@inproceedings{SteglichMaiStolareketal.2016, author = {Steglich, Patrick and Mai, Christian and Stolarek, David and Lischke, Stefan and Kupijai, Sebastian and Villringer, Claus and Pulwer, Silvio and Heinrich, Friedhelm and Bauer, Joachim and Meister, Stefan and Knoll, Dieter and Casalboni, Mauro and Schrader, Sigurd}, title = {Partially slotted silicon ring resonator covered with electro-optical polymer}, series = {Proceedings of SPIE}, booktitle = {Proceedings of SPIE}, issn = {1996-756X}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-13771}, year = {2016}, abstract = {In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters.}, language = {en} } @inproceedings{FursenkoBauerMarschmeyer2016, author = {Fursenko, Oksana and Bauer, Joachim and Marschmeyer, Steffen}, title = {3D through silicon via profile metrology based on spectroscopic reflectometry for SOI applications}, publisher = {Society of Photo-Optical Instrumentation Engineers (SPIE)}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15272}, pages = {268 -- 273}, year = {2016}, abstract = {Through-silicon via (TSV) technology is a key feature for 3D circuit integration. TSVs are formed by etching a vertical via and filling them with a conductive material for creation of interconnections which go through the silicon or silicon-on-insulator (SOI) wafer. The Bosch etch process on Deep Reactive Ion Etching (DRIE) is commonly used for this purpose. The etch profile defined by the critical dimensions (CDs) at the top and at the bottom, by the depth and by the scallop size on the sidewall needs to be monitored and well controlled. In this work a nondestructive 3D metrology of deeply-etched structures with an aspect ratio of more than 10 and patterns with lateral dimensions from 2 to 7 μm in SOI wafer is proposed. Spectroscopic reflectometry in the spectral range of 250-800 nm using a production metrology tool was applied. The depth determinations based on different algorithms are compared. The Pearson correlation coefficient between measured and calculated reflection is suggested as the most appropriate method. A simple method for top CD evaluation is proposed by the measurement of reflection and using the polynomial approximation of reflection versus TSV filling coefficient which is determined as ratio of CD to pitch. The 3D RCWA simulations confirm this dependence.}, language = {en} } @inproceedings{PulwerSteglichVillringeretal.2016, author = {Pulwer, Silvio and Steglich, Patrick and Villringer, Claus and Bauer, Joachim and Burger, Martin and Franz, M. and Grieshober, K. and Wirth, F. and Blondeau, J. and Rautenberg, J. and Mouti, S. and Schrader, Sigurd}, title = {Triangulation-based 3D surveying borescope}, publisher = {SPIE}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15307}, pages = {51 -- 56}, year = {2016}, abstract = {In this work, a measurement concept based on triangulation was developed for borescopic 3D-surveying of surface defects. The integration of such measurement system into a borescope environment requires excellent space utilization. The triangulation angle, the projected pattern, the numerical apertures of the optical system, and the viewing angle were calculated using partial coherence imaging and geometric optical raytracing methods. Additionally, optical aberrations and defocus were considered by the integration of Zernike polynomial coefficients. The measurement system is able to measure objects with a size of 50 μm in all dimensions with an accuracy of ± 5 μm. To manage the issue of a low depth of field while using an optical high resolution system, a wavelength dependent aperture was integrated. Thereby, we are able to control depth of field and resolution of the optical system and can use the borescope in measurement mode with high resolution and low depth of field or in inspection mode with low resolution and higher depth of field. First measurements of a demonstrator system are in good agreement with our simulations.}, language = {en} } @misc{SteglichVillringerPulweretal.2016, author = {Steglich, Patrick and Villringer, Claus and Pulwer, Silvio and Bauer, Joachim and Heinrich, Friedhelm and Casalboni, Mauro and Schrader, Sigurd}, title = {Advanced Nanophotonics: Silicon-Organic Hybrid Technology}, series = {Wissenschaftliche Beitr{\"a}ge 2016}, volume = {20}, journal = {Wissenschaftliche Beitr{\"a}ge 2016}, issn = {0949-8214}, doi = {10.15771/0949-8214_2016_1_6}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-5337}, pages = {45 -- 48}, year = {2016}, abstract = {Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. However, silicon has the disadvantage of linear electro-optical effects, and, therefore, advanced modulation formats are difficult to realize when using silicon-based high-speed modulators. Hence, a new approach was proposed: the silicon-organic hybrid technology. This technology is a viable extension of the silicon-on-insulator material system for efficient high-speed modulation. We herewith present our theoretical and experimental investigations of the silicon-organic hybrid slot-waveguide ring resonator. The advanced device design is described in detail, which allows using both, the efficient silicon-on-insulator strip-waveguides and the silicon-organic hybrid slot-waveguides in single ring resonator. For the first time, we report the transmission spectra of such a resonator covered with an electro-optical polymer.}, language = {en} }