@article{AnandSteglichKreissletal.2024, author = {Anand, Ketan and Steglich, Patrick and Kreissl, Jochen and Chavarin, Carlos Alvarado and Spirito, Davide and Franck, Max and Lecci, Giulia and Costina, Ioan and Herfurth, Norbert and Katzer, Jens and Mai, Christian and Becker, Annette and Reithmaier, Johann Peter and Zimmermann, Lars and Mai, Andreas}, title = {Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8" wafer platform}, series = {Thin Solid Films}, journal = {Thin Solid Films}, number = {140399}, publisher = {Elsevier}, issn = {0040-6090}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-19240}, year = {2024}, abstract = {Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8" wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.}, language = {en} } @inproceedings{MeisterAlSaadiFrankeetal.2010, author = {Meister, Stefan and Al-Saadi, Aws and Franke, B{\"u}lent A. and Mahdi, Shaimaa and Kuhlow, Berndt and Voigt, Karsten and Tillack, Bernd and Richter, Harald H. and Zimmermann, Lars and Ksianzou, Viachaslau and Schrader, Sigurd and Eichler, Hans J.}, title = {Photonic crystal microcavities in SOI waveguides produced in a CMOS environment}, publisher = {Society of Photo-Optical Instrumentation Engineers (SPIE)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15223}, pages = {330 -- 339}, year = {2010}, abstract = {We have investigated microcavities in Silicon-on-Insolator (SOI) waveguides. The rectangular waveguides with 500 nm width are fabricated in the 220 nm silicon device layer. The microcavities are formed by one-dimensional photonic crystals in Fabry-Perot structure directly written in the waveguides. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography, where the waveguides as well as the photonic crystals are created in the same step using a single mask. In order to achieve a desired spectral shape of the filter function capable for several applications, a number of different cavities were investigated, e.g. single cavities of first and higher order as well as multi-cavity filters. The experimental results are compared with simulations of photonic crystal microcavities in strip waveguides. The spectral transmission function of such filters dependent on the design parameters are calculated by an analysis based on Finite-Difference-Time-Domain (FDTD) method.}, language = {en} } @inproceedings{MeisterAlSaadiFrankeetal.2011, author = {Meister, Stefan and Al-Saadi, Aws and Franke, B{\"u}lent A. and Mahdi, Shaimaa and Szczambura, Miroslaw and Kuhlow, Berndt and Woggon, Ulrike and Zimmermann, Lars and Richter, Harald H. and Stolarek, David and Schrader, Sigurd and Eichler, Hans J.}, title = {Micro-cavities based on width modulated SOI waveguides}, publisher = {Society of Photo-Optical Instrumentation Engineers (SPIE)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15233}, pages = {199 -- 204}, year = {2011}, abstract = {We have designed, fabricated and investigated one-dimensional (1D) micro-cavities in Silicon-on-Insulator (SOI) waveguides. The single mode waveguides are fabricated in a 220 nm silicon device layer. The 1D micro-cavities in Fabry-Perot structure consist of two Bragg-mirror regions formed by a sinusoidal modulation of the waveguide width. The mirror regions are separated by a sub-micron spacer. The SOI photonic structures are produced in a CMOS environment using 248 nm DUV lithography. The waveguides as well as the width modulated mirror regions are designed using a single mask and are fabricated in a shallow trench process. The transmission spectra of these width modulated micro-cavities with different mirror reflectivities and cavity lengths are investigated. Q-factors up to 855 could be observed at 1550 nm wavelength with low insertion loss of 1.9 dB. The width modulated micro-cavities, including the mirror regions, have lengths of less than 20 microns and widths of maximum 450 nm. These small foot-print cavities act as band pass filters and can be used as resonators for laser or electro-optic modulation of light.}, language = {en} } @inproceedings{WangMeisterMahdietal.2011, author = {Wang, Sha and Meister, Stefan and Mahdi, Shaimaa and Franke, B{\"u}lent A. and Al-Saadi, Aws and Zimmermann, Lars and Richter, Harald H. and Stolarek, David and Lisinetskii, Viktor and Ksianzou, Viachaslau and Schrader, Sigurd and Eichler, Hans J.}, title = {Spontaneous and stimulated Raman scattering in planar silicon waveguides}, publisher = {Society of Photo-Optical Instrumentation Engineers (SPIE)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15248}, pages = {281 -- 289}, year = {2011}, abstract = {Raman scattering in planar silicon on insulator (SOI) waveguides with 2 μm width, 220 nm height and 2 cm length is investigated. A cw Nd:YAP laser at 1340.6 nm with 7 GHz FWHM spectral width is used as the pump source. A lensed fiber of 2.5 μm focus diameter is used to couple the pump laser into the waveguide. The coupling efficiency is estimated to be around 10\%. Spontaneous Raman scattering is observed with as low as 2.5 mW pump power inside the waveguide. The spontaneous Raman spectrum is measured by an optical spectrum analyzer. The first order Raman peak is measured at around 1441.4 nm corresponding to a Raman shift of 15.6 THz, while the FWHM of Raman spectrum is measured as around 100 GHz. Maximum Raman output of around 90 pW is obtained by around 22 mW pump. The stimulated Raman gain coefficient is estimated as around 56 cm/GW from the relationship between spontaneous Raman output power and pump power. A temperature dependence of Raman frequency shift of about 0.6 GHz/K is measured. The spontaneous anti-Stokes Raman scattering output peak at 1253 nm is also observed with around 35 mW pump. Stimulated Raman amplification measurement is carried out with a SLED white light source as probe signal. With 35 mW pump power, around 0.6 dB gain has been determined with both pump and probe being TE polarized.}, language = {en} }