@inproceedings{BauerHeinrichFursenkoetal.2017, author = {Bauer, Joachim and Heinrich, Friedhelm and Fursenko, Oksana and Marschmeyer, Steffen and Bluemich, Adrian and Pulwer, Silvio and Steglich, Patrick and Villringer, Claus and Mai, Andreas and Schrader, Sigurd}, title = {Very high aspect ratio through silicon via reflectometry}, series = {Proceedings of SPIE}, booktitle = {Proceedings of SPIE}, issn = {1996-756X}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13758}, year = {2017}, abstract = {Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.}, language = {en} } @misc{SteglichVillringerPulweretal.2017, author = {Steglich, Patrick and Villringer, Claus and Pulwer, Silvio and Dietzel, Birgit and Ksianzou, Viachaslau and Schrader, Sigurd}, title = {Chip-integrierte photonische Bauelemente}, series = {Wissenschaftliche Beitr{\"a}ge 2017}, volume = {21}, journal = {Wissenschaftliche Beitr{\"a}ge 2017}, issn = {0949-8214}, doi = {10.15771/0949-8214_2017_7}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-9426}, pages = {55 -- 59}, year = {2017}, abstract = {In unserer hochtechnologisierten Gesellschaft spielt die optische Daten{\"u}bertragung aufgrund der stetig wachsenden Informationsvielfalt eine immer bedeutendere Rolle. In den Anf{\"a}ngen der Nachrichtentechnik waren Datenraten von wenigen bit/s realisierbar. Heute werden mittels optischer Technologien {\"U}bertragungsraten von mehreren Gbit/s umgesetzt. M{\"o}glich wird dies durch neue Entwicklungen in der Chip-integrierten Photonik. Beispiele daf{\"u}r sind Chip-integrierte elektrooptische Modulatoren und Schalter. In diesem Artikel werden neue Entwicklungen in der Chip-integrierten Photonik diskutiert und die experimentelle Charakterisierung der Bauelemente in Form eines Ringresonators beschrieben. F{\"u}r die Experimente wird exemplarisch ein photonisches Bauelement genutzt, das aus einem hybriden Silizium-Polymer-Materialsystem besteht. Die Ergebnisse zeigen, dass diese Materialkombination vielversprechend f{\"u}r zuk{\"u}nftige Chip-integrierte photonische Bauelemente mit extrem geringem Energiebedarf ist.}, language = {de} }