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Die Verstärkung von Spritzgussteilen mit Faserhalbzeugen gewinnt immer mehr an Bedeutung. Für die Einsatztauglichkeit derartiger Bauteile ist die Verbundhaftung zwischen den angespritzten Strukturen und den Faserhalbzeugen essentiell. Der Vortrag befasst sich mit den äußeren und prozesstechnischen Einflüssen zu Erhöhung der Verbundhaftung auf Faserhalbzeugen. Zudem wird ein Einblick in die Prüf und Anlagentechnik in diesem Bereich gegeben.
Multi-objective supplier portfolio configuration under supply risk and sustainability considerations
(2017)
Gallium Nitride (GaN) semiconductor devices are promised to be a good alternative to Silicon (Si) semiconductors in future motor inverters for variable frequency drives (VFDs). They combine low on state resistance and low switching losses with a high blocking voltage capability. Compared to actual inverters based on insulated gate bipolar transistors (IGBTs) the pulse width modulation (PWM) frequency for efficient operation can be increased by a factor of 5 to 10, extending the PWM frequency range up to 500 kHz. This allows the use of motor filters with small component size. As a result, high motor efficiency, low torque ripple, high control bandwidth and nearly ideal sinusoidal output voltages are achieved. Therefore this inverters can be used for high speed spindle motors and dynamic servo drives. This paper focus on the design of a hybrid sine wave filter consisting of an analog and a digital part. The filter is optimized to achieve low power loss and high current control bandwidth. A 3-phase GaN motor inverter operating at 200 kHz PWM frequency at 400 V DC-link voltage verifies the system design.
Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.