heinrich, Friedhelm and Fursenko, Oksana and Marschmeyer, Steffen and Bluemich, Adrian and Pulwer, Silvio and Steglich, Patrick and Villringer, Claus and Mai, Andreas and Schrader, Sigurd}, title = {Very high aspect ratio through silicon via reflectometry}, series = {Proceedings of SPIE}, booktitle = {Proceedings of SPIE}, issn = {1996-756X}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13758}, year = {2017}, abstract = {Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.}, language = {en} } @article{BauerGutkeHeinrichetal.2020, author = {Bauer, Joachim and Gutke, Marko and Heinrich, Friedhelm and Edling, Matthias and Stoycheva, Vesela and Kaltenbach, Alexander and Burkhardt, Martin and Gruenefeld, Martin and Gamp, Matthias and Gerhard, Christoph and Steglich, Patrick and Steffen, Sebastian and Herzog, Michael and Dreyer, Christian and Schrader, Sigurd}, title = {Novel UV-transparent 2-component polyurethane resin for chip-on-board LED micro lenses}, series = {Optical Materials Express}, volume = {10}, journal = {Optical Materials Express}, number = {9}, issn = {2159-3930}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13472}, pages = {2085 -- 2099}, year = {2020}, abstract = {In this work we present a novel optical polymer system based on polyurethane elastomer components, which combines excellent UV transparency with high thermal stability, good hardness, high surface tension and long pot life. The material looks very promising for encapsulation and microlensing applications for chip-on-board (CoB) light-emitting diodes (LED). The extinction coefficient k, refractive index n, and bandgap parameters were derived from transmission and reflection measurements in a wavelength range of 200-890 nm. Thermogravimetry and differential scanning calorimetry were used to provide glass transition and degradation temperatures. The surface tension was determined by means of contact angle measurements. As proof of concept, a commercial InGaN-CoB-LED is used to demonstrate the suitability of the new material for the production of microlenses.}, language = {en} } @misc{SteglichVillringerPulweretal.2016, author = {Steglich, Patrick and Villringer, Claus and Pulwer, Silvio and Bauer, Joachim and Heinrich, Friedhelm and Casalboni, Mauro and Schrader, Sigurd}, title = {Advanced Nanophotonics: Silicon-Organic Hybrid Technology}, series = {Wissenschaftliche Beitr{\"a}ge 2016}, volume = {20}, journal = {Wissenschaftliche Beitr{\"a}ge 2016}, issn = {0949-8214}, doi = {10.15771/0949-8214_2016_1_6}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-5337}, pages = {45 -- 48}, year = {2016}, abstract = {Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer.}, language = {en} } @article{SteglichMaiVillringeretal.2021, author = {Steglich, Patrick and Mai, Christian and Villringer, Claus and Dietzel, Birgit and Bondarenko, Siegfried and Ksianzou, Viachaslau and Villasmunta, Francesco and Zesch, Christoph and Pulwer, Silvio and Burger, Martin and Bauer, Joachim and Heinrich, Friedhelm and Schrader, Sigurd and Vitale, Francesco and De Matteis, Fabio and Prosposito, Paolo and Casalboni, Mauro and Mai, Andreas}, title = {Silicon-organic hybrid photonics: an overview of recent advances, electro-optical effects and CMOS integration concepts}, series = {Journal of Physics: Photonics}, volume = {3}, journal = {Journal of Physics: Photonics}, number = {2}, issn = {2515-7647}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13882}, year = {2021}, abstract = {In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon-organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon-organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given.}, language = {en} }