@article{AnandSchubertCorleyWiciaketal.2023, author = {Anand, Ketan and Schubert, Markus Andreas and Corley-Wiciak, Agnieszka Anna and Spirito, Davide and Corley-Wiciak, Cedric and Klesse, Wolfgang M. and Mai, Andreas and Tillack, Bernd and Yamamoto, Yuji}, title = {Lateral Selective SiGe Growth for Local Dislocation-Free SiGe-on-Insulator Virtual Substrate Fabrication}, series = {ECS Journal of Solid State Science and Technology}, volume = {12}, journal = {ECS Journal of Solid State Science and Technology}, publisher = {Electrochemical Society (ECS); IOP}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-17013}, year = {2023}, abstract = {Dislocation free local SiGe-on-insulator (SGOI) virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around a ∼1.25 μm square Si (001) pillar in a cavity formed by HCl vapor phase etching of Si at 850 °C from side of SiO2/Si mesa structure on buried oxide. Smooth root mean square roughness of SiGe surface of 0.14 nm, which is determined by interface roughness between the sacrificially etched Si and the SiO2 cap, is obtained. Uniform Ge content of ∼40\% in the laterally grown SiGe is observed. In the Si pillar, tensile strain of ∼0.65\% is found which could be due to thermal expansion difference between SiO2 and Si. In the SiGe, tensile strain of ∼1.4\% along 〈010〉 direction, which is higher compared to that along 〈110〉 direction, is observed. The tensile strain is induced from both [110] and [-110] directions. Threading dislocations in the SiGe are located only ∼400 nm from Si pillar and stacking faults are running towards 〈110〉 directions, resulting in the formation of a wide dislocation-free area in SiGe along 〈010〉 due to horizontal aspect ratio trapping.}, language = {en} } @article{AnandSteglichKreissletal.2024, author = {Anand, Ketan and Steglich, Patrick and Kreissl, Jochen and Chavarin, Carlos Alvarado and Spirito, Davide and Franck, Max and Lecci, Giulia and Costina, Ioan and Herfurth, Norbert and Katzer, Jens and Mai, Christian and Becker, Annette and Reithmaier, Johann Peter and Zimmermann, Lars and Mai, Andreas}, title = {Adhesive-free bonding for hetero-integration of InP based coupons micro-transfer printed on SiO2 into Complementary Metal-Oxide-Semiconductor backend for Si photonics application on 8" wafer platform}, series = {Thin Solid Films}, journal = {Thin Solid Films}, number = {140399}, publisher = {Elsevier}, issn = {0040-6090}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-19240}, year = {2024}, abstract = {Micro-Transfer printing (µTP) is a promising technique for hetero-integration of III-V materials into Si-based photonic platforms. To enhance the print yield by increasing the adhesion between the III-V material and Si or SiO2 surface, an adhesion promoter like Benzocyclobutene is typically used as interlayer. In this work, we demonstrate µTP of InP based coupons on SiO2 interlayer without any adhesive interlayer and investigate the mechanism of adhesive free bonding. Source coupons are InP-based coupon stacks on a sacrificial layer that is removed by a chemical wet etch with FeCl3. For the target we fabricated amorphous-Si waveguides on 8" wafer encapsulated by a High Density Plasma SiO2 which was planarized by a chemical mechanical polishing procedure. We used O2 plasma to activate both source and target to increase adhesion between coupon and substrate. To get a better understanding of the bonding mechanism we applied several surface characterization methods. Root mean square roughness of InP and SiO2 was measured by atomic force microscopy before and after plasma activation. The step height of the micro-transfer printed source coupon on the target wafer is estimated by optical step profiler. We used Raman peak position mappings of InP to analyze possible strain and contact angle measurements on SiO2, before and after plasma activation to observe a change in the hydrophilicity of the surface. X-ray Photoelectron Spectroscopy analysis was used to characterize the surface energy states of P2p, In3d, O1s for InP source and Si2p, O1s for SiO2 target. Our results demonstrate direct bonding of InP coupons by means of µTP without the need of a strain-compensation layer. In this way, a promising route towards Complementary Metal-Oxide-Semiconductor compatible use of µTP for the hetero-integration of InP is provided.}, language = {en} }