@article{AnandSchubertCorleyWiciaketal.2023, author = {Anand, Ketan and Schubert, Markus Andreas and Corley-Wiciak, Agnieszka Anna and Spirito, Davide and Corley-Wiciak, Cedric and Klesse, Wolfgang M. and Mai, Andreas and Tillack, Bernd and Yamamoto, Yuji}, title = {Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication}, series = {ECS Journal of Solid State Science and Technology}, volume = {12}, journal = {ECS Journal of Solid State Science and Technology}, publisher = {Electrochemical Society (ECS); IOP}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-17013}, year = {2023}, abstract = {Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40\% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65\% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4\% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [-110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.}, language = {en} } @article{KalishettyhalliMahadevaiahPerezLiskeretal.2022, author = {Kalishettyhalli Mahadevaiah, Mamathamba and P{\´e}rez, Eduardo and Lisker, Marco and Schubert, Markus Andreas and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas}, title = {Modulating the Filamentary-Based Resistive Switching Properties of HfO₂ Memristive Devices by Adding Al₂O₃ Layers}, series = {Electronics}, volume = {11}, journal = {Electronics}, number = {10}, address = {MDPI}, issn = {2079-9292}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-16172}, year = {2022}, abstract = {The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.}, language = {en} } @article{SteglichHuelsemannDietzeletal.2019, author = {Steglich, Patrick and H{\"u}lsemann, Marcel and Dietzel, Birgit and Mai, Andreas}, title = {Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review}, series = {Molecules}, volume = {24}, journal = {Molecules}, number = {3}, issn = {1420-3049}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-10822}, year = {2019}, abstract = {Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonators. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) system integration and measurement set-ups. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.}, language = {en} } @article{SteglichLecciMai2022, author = {Steglich, Patrick and Lecci, Giulia and Mai, Andreas}, title = {Surface Plasmon Resonance (SPR) Spectroscopy and Photonic Integrated Circuit (PIC) Biosensors: A Comparative Review}, series = {Sensors}, volume = {22}, journal = {Sensors}, number = {8}, publisher = {MDPI}, issn = {1424-8220}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-16018}, year = {2022}, abstract = {Label-free direct-optical biosensors such as surface-plasmon resonance (SPR) spectroscopy has become a gold standard in biochemical analytics in centralized laboratories. Biosensors based on photonic integrated circuits (PIC) are based on the same physical sensing mechanism: evanescent field sensing. PIC-based biosensors can play an important role in healthcare, especially for point-of-care diagnostics, if challenges for a transfer from research laboratory to industrial applications can be overcome. Research is at this threshold, which presents a great opportunity for innovative on-site analyses in the health and environmental sectors. A deeper understanding of the innovative PIC technology is possible by comparing it with the well-established SPR spectroscopy. In this work, we shortly introduce both technologies and reveal similarities and differences. Further, we review some latest advances and compare both technologies in terms of surface functionalization and sensor performance.}, language = {en} } @inproceedings{FursenkoLukosiusLupinaetal.2017, author = {Fursenko, Oksana and Lukosius, Mindaugas and Lupina, G. and Bauer, Joachim and Villringer, Claus and Mai, Andreas}, title = {Development of graphene process control by industrial optical spectroscopy setup}, publisher = {SPIE}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15319}, pages = {250 -- 259}, year = {2017}, abstract = {The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots (~ 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated. This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.}, language = {en} } @article{FursenkoLukosiusBaueretal.2019, author = {Fursenko, Oksana and Lukosius, Mindaugas and Bauer, Joachim and Villringer, Claus and Lux, Helge and B{\"a}rwolf, Florian and Lisker, Marco and Mai, Andreas}, title = {Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry}, series = {Journal of Vacuum Science \& Technology B}, volume = {37}, journal = {Journal of Vacuum Science \& Technology B}, number = {6}, publisher = {American Vacuum Society (AVS)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-16083}, year = {2019}, abstract = {Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diagnostic of graphene was performed by a fast and nondestructive metrology method based on the combination of spectroscopic ellipsometry and reflectometry (SE/R), realized within a wafer optical metrology tool. A robust procedure for unambiguous thickness monitoring of a multilayer film stack, including graphene, interface layer GeOx underneath graphene, and surface roughness is developed and applied for process control. The authors found a relationship between the quality of graphene and the growth of GeOx beneath graphene. Enhanced oxidation of Ge beneath graphene was registered as a long-term process. SE/R measurements were validated and complemented using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry. This comparative study shows a high potential for optical metrology of graphene deposited on Ge/Si structures, due to its great sensitivity, repeatability, and flexibility, realized in a nondestructive way.}, language = {en} } @inproceedings{SteglichMai2021, author = {Steglich, Patrick and Mai, Andreas}, title = {Analysis of BTO-on-Si-waveguides for energy-efficient electro-optical modulators}, series = {Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI}, booktitle = {Proc. SPIE 11775, Integrated Optics: Design, Devices, Systems and Applications VI}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13934}, year = {2021}, abstract = {In this work, we analyze a horizontal slot waveguide configuration, which evaluates the potential for an integration of barium titanate (BTO) based modulators into a photonic integrated circuit (PIC) technology based on siliconon- insulator (SOI) wafer. The waveguide configuration consists of a doped crystal silicon layer, a Ba0:7Sr0:3TiO3 (BST) template layer, a barium titanate (BTO) layer and a doped poly-silicon layer on top. In contrast to current approaches, we analyze the performance of this waveguide-structure by using a vertical electrode configuration that is formed by the doped silicon layer. In this way, the electric field strength is dramatically increased compared to current horizontal electrode configuration.}, language = {en} } @article{BondarenkoHuelsemannMaietal.2021, author = {Bondarenko, Siegfried and H{\"u}lsemann, Marcel and Mai, Andreas and Steglich, Patrick}, title = {Fiber-to-chip light coupling using a graded-index lensed fiber collimator}, series = {Optical Engineering}, volume = {60}, journal = {Optical Engineering}, number = {1}, publisher = {SPIE}, issn = {1560-2303}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13749}, year = {2021}, abstract = {Fiber-to-chip light coupling using a graded-index (GRIN) fiber collimator is investigated. Our experiments with grating couplers and strip waveguides fabricated in a photonic integrated circuit technology reveal that the peak coupling efficiency of a GRIN fiber collimator is 7.8 dB lower than that of a single-mode fiber. However, the 3-dB alignment tolerance is improved by a factor of about 5.7 giving rise to pluggable sensor solutions. This work opens a path toward a cost-effective and portable sensor platform based on pluggable photonic biosensors using GRIN fiber collimators.}, language = {en} } @article{FuenningPaulManganellietal.2025, author = {F{\"u}nning, Tabea and Paul, Martin and Manganelli, Costanza Lucia and Wenger, Christian and Mai, Andreas and Steglich, Patrick}, title = {Comparative simulation analysis of photonic ultrasound sensors based on silicon waveguides}, series = {Scientific Reports}, volume = {15}, journal = {Scientific Reports}, publisher = {Springer Nature}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-20560}, year = {2025}, abstract = {Pressure sensors based on photonic integrated circuits (PIC) offer the prospect of outstanding sensitivities, extreme miniaturization and have the potential for highly scalable production using CMOS compatible processing. PIC-based pressure sensors detect the change in optical properties, i.e. the intensity or phase of the optical carrier wave inside miniaturized waveguide structures. The detection of ultrasound is achieved by engineering the waveguide architecture such that a pressure causes a high change in the effective refractive index of the waveguide. A range of PIC-based pressure sensors have been reported, but a comparison of the sensitivity of the different approaches is not straightforward, since different pressure sensitive waveguide architectures as well as photonic layouts and measurement setups impact the performance. Additionally, the used sensitivity unit is not uniform throughout the different studies, further complicating a comparison. In this work, a detailed simulation study is carried out by finite element modeling of different pressure sensitive waveguide architectures for a consistent comparison. We analyze three different sensor architectures: (A) a free standing membrane located within a tiny air gap above the waveguide, (B) a waveguide located on top of a deflectable membrane as well as (C) a waveguide embedded inside a pressure-sensitive polymer cladding. The mechanical response of the structures and the resulting changes in mode propagation, i.e. the change of the effective refractive index, are analyzed. The waveguide sensitivities in RIU/MPa for different waveguide types (strip, slot) and polarization states (TE, TM) are compared. The results reveal inherent limitations of the different waveguide designs and create a basis for the selection of suitable designs for further ultrasound sensor development. Possibilities for enhancing waveguide sensitivity are identified and discussed. Additionally, we have shown that the studied approaches are extensible to SiN waveguides.}, language = {en} } @inproceedings{BauerHeinrichFursenkoetal.2017, author = {Bauer, Joachim and Heinrich, Friedhelm and Fursenko, Oksana and Marschmeyer, Steffen and Bluemich, Adrian and Pulwer, Silvio and Steglich, Patrick and Villringer, Claus and Mai, Andreas and Schrader, Sigurd}, title = {Very high aspect ratio through silicon via reflectometry}, series = {Proceedings of SPIE}, booktitle = {Proceedings of SPIE}, issn = {1996-756X}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13758}, year = {2017}, abstract = {Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.}, language = {en} }