@article{KalishettyhalliMahadevaiahPerezLiskeretal.2022, author = {Kalishettyhalli Mahadevaiah, Mamathamba and P{\´e}rez, Eduardo and Lisker, Marco and Schubert, Markus Andreas and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas}, title = {Modulating the Filamentary-Based Resistive Switching Properties of HfO₂ Memristive Devices by Adding Al₂O₃ Layers}, series = {Electronics}, volume = {11}, journal = {Electronics}, number = {10}, address = {MDPI}, issn = {2079-9292}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-16172}, year = {2022}, abstract = {The resistive switching properties of HfO₂ based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al₂O₃ into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.}, language = {en} } @incollection{KalishettyhalliMahadevaiahLiskerFraschkeetal.2024, author = {Kalishettyhalli Mahadevaiah, Mamathamba and Lisker, Marco and Fraschke, Mirko and Marschmeyer, Steffen and P{\´e}rez, Eduardo and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas}, title = {Integration of Memristive Devices into a 130 nm CMOS Baseline Technology}, series = {Bio-Inspired Information Pathways: From Neuroscience to Neurotronics}, booktitle = {Bio-Inspired Information Pathways: From Neuroscience to Neurotronics}, editor = {Ziegler, Martin and Mussenbrock, Thomas and Kohlstedt, Hermann}, publisher = {Springer International Publishing}, address = {Cham}, isbn = {978-3-031-36705-2}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-18029}, publisher = {Technische Hochschule Wildau}, pages = {177 -- 190}, year = {2024}, abstract = {The two main features of the memristive devices which makes them the promising candidates for neuromorphic applications are low power consumption and CMOS compatibility. The monolithic integration of memristive devices with CMOS circuitry paves the way for in-memory computing. This chapter focuses on the factors governing the CMOS integration process. Firstly, the influence of CMOS baseline technology selection on the memristor module is briefly discussed. Secondly, the selection of metal level interconnects and their effect on the memristive device performance is explained. Further, the widely used deposition technique for the CMOS compatible memristive switching layers is presented. Finally, the implementation of the optimized process for the fabrication of the memristive module and its influence on the device performance is presented in terms of electrical characterization results.}, language = {en} } @article{DoraiSwamyReddyPerezBaronietal.2024, author = {Dorai Swamy Reddy, Keerthi and P{\´e}rez, Eduardo and Baroni, Andrea and Kalishettyhalli Mahadevaiah, Mamathamba and Marschmeyer, Steffen and Fraschke, Mirko and Lisker, Marco and Wenger, Christian and Mai, Andreas}, title = {Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance}, series = {The European Physical Journal B : Condensed Matter and Complex Systems}, volume = {97}, journal = {The European Physical Journal B : Condensed Matter and Complex Systems}, publisher = {Springer Nature}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-19701}, year = {2024}, abstract = {Implementing artificial synapses that emulate the synaptic behavior observed in the brain is one of the most critical requirements for neuromorphic computing. Resistive random-access memories (RRAM) have been proposed as a candidate for artificial synaptic devices. For this applicability, RRAM device performance depends on the technology used to fabricate the metal-insulator-metal (MIM) stack and the technology chosen for the selector device. To analyze these dependencies, the integrated RRAM devices in a 4k-bit array are studied on a 200 mm wafer scale in this work. The RRAM devices are integrated into two different CMOS transistor technologies of IHP, namely 250 nm and 130 nm and the devices are compared in terms of their pristine state current. The devices in 130 nm technology have shown lower number of high pristine state current devices per die in comparison to the 250 nm technology. For the 130 nm technology, the forming voltage is reduced due to the decrease of HfO₂ dielectric thickness from 8 nm to 5 nm. Additionally, 5\% Al-doped 4 nm HfO₂ dielectric displayed a similar reduction in forming voltage and a lower variation in the values. Finally, the multi-level switching between the dielectric layers in 250 nm and 130 nm technologies are compared, where 130 nm showed a more significant number of conductance levels of seven compared to only four levels observed in 250 nm technology.}, language = {en} }