@article{BauerFursenkoHeinrichetal.2022, author = {Bauer, Joachim and Fursenko, Oksana and Heinrich, Friedhelm and Gutke, Marko and Kornejew, Eckhart and Br{\"o}del, Oliver and Dietzel, Birgit and Kaltenbach, Alexander and Burkhardt, Martin and Edling, Matthias and Steglich, Patrick and Herzog, Michael and Schrader, Sigurd}, title = {Determination of optical constants and scattering properties of transparent polymers for use in optoelectronics}, series = {Optical Materials Express}, volume = {12}, journal = {Optical Materials Express}, number = {1}, publisher = {Optica Publishing Group}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15666}, pages = {204 -- 224}, year = {2022}, abstract = {Knowledge of optical constants, i.e. refractive index n and extinction coefficient k, and light scattering properties of optical polymers are required to optimize micro-optics for light-emitting diodes in terms of efficiency, color properties and light distribution. We present here a model-based diagnostic approach to determine the optical properties of polymers, which should be particularly useful in the development of plastics for optical applications. Optical constants and scattering coefficients were obtained from transmission and reflection measurements in a wavelength range from UV to NIR taking into account scattering effects due to rough surfaces and volume inhomogeneity. Based on the models for the dielectric function, the molecular optical transition energies Eg, critical point energies, Urbach energies and exciton transition energies were determined. Rayleigh and Mie scattering model and van de Hulst\&\#x0027;s anomalous diffraction theory were applied to characterize scattering due to volume inhomogeneities. Scalar diffraction theory was applied to account for surface roughness scattering. Atomic force microscopy with nanomechanical characterization was used to characterize domains in size and shape and to assign optical scattering to a suitable morphological model. The combined optical and mechanical characterization help to improve the qualification of new polymer materials for optical applications.}, language = {en} } @inproceedings{FursenkoLukosiusLupinaetal.2017, author = {Fursenko, Oksana and Lukosius, Mindaugas and Lupina, G. and Bauer, Joachim and Villringer, Claus and Mai, Andreas}, title = {Development of graphene process control by industrial optical spectroscopy setup}, publisher = {SPIE}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-15319}, pages = {250 -- 259}, year = {2017}, abstract = {The successful integration of graphene into microelectronic devices depends strongly on the availability of fast and nondestructive characterization methods of graphene grown by CVD on large diameter production wafers [1-3] which are in the interest of the semiconductor industry. Here, a high-throughput optical metrology method for measuring the thickness and uniformity of large-area graphene sheets is demonstrated. The method is based on the combination of spectroscopic ellipsometry and normal incidence reflectometry in UV-Vis wavelength range (200-800 nm) with small light spots (~ 30 μm2) realized in wafer optical metrology tool. In the first step graphene layers were transferred on a SiO2/Si substrate in order to determine the optical constants of graphene by the combination of multi-angle ellipsometry and reflectometry. Then these data were used for the development of a process control recipe of CVD graphene on 200 mm Ge(100)/Si(100) wafers. The graphene layer quality was additionally monitored by Raman spectroscopy. Atomic force microscopy measurements were performed for micro topography evaluation. In consequence, a robust recipe for unambiguous thickness monitoring of all components of a multilayer film stack, including graphene, surface residuals or interface layer underneath graphene and surface roughness is developed. Optical monitoring of graphene thickness uniformity over a wafer has shown an excellent long term stability (s=0.004 nm) regardless of the growth of interfacial GeO2 and surface roughness. The sensitivity of the optical identification of graphene during microelectronic processing was evaluated. This optical metrology technique with combined data collection exhibit a fast and highly precise method allowing one an unambiguous detection of graphene after transferring as well as after the CVD deposition process on a Ge(100)/Si(100) wafer. This approach is well suited for industrial applications due to its repeatability and flexibility.}, language = {en} } @article{LuxEdlingLuccietal.2019, author = {Lux, Helge and Edling, Matthias and Lucci, Massimiliano and Kitzmann, Julia and Villringer, Claus and Siemroth, Peter and De Matteis, Fabio and Schrader, Sigurd}, title = {The Role of Substrate Temperature and Magnetic Filtering for DLC by Cathodic Arc Evaporation}, series = {Coatings}, volume = {9}, journal = {Coatings}, number = {5}, issn = {2079-6412}, url = {http://nbn-resolving.de/urn:nbn:de:kobv:526-opus4-12295}, pages = {345}, year = {2019}, abstract = {Diamond-like carbon (DLC) films were deposited using two different types of high current arc evaporation. The first process used a magnetic particle filter to remove droplets from the plasma. For the second process, the samples were put into a metallic cage which was placed directly above the plasma source. For both processes, we varied the substrate temperature from 21 to 350 °C in order to investigate the temperature effect. The samples were characterized using SEM, AFM, XPS, Raman Spectroscopy, Ellipsometry, Photometry, and Nano Indentation in order to compare both methods of deposition and provide a careful characterization of such DLC films. We found that the sp3 content and the hardness can be precisely adjusted by changing the substrate temperature. Furthermore, in the case of unfiltered deposition, the optical constants can be shifted in the direction of higher absorbance in order to produce black and hard carbon coatings.}, language = {en} }